CT-RBAC:一种云计算环境下的访问控制模型

云计算的开放性、共享性等特点,使云计算环境下的访问控制比传统环境下的访问控制更加复杂.为了保证访问过程中云用户以及云服务器上数据的安全性和可靠性,提出了一种云计算环境下的访问控制模型(CTRBAC).划分了云服务器上数据和云用户的安全级别,引入了任务情景集,从5个角度来实现访问控制策略,最后给出了云用户访问云端数据的实现流程.分析结果表明CT-RBAC具有明显的优点.该方案提高了客体拥有者对云服务器的监控能力,保证了云环境下数据的安全性和可靠性,并且具有较好的灵活性.     

面向移动云计算的多要素代理重加密方案

云与移动计算的融合使用户能够更方便快捷地获取数据和服务,但是由于云平台和移动通信网络的开放性,如何在移动云计算环境下实现数据安全的访问和使用成为了亟待解决的问题。设计了一种基于多要素访问控制条件的代理重加密方案,包含系统模型、重加密算法及重加密密钥描述方法。基于该方案,云计算数据中心通过移动用户的访问请求,获取用户的客观访问控制条件,为用户生成相应的重加密密文,用户使用自身私钥即可对授权数据解密。在不增加用户密钥管理量的前提下,实现了移动云计算的多要素代理重加密。     

云计算环境下任务行为访问控制模型研究

近年来,云计算环境下访问控制机制成为研究热点。针对传统的访问控制模型不能满足云系统中的资源被非法用户恶意访问或处理的访问控制需求的问题,在传统访问控制基础上,通过对基于行为的访问控制(Action Based Access Control)模型的策略和授权机制的研究,基于ABAC模型中的优缺点,引入了用户信任度,给出了模型的形式化定义和信任相似度的算法,设计了基于信任相似度的权限授予机制,提出基于任务行为的访问控制模型(Task-action Based Access Control,TABAC)。安全及性能分析表明,该方案使访问控制灵活可靠,适用范围更广泛。     

云计算环境中支持隐私保护的数字版权保护方案简

针对云计算环境中数字内容安全和用户隐私保护的需求,提出了一种云计算环境中支持隐私保护的数字版权保护方案。设计了云计算环境中数字内容版权全生命周期保护和用户隐私保护的框架,包括系统初始化、内容加密、许可授权和内容解密4个主要协议;采用基于属性基加密和加法同态加密算法的内容加密密钥保护和分发机制,保证内容加密密钥的安全性;允许用户匿名向云服务提供商订购内容和申请授权,保护用户的隐私,并且防止云服务提供商、授权服务器和密钥服务器等收集用户使用习惯等敏感信息。与现有的云计算环境中数字版权保护方案相比,该方案在保护内容安全和用户隐私的同时,支持灵活的访问控制,并且支持在线和超级分发应用模式,在云计算环境中具有较好的实用性。     

云计算中一种紧凑型的外包访问控制方案

密文策略的属性加密是实现云平台上安全的访问控制方案的最佳选择。然而,在大多数密文策略的属性加密方案中,用户密钥长度与属性的个数之间成线性关系;用户的解密时间与访问结构的复杂度成正比关系。为了减少用户密钥的存储和解密计算开销,本文提出一种面向云计算平台的紧凑型的外包访问控制方案。方案中的访问结构可以支持“与”、“或”以及“门限”三种策略。它仅采用简单的哈希和异或运算就可以验证用户外包解密返回的数据是否正确。在随机预言机模型中,基于aMSE-DDH难题,证明了方案是选择密文攻击安全的。分析表明,本文方案能够安全的实现云计算环境下的访问控制,尤其当用户终端设备受限时实现的访问控制。      

云计算环境中基于用户访问需求的角色查找算法

提出了一种云计算环境中基于角色的访问控制模型CARBAC,将角色分为用户角色和资源拥有者管理角色。针对管理角色对用户访问的角色指派,提出了在混杂角色层次关系中基于用户权限的角色查找算法。对于一组给定的授权,该算法能在云计算系统的角色中选择一组数量最少的角色指派给用户。仿真实验表明,针对云计算环境中的海量用户访问,本算法能显著减少系统中角色的数量,缩短用户授权时间,提高系统运行效率。     

一种面向云计算环境的安全管理模型

在云计算中,对大规模的资源提供一种安全有效的访问是其一个很重要的组成部分。在传统的分布式访问控制模型中．服务请求者将主体属性或能力等披露给提供资源者．访问控制决策完全取决于以资源请求者能力和安全策略为输入的一致性证明。但是。这些主体属性与能力等通常携带了大量信息。势必给云环境中的互操作带来许多安全隐患和风险。针对云环境的特点,提出一种针对云环境资源的安全模型,采用一种基于属性的访问控制技术来解决云计算环境下复杂和困难的安全问题,并且提出了一个安全管理模型来动态的决定对资源的访问控制．通过对资源属性的动态改变来达到对资源的安全访问的目的。     

属性加密访问控制方法在云环境下的应用研究

随着云计算技术的普遍应用,云环境下云资源的安全性问题也受到了信息安全技术领域研究人员的普遍关注.传统的访问控制方法不能适应云计算环境下的数据存储和处理的安全需要,属性加密访问控制方法在云计算环境下的应用,可以有效的保证云环境下数据的安全性.本文对云安全进行了简单的分析,对基于属性的访问控制方法进行了研究,结合云计算环境数据处理的实际情况,提出了基于属性加密访问控制方法在云计算环境下应用的方案,并进行了研究.     

大数据环境下云数据的访问控制技术研究

传统的数据访问控制技术相对完善,基本可以达到保护数据资源不被非法访问的目的,可是随着计算机和网络技术的发展,云计算时代到来,数据的计算模式和存储模式都发生了翻天覆地的变化。有效地将数据访问控制技术应用到大数据环境下的云数据安全维护是如今云计算发展的重要项目。面对这个挑战,着重从访问控制模型、ABE密码机制和多用户访问控制等方面对大数据环境下云数据的访问控制进行研究。     

CP-ABE及云计算技术下的数据访问控制实现策略

随着计算机技术的快速发展,数据安全和访问控制成为云计算研究的重要问题。已有的解决方案采用披露加密数据的方法,但这些方法为数据拥有者带来大量的计算开销,也面临设计用户吊销机制的问题。因此,使用CP-ABE安全机制解决数据拥有者计算开销大、在线时间长等问题,从而为云数据管理员提供相应的加密访问控制策略,有助于未来云管理从建设向使用交付过程。借助CP-ABE-R吊销机制能有效解决用户吊销问题,有效解决其他有关机制在云计算环境下重新加密复杂和计算量大的问题。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.