基于TMS320F2812的DSP无刷直流电机控制系统的研究及其仿真

本文以无刷直流电机(BLDCM)为研究对象,在无刷直流电机的数学模型的基础上,重点研究了无刷直流电机的控制系统及其仿真,并对其仿真结果进行了分析。在分析了无刷直流电机的数学模型后,提出以TMS320F2812的DSP为控制器的无刷直流电机控制设计的方案,并对此电机控制方案进行了软硬件设计,并且在MATLAB上通过Simulink进行了系统仿真。仿真结果表明,该控制系统运行平稳,具有较好的静态和动态特性。     

无刷直流电机检测系统的设计

介绍一种适合于无刷直流电机(Brushless DC Motor,BLDCM)电机的自动测试系统.该系统以TI公司生产的DSP控制器TMS320LF2407A为核心控制芯片,充分利用DSP丰富的内部外设模块,设计了一种无刷直流电机的检测实验平台.论述平台的软、硬件设计,该实验平台能满足对无刷直流电机的检测需要.     

基于DSP的无刷直流电机控制系统的研究与设计

在分析无刷直流电动机（BLDCM）的数学模型的基础上,以DSP芯片TMS320LF2407A为控制器,提出了一种无刷直流电机控制系统的设计方案。并针对该方案进行了电机控制系统的软硬件设计,最后在MATLAB上的Simulink进行了系统仿真。仿真结果表明,结合模糊控制算法对直流电机进行控制,其控制效果良好,适应性强。     

无刷直流电机调速系统模糊神经元PID控制

针对传统PID控制应用于无刷直流电机调速系统存在调节时间长、动态调节特性差及抗干扰能力弱等问题,提出一种基于模糊神经元PID控制的无刷直流电机调速系统设计方法。首先采用神经元控制、比例控制和模糊控制设计了一种可在线调整参数的模糊神经元PID控制器,然后再用其设计无刷直流电机调速系统的转速调节器。仿真结果表明,基于模糊神经元PID控制的无刷直流电机调速系统具有响应速度快、动态和静态调节性能好、自适应能力和抗干扰能力强等优点。     

一种电流反馈型三相无刷直流电机控制器

基于经典的闭环反馈控制理论和PWM理论在电机控制中的应用,设计了一种三相无刷直流电机控制器.该电路可实现对三相无刷直流电机的驱动和控制,具有功率电压高、驱动电流大、零点精确等优点,同时具有高边占空比100％可调和过流保护等功能,是一款真正的四象限扭矩电机控制器.     

基于单片机PID算法的无刷直流电机控制系统的研究

为了实现无刷直流电机的控制数字化和精确可控性,以及解决普通PID算法在无刷直流电机应用中出现的问题,分析了一种以单片机为核心的硬件控制系统方案。该控制系统由无刷直流电机I、R2130,IRF540等构成,以AT89C51为核心,控制算法采用变速积分PID算法。仿真结果证明成功解决了普通PID算法中的积分饱和现象,系统响应速度快,稳定性好,提高了无刷直流电机的可控性。     

基于79F9211单片机的无刷直流电机控制器设计

随着无刷直流电机的广泛使用,其控制器市场竞争愈发激烈,优良的性能和低成本之间的矛盾日益突出。硬件部分采用了较高性价比79F9211单片机为控制器,设计了IGBT驱动电路及其他辅助电路,完成了一种三相无刷直流电机控制系统。在双闭环调速环节,采用改进的积分分离PI算法,优化了电流采集的数字滤波算法,满足了无刷直流电机控制的动态和静态性能要求,降低了控制成本。最后通过实验验证了系统的可行性。     

基于DSP电动汽车无刷直流电机相位测试

根据无刷直流电机的工作原理,采用霍尔传感器作为位置传感器,TI公司的DSP芯片TMS320LF2406非常适合作为无刷直流电机(BLDC)的控制芯片,建立了无刷直流电机相位检测手段,转子位置检测模块的软件设计流程,简述电动汽车无刷直流电机控制系统的相位测试的硬件控制策略和软件设计方案。     

基于DSP的无刷直流电机控制器设计与实现

介绍了无刷直流电机的工作原理和控制方式,并提出了一种基于DSP技术无刷直流电机控制器设计方案,DSP将CPU、PWM波发生单元和数据采集单元等外设都集成在一片DSP上,提高了系统集成度和抗干扰性,并使得系统的升级更加容易。实验表明,基于DSP的无刷直流电机控制系统稳态和动态性能良好,达到了一般伺服系统的性能要求。     

MP16用于无刷直流电机的控制

介绍了一种专用微处理控制器MC68HC708MP16(简称MP16)在无刷直流电机控制中的应用。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.