TISPAN NGN RACS E4接口的研究

RACS是用于NGN中保证QoS的一个重要子系统。本文介绍了TISPAN标准组织定义的下一代网络的架构中RACS功能实体的位置，组成结构，和功能，另外对NASS功能实体的基本介绍，对RACS架构中的E4接口进行了研究，本架构主要是用于接入网的QoS保证，对核心网的QoS保证不做讨论。重点研究了E4接口的功能和所传递的信息模型。     

SPANRACS中Rq接口实现资源预留的研究

下一代网络TISPAN主要研究固网与移动网络融合,它提出的资源接纳控制子系统实现了接入控制、资源预留等功能。Rq接口是RACS中连接SPDF,A—RAC两个功能实体重要的接口。本文对RACS的整体架构、实体功能进行了描述;对Rq接口的功能、信息模型、具体的消息进行了研究;以IPTV具体业务为例,描述了Rq接口实现资源预留过程的具体消息流程。     

IMS网络中的QoS策略控制机制

以PCC为主体介绍策略控制的系统架构,PCC规则,PCC系统的相关实体功能;通过比较PCC与SBBC的异同,PCC与RACS的异同,阐述了未来QoS策略控制系统的发展趋势。     

NGN中资源接纳控制研究进展

下一代网业务控制和传送功能相分离后，为了保证业务的服务质量（QoS），引入了资源接纳控制的概念。通过实行资源接纳控制，资源接纳控制子系统（RACS）向上向业务层屏蔽传送网络的具体细节，支持业务控制与传送功能相分离；向下感知传送网络的资源使用情况，确保正确合理地使用传送网络资源，从而保证业务的服务质量（QoS），并防止带宽和业务盗用现象发生。功能架构、涉及的实体和参考点、接入类型和终端、资源控制模式、功能实体之间的选择机制、不同域之间的互联、和传送控制功能中其他功能之间的交互是资源接纳控制的核心内容。由于TISPANRACS和DITU—T资源接纳控制功能（RACF）的研究重点有差异，因此统一不同组织定义的架构将是各个组织今后研究的重点。     

IMS域引入QoS架构探讨

文章在对现有RACS、PCC架构进行分析的基础上,探讨了在IMS域引入基于策略的QoS架构,给出了固定/移动接入资源预留的信令流程,实现对固定、移动接入的QoS控制。     

IMS域引入基于策略的QoS控制研究

本文在对RACS架构及PCC架构分析的基础上,结合IMS网络部署情况,提出了在IMS域分阶段引入基于策略的QoS控制的方案,并给出了相关应用场景.     

WLAN和TD-SCDMA网络策略控制方案研究

文章在对RACS架构及PCC架构分析的基础上,结合WLAN和TD-SCDMA组网的实际情况,提出了不同场景下引入基于策略的QoS控制的方案,为网络的下一步部署提供了参考.     

一种PCC对CDMA2000 HRPD网络进行QoS策略控制的方案

3GPP与3GPP2针对各自主要的承载网络提出了不同的策略控制架构,分别是PCC与SBBC。由于两者QoS策略控制的基本原理相同,所以SBBC将和PCC一起完成其标准的研究和制定。本文总结并比较了PCC与SBBC的架构及实体接口功能;然后基于已提出的E-UTRAN与eHRPD互操作规范基础设计出一种PCC对CDMA2000 HRPD网络进行QoS策略控制的方案,建立QoS来实现承载资源的分配。     

一种FMC中的QoS技术演进方案

随着移动通信技术的迅速发展,可以降低运营成本并为用户提供完整、无缝、连续和一致业务体验的固定移动网络融合(FMC)技术成为各运营商、设备制造商、国际化标准组织的关注焦点。基于此,首先对LTE中PCC QoS保障架构和TISPAN的RACS架构进行了简要分析,总结3GPP PCC架构满足FMC与核心网共享的4点需求,提出一种符合融合要求的LTE核心网PCC与QoS架构方案,并通过举例验证方案的合理性与可实施性。     

IMS资源管理及演进策略

文章论述了资源控制对运营商业务转型的重要性,介绍了资源控制的技术背景,3GPP PCC、TISPAN、RACS、ITU—TRACF标准情况,资源控制系统的需求、功能架构、接口比较分析,以及资源控制系统的演进融合等,最后给出了运营商引入资源控制的步骤。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.