一种新颖可控陷波特性的超宽带天线

设计了一种具有可控陷波特性的超宽带天线,有效抑制了超宽带通信系统与窄带通信系统之间潜在的干扰。该天线的尺寸仅为3.5 cm×3.5 cm×0.1 cm,使用微带线进行馈电,并通过在天线单元上加载支节,从而实现天线可控陷波特性。利用仿真软件HFSS对天线进行计算,对天线的阻抗、方向图特性进行仿真对比。仿真结果表明,天线在超宽带系统3.1 GHz~25 GHz工作频段内的电压驻波比（VSWR）小于2,在5.2 GHz~5.8 GHz频率范围内的滤波特性较好,有效降低了无线局域网系统对超宽带系统的影响,在工作频段内该天线的辐射方向特性和方向图特性都较为理想。     

共面波导馈电的带阻UWB天线设计

提出了共面波导(CPW)馈电平面圆形单极子带阻超宽带(UWB)天线的设计方法,采用该方法设计的天线满足超宽带无线通信所要求的3.1 GHz~10.6 GHz的频带范围,通过在圆形贴片上添加U形和弧形缝隙,可分别实现4.75 GHz~5.96GHz范围内和4.8 GHz~6.2 GHz范围内电压驻波比VSWR≥2的带阻特性,均避免了5 GHz无线局域网的干扰。采用电磁仿真软件CST进行了天线的方向图绘制,仿真结果表明该设计可行。     

一种应用于RFID 的印刷倒F 天线设计

基于平面倒F 天线模型,设计了一种用于2.4GHz RFID 系统的印刷倒F 单极子天线。采用易于射频集成的微带馈电方式,并结合带线阻抗变换,以实现较宽的阻抗带宽;采用在印刷倒F 结构正上方加载寄生辐射贴片,以提高天线增益。利用高频电磁仿真软件Ansoft HFSS 对提出的天线进行了建模、仿真和优化设计,该天线在2.28-2.51GHz 频率 范围内VSWR＜2,达到了10%左右的阻抗带宽,特别在RFID 系统的工作频段内（2.401GHz~2.409GHz）VSWR＜1.35, 增益＞2.36dBi。该天线具有尺寸小,重量轻,成本低等众多优点,能应用于工作于2.4GHz 的各种RFID 系统中。     

一种新型的具有带阻特性的超宽带天线

设计制作了一种新型的具有带阻特性的超宽带微带天线。采用在六边形辐射贴片上开一对称的U形槽,实现了天线的带阻特性。仿真结果表明,可以方便地通过改变U形槽的宽度来改变阻带的位置和宽度。可实现天线频带宽度(S11≤-10 dB)为3.015 GHz~13.270 GHz,相对带宽达126%,并能精确阻隔WLAN(5.725 GHz~5.85 GHz)频率段,实验结果表明该天线适用于超宽带系统的应用。     

应用于WLAN/WiMAX的双6型对称三频单极子天线

设计了一款适应于无线局域网络(WLAN)和全球微波互联接入(WiMAX)的由微带线馈电的平面印刷三频单极子天线。天线的正面呈对称双6形状,提供低频辐射和较宽带宽的高频辐射。为了满足三频设计激励起WiMAX所需的中间频段,在天线背面的接地板上开对称槽线。利用有限元法的电磁仿真软件Ansoft HFSS 15.0进行仿真设计,优化结构数据并得到天线的最终辐射特性结果。结果表明,天线在回波损耗小于-10 dB的工作频带分别是2.39~2.72 GHz,3.36~3.86 GHz和4.22~5.83 GHz,很好地实现了在WLAN和WiMAX的工作频带。同时天线尺寸小、结构简单、共面性好、容易实现,而且天线在各个工作频段具有良好的方向性和增益。     

一种新颖的宽频带双极化基站单元天线研究

提出了一种新颖的宽频带双极化方形偶极子基站天线单元,该天线单元由圆柱形支撑座、方形偶极子单元、改进的双倒L型馈电线以及反射板组成。仿真和测试结果显示,在1.69 GHz~3.16 GHz 频段内,两个端口处的电压驻波比(VSWR)均小于1.5,其中,在所需要的工作频段1.71 GHz~2.69 GHz 内,两端口的VSWR均小于1.4,隔离度小于-30 dB,交叉极化比均小于-29 dB,最大增益为10.6 dB,在整个宽频带内具有较为稳定的方向图和增益。同时,该天线经过改进后重量轻,馈线可调性好,安装简单易实现。     

一种新型超宽带天线的设计

Sinuous天线是一种用途广泛的宽频带双极化天线。文中论述了Sinuous天线的工作原理,介绍了其主要特点以及Sinuous天线的设计方法,并给出了一个2GHz~18GHz Sinuous天线的仿真设计,仿真结果表明该天线在9∶1的带宽内具有较好的电性能。     

具有双陷波特性的超宽带平面天线设计

设计了一种带有2个陷波频段的超宽带天线。天线的缝隙和馈电枝节采用相反的梯形结构,以实现较好的阻抗匹配。通过在宽缝隙中增加2个线形枝节和1个"E"形结构,使得天线在3.0 GHz~3.9 GHz和5 GHz~6 GHz 2个频段内出现频率阻断。根据天线的阻抗曲线,给出等效谐振电路并对陷波产生的原理进行了分析。最后对天线的远场辐射特性进行分析和阐述,测试结果良好,达到了陷波超宽带天线频率阻断的效果。     

一种新型小型化三频微带天线的设计

设计了一种可用于无线局域网/无线城域网(WLAN/WiMax)频段的小型化三频微带天线。该结构形似太极鱼,在鱼眼附近同轴馈电,并利用贴片上的一条矩形缝隙,既可实现阻抗匹配,又可使天线在贴片外边界3个位置产生谐振,进而实现在3个频段内同时工作。通过电磁仿真软件HFSS对天线进行仿真,结果表明,该天线在中心频点为2.45GHz,3.95GHz和5.25GHz处的回波损耗分别为29.7dB,29.2dB和27.4dB,天线性能良好。同时天线整体尺寸只有0.24λ×0.18λ(λ为频点2.45GHz时的自由空间波长),具有小型化的特点。该天线尺寸小且结构简单,具有良好的应用价值。其中2.45GHz和5.25GHz可用于WLAN频段,3.9GHz可用于WiMax频段。     

一种新型UWB平面单极子微带天线阵的设计

提出了一种新型平面单极子微带天线阵,以平面矩形单极子天线为原型,通过改变辐射贴片的形状实现对原有天线性能的优化。设计了中心频率为2.4 GHz,相对带宽是42%,增益达13 dBi的宽频带四单元平面单极天线阵。通过仿真与实验表明,该天线在1.93 GHz~2.93 GHz频带内反射系数均小于-10 dB。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.