C 波段小型化高精度驱动延时组件的研制

介绍了延时线在雷达中的工作原理,分析了延迟时间误差与延迟幅度误差对信号合成的影响。针对驱动延时组件小型化、高精度设计的难点进行了评估,并提出采用微波多层印制电路实现小型化、采用新型调相电路与衰减电路解决延时高精度的设计方案。在此基础上,设计并实现了一种集成延时、放大与功率分配/合成功能的驱动延时组件。根据驱动延时组件各态收发指标测试结果,幅度带内平坦度优于±0.4 d B,延时相位精度≤±5°,延时幅度精度≤±0.5 d B。     

基于微印多层技术的小型化功分网络设计

论述了基于微波多层印刷技术的小型化功分网络设计。微波多层印刷技术是一种较新的工艺技术,该技术能兼顾微波电路性能和小型化设计。本文以一分八小型化功分网络设计为例,介绍其仿真设计方法,并给出实测结果。该功分网络在4层微波板基础上,设计实现一分八功分器,在大大缩小电路体积基础上,获得良好的微波性能。     

毫米波多功能和差网络设计

设计了一种高集成多功能有源和差网络。该和差网络工作在Ka频段,内部集成了无源和差器、功分器、有源收发组件、开关矩阵、控制电路等多个功能单元,采用小型化、高集成设计方法,大大减少了整个系统的质量和体积。实验结果表明,在中心频点3 GHz带宽内,该和差网络实现了良好的端口匹配,小型化的设计没有影响射频性能。     

小型化滤波放大器三维集成设计

针对滤波放大器中滤波器体积大、数量多的特点，提出了一种基于三维集成技术的小型化设计方法。该方法利用球栅阵列连接，实现多个基板的三维集成互联组装。将放大电路置于下层基板，滤波器置于中间层基板，上层基板作为滤波器的屏蔽层，通过焊球实现信号互通和电磁屏蔽隔离。该设计可缩小多个滤波器级联时电路布局尺寸，为实现高集成、小型化、多功能的滤波放大器产品提供了有效的解决方案。     

基于叠层SIW滤波器的高集成硅基毫米波收发前端

提出了一种基于硅基晶圆级封装技术的小型化Ka频段收发前端,实现了接收通道、发射通道与本振产生电路的一体集成。该收发前端采用嵌入叠层型基片集成波导(SIW)滤波器结构实现高选择性预选滤波与低损耗垂直互连过渡的一体化设计。测试结果表明,该Ka频段滤波器中心损耗1 dB,1 dB带宽4.02 GHz,中心频偏5 GHz处抑制度优于35 dB,仿真与测试结果吻合良好。在前端模组设计中,通过采用硅基微腔屏蔽实现紧凑尺寸下各功能单元的隔离,通过采用1/4波长短路传输线结构抑制电源、控制等低频信号对接收中频的干扰,最终实现了该毫米波收发前端的小型化集成,其尺寸仅为20 mm×20 mm×1.25 mm,主要电性能满足设计要求。     

一种X波段小型化上下变频组件的研制

为了研制一种x波段小型化上下变频组件,通过方案优化、关键指标分析与计算、器材选择、关键部件（滤波器）的小型化实现等方法进行设计,并采用微波混合集成工艺进行电路布局;实测结果表明,组件指标符合性较好、满足系统要求;具有体积小、集成度高、功耗小、收发隔离度高、杂散抑制好的特点,对于研制该类型的上下变频组件具有一定的参考价值。     

一种应用收发一体功分器设计收发馈电网络的方法

为了实现高密度的天线集成,通常会将多个天线单元紧密排列,因此需要设计连接各个单元的收发馈电网络。应用收发一体功分器级联成收发馈电网络,收发一体功分器在设计时就采用多层结构,并考虑网络层叠的影响,可以确保发射和接收互不干扰。此外,采用通孔结构,并将电阻置于底部可以降低加工难度和成本。应用该方法设计了一种收发一体双8路的馈电网络,在工作频带内,测试的反射系数小于-22 dB,隔离度高于61 dB,各个通道间的幅度一致性小于0.2 dB,相位一致性小于2.3°。该方法可缩短设计周期,提高研发效率,而且设计的馈电网络具有高隔离和低成本等优点,可用于平板阵列天线中。     

一种UHF频段无线数据传输系统接入点的射频前端

介绍了UHF(特高频)频段无线数据传输系统中接入点的一种射频前端。该前端包括调制器、上变频器、功率放大器、低噪声放大器、下变频器、解调器、频率合成器、增益控制和收发切换开关等电路。介绍了射频前端的实现方案以及关键部件的设计与测试。制作完成的射频前端集成在一块1 5 0mm×1 0 0mm的4层印制电路版上。该前端最大输出功率可达2W,接收灵敏度优于-100 dBm,收发切换时延小于1.5μs,满足系统指标要求。     

X波段氮化镓小型化T/R组件的设计与实现

针对高功率T/R组件的小型化问题,提出了一种X波段氮化镓(Ga N)小型化T/R组件的设计与实现方法。在小型化尺寸内实现了4个收发通道,内部包含了318个元器件。对组件复杂功能及由此带来的工艺装配问题和热问题进行了阐述与分析。研制出了采用多功能芯片技术、多层复合基板技术和多芯片组装(MCM)技术的组件,内部高度集成,实现了小型化。测试结果表明,组件尺寸为65 mm×60 mm×8.5 mm,发射输出功率≥30 W,实现了小型化和良好的电气性能。     

基于自振混频的下变频接收电路设计

文中设计了一种基于自振混频(SOM)电路的小型化、低成本下变频接收电路。自振混频电路是基于 辅助源电路进行仿真分析与设计,以单器件场效应管(FET)实现了变频接收电路中变频与本振两种功能的电路。设 计中还将不同种类的功能电路通过垂直压叠的方式实现层间互联,进一步提高了系统集成度。文中提出了基于自 振混频的功能电路集成和基于分离器件层间填埋的结构集成相结合的设计方法,最终在58 mm×20 mm×2. 9 mm 的 空间内实现了融天线为一体的小型化、低成本、低功耗的下变频接收通道,变频增益-4~-8 dB,整体功耗<0. 13 W。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.