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聚合物共面波导行波电极电光调制器 总被引:1,自引:1,他引:1
用聚合物材料BPAN-NT设计并初步成功制作了共面波导(CPW)行波电极电光调制器。用反应离子刻蚀(RIE)的方法制作脊波导,通过电晕极化使芯层有电光效应,利用电镀方法制作厚行波电极。对调制器的各项特性参数进行了测试,测得调制器的微波损耗系数0α=0.9 dB/cm.(GHz)1/2、在1.317μm波长上Vπ=250 V,由此算得芯层材料的电光系数3γ3=3.7 pm/V,同时测得消光比为13.49dB、插入损耗为18.6 dB,在8 GHz的微波频率上观察到了调制光信号,理论计算3 dB光调制带宽为43.77 GHz。 相似文献
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设计了一种应用于毫米波波段的串联接触式RF MEMS开关。为了在毫米波波段获得较高的隔离度,通过使用短截线结构,以降低输入输出端口的耦合电容。为了获得可靠的金属接触,设计了一种改进型的"蟹形"桥结构。测试结果显示,在30GHz,插入损耗为-0.3dB,隔离度为-20dB。在DC~40GHz的频率范围内,插入损耗优于-0.5dB,隔离度优于-20dB。所设计的串联接触式RF MEMS开关,可应用于20~40GHz的频率范围内。 相似文献
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设计了一种应用于毫米波波段的串联接触式RF MEMS开关.为了在毫米波波段获得较高的隔离度,通过使用短截线结构,以降低输入输出端口的耦合电容.为了获得可靠的金属接触,设计了一种改进型的“蟹形”桥结构.测试结果显示,在30 GHz,插入损耗为-0.3dB,隔离度为-20 dB.在DC~40 GHz的频率范围内,插入损耗优于-0.5 dB,隔离度优于-20 dB.所设计的串联接触式RF MEMS开关,可应用于20~40 GHz的频率范围内. 相似文献
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提出一种S/X双波段双极化共口径天线阵的新设计,以紧凑的三层结构实现了1:3的频率比.X波段采用双层贴片,并在下层贴片上开缝以提高其极化端口间的隔离度.S波段采用缝隙,刻蚀在X波段贴片的地板上,从而减少了阵列层数,简化了天线结构.仿真结果验证了本设计的有效性.X波段的相对阻抗带宽(S11≤-10dB)达15.5%(中心频率为9.6GHz),频带内隔离度大于25dB的带宽为1.2GHz,隔离度最大值达40dB.S波段为单层结构,相对阻抗带宽为5.5%(中心频率为3.3GHz).频带内隔离度优于27dB.试验阵列双波段交叉极化电平均低于-30dB. 相似文献
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低半波电压电光调制器是实现大规模光电集成的关键。文章提出了一种半波电压低于1.5 V的薄膜铌酸锂马赫-曾德尔(Mach-Zehnder, MZ)电光调制器,选用绝缘体上单晶薄膜铌酸锂材料作为设计基础,分析了直波导、多模干涉耦合器、弯曲波导和调制臂等结构对电光调制器的影响。结果表明,当调制臂长为3 mm时,该薄膜铌酸锂电光调制器具有1.05 V的低半波电压、0.319 dB的低损耗和27 dB的高消光比。同时,该调制器半波电压长度积为0.315 V·cm,调制效率高,具有与CMOS技术兼容的半波电压,有利于大规模光电集成。 相似文献
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高速电光调制器是宽带光通信网络和微波光子系统中的关键元器件之一。相对于体材料铌酸锂而言,薄膜铌酸锂材料由于其较强的光场限制能力,在构建小尺寸、宽带、低半波电压的高性能电光调制芯片上有独特的优势。文章基于薄膜铌酸锂材料研制了一种3 dB带宽不低于50 GHz的电光调制芯片,并采用光纤与波导水平端面耦合的光学封装方案和基于1.85 mm同轴接头的射频封装方案,实现了全封装的薄膜铌酸锂电光调制器。测量结果表明,封装后器件的光学插入损耗小于等于5 dB,3 dB带宽大于等于40 GHz,射频半波电压小于等于3 V@1 GHz。 相似文献
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Hong-Yeh Chang Cheng-Kuo Lin Yu-Chi Wang 《Microwave and Wireless Components Letters, IEEE》2007,17(11):805-807
A 30-130 GHz ultra broadband direct-conversion binary phase shift keying (BPSK) modulator using a 0.5-mum enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT) process is presented in this letter. The BPSK modulator was designed using a modified reflection-type topology with E-mode PHEMT devices. An advantage for the E-mode PHEMT process is positive gate bias, and therefore the bias circuit for the modulation would be less complicated. Moreover, the BPSK modulator demonstrates an error vector magnitude of within 5.5%, an adjacent channel power ratio of better than -35 dBc, and an on-off isolation of greater than 20 dB from 30 to 130 GHz. The chip size of the BPSK modulator is only 0.8x0.7 mm2. To the best of the authors' knowledge, this work is the highest operation frequency with the widest bandwidth among all the reported monolithic microwave integrated circuit-based BPSK modulators. 相似文献
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Gopalakrishnan G.K. Bulmer C.H. Burns W.K. McElhanon R.W. Greenblatt A.S. 《Electronics letters》1992,28(9):826-827
A 5 V half-wave voltage (V/sub pi /) electro-optic Ti:LiNbO/sub 3/ intensity modulator with a -7.5 dB (electrical) optical response at 40 GHz is demonstrated at 1.3 mu m. A thick electrode structure is used in conjunction with a thin substrate to achieve a near optical-microwave phase match and a broadband electrical response.<> 相似文献
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硅基光子集成平台因其高集成度、CMOS工艺兼容性等特点在光通信领域受到了广泛的关注,而电光调制器作为光通信系统中最为重要的器件之一,承担着将电信号加载至光信号上的关键作用,为打破硅基调制器的性能限制,可利用硅和铌酸锂的大面积键合技术以及铌酸锂低损耗波导刻蚀技术实现高性能硅和铌酸锂异质集成薄膜电光调制器,目前该类调制器的性能可达半波电压3 V,3 dB电光带宽超过70 GHz,插入损耗小于1.8 dB, 消光比大于40 dB。文中对比了硅和铌酸锂异质集成调制器的研究现状并介绍了该异质集成薄膜调制器的结构设计与工艺实现方法。 相似文献
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A wideband, low drive voltage LiNbO3 electro-optic modulator is demonstrated utilising electrodes patterned according to a 13-bit Barker sequence. It exhibits a 3·5 dB optical insertion loss and a 7·5 V switching voltage. The modulation frequency response remains ⩾-5 dB (optical) to beyond 40 GHz 相似文献
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为了实现倍频器多谐波输出,满足系统多频率需求,同时减少成本,增加系统集成度,引入了改进紧凑型悬置微带谐振单元(Compact Suspended Microstrip Resonators(CSMRs))滤波器,主要研究并实现了170 GHz和340 GHz双频段分别输出。仿真中分别设计170 GHz和340 GHz探针,引入CSMRs低通滤波器增加170 GHz对高频段的隔离,减小波导高度,提高WR.2.8波导截止频率,增加对300 GHz以下频段抑制,为了测试其输出特性和网络损耗,设计170~340 GHz背靠背模块。仿真结果为低通CSMRs滤波器满足在20~180 GHz通带内反射系数小于-18 dB,在266~520 GHz阻带内抑制度大于20 dB,背靠背结构仿真170 GHz与340 GHz频段反射系数均小于-15 dB,端口隔离大于30 dB,表现出良好的选频特性。测试结果表明:在170 GHz端口通带为150~185 GHz,反射系数小于-10 dB,损耗大于1.2 dB;在340 GHz端口,通带为306~355 GHz,反射系数小于-10 dB,损耗2 dB,两端口隔离度大于10 dB,最好60 dB。 相似文献
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K. Kawano T. Kitoh O. Mitomi T. Nozawa H. Jumonji 《Photonics Technology Letters, IEEE》1989,1(2):33-34
A wide-band and low-driving-power Ti:LiNbO/sub 3/ optical modulator at 1.5- mu m wavelength is described. A relatively thick SiO/sub 2/ buffer layer is effectively utilized to improve phase velocity mismatch between the microwaves and optical waves. A coplanar waveguide is used as an efficient traveling-wave electrode, and is designed utilizing the upper bound calculation in the spectral domain. Wide-band modulation of 12 GHz (3 dB optical and 6 dB electrical cutoff frequency) and small driving-power-to-modulation-bandwidth ratio of 20 mW/GHz are realized.<> 相似文献
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Daryoush A.S. Ackerman E. Samant N.R. Wanuga S. Kasemset D. 《Microwave Theory and Techniques》1991,39(12):2031-2044
An analysis of directly and externally modulated fiber-optic links is presented. The theoretical analysis is based on the signal flow diagram of the interface circuits to the laser diode, Mach-Zehnder electro-optic modulator, and p-i-n photodiode. System parameters such as gain, noise figure, two-tone intermodulation distortion, and spurious free and compression dynamic range are expressed as a function of frequency and operating point of the laser and external modulator. Two directly and externally modulated fiber-optic links were designed and fabricated to verify the analytical models. The direct modulation FO link was developed at the Ku -band (11.6-12.4 GHz), whereas the external modulation link was at L -band (875-925 MHz). Spurious-free dynamic ranges of 95.8 dB Hz2/3 and 113 dB Hz 2/3, respectively, were achieved. The predictions based on the analytical models match the measured results 相似文献