大口径凸非球面反射镜子孔径拼接检测

为了获得大口径凸非球面反射镜全口径的面形,提出了利用子孔径拼接检测大口径凸非球面的新方法。利用干涉仪标准球面波前依次干涉测定大口径镜面上各个区域的相位分布,通过子孔径拼接算法即可求解得到镜面全口径面形信息。对该方法的基本原理和实现步骤进行了分析和研究,建立了大口径拼接检测算法的数学模型,设计并研制了大口径反射镜拼接检验装置。结合实例对一口径为260 mm 的碳化硅凸非球面反射镜进行了9 个子孔径的拼接干涉测量,并将拼接检测结果与全口径面形测量结果进行对比,两种方法测量面形PV 值和RMS 值的偏差分别为0.043和0.021（=632.8 nm）。     

子孔径拼接检测光学平面反射镜技术

干涉检测作为高精度光学面形加工的基础,其检测精度决定了加工精度。为了解决大口径光学平面反射镜检测问题,基于子孔径拼接算法,提出了一种拼接因子用于重叠区域取值,同时利用 100mm口径干涉仪对120mm口径平面反射镜完成拼接检验,并将拼接检测结果与利用150mm 口径干涉仪直接检测结果进行了对比分析,实验结果表明,拼接结果无拼痕,拼接检测结果与全口径测量结果PV 与RMS 的相对偏差分别为7.25%与7.14%,检测面形是一致的,由此验证了拼接检测的可靠性和准确性。     

大口径标准球面镜组研制与应用

为了实现大口径凸面反射镜检测,研究了大口径标准镜组的设计与研制技术。针对口径Φ为350mm、焦距为4400mm的标准球面镜组,完成了标准镜头设计分析、面形和曲率半径误差标定以及系统集成与实验验证。光学设计软件模拟分析结果表明镜头设计波像差达到0.0001λ[峰谷值(PV),λ=632.8nm],该标准镜头参考球面标准镜面形加工精度达到0.088λ(PV,λ=632.8nm)、0.006λ[均方根(RMS),λ=632.8nm],某项目Φ为320mm、R为4092mm的碳化硅凸面反射镜最终加工检测结果达到0.102λ(PV,λ=632.8nm)、0.011λ(RMS,λ=632.8nm)。结果表明采用该大口径标准球面波透镜组为大口径长曲率半径凸面反射镜提供了一种高精度检测的手段,解决了大口径长曲率半径凸面反射镜检测难题,采用该标准球面镜结合基于数字样板的非零位检测方法也可完成浅度非球面或自由曲面面形实时高精度检测。     

中小型圆形反射镜检测支撑优化

为了优化中小型圆形反射镜在加工、镀膜、装调等阶段的检测中所需的支撑结构,以V型块支撑工作原理设计了支撑位置及支撑点夹角均可调整的分体式支撑。利用有限元方法得到TMA系统中Φ136 mm非球面次镜面形随支撑点夹角的变化趋势,并根据趋势曲线,确定支撑点夹角为100°状态下,分体式支撑结构引起的镜面面形变化最小(RMS=0.57nm)。利用干涉仪结合补偿器的检测方式,对分体式支撑在不同的支撑点夹角下的镜面面形进行检测。所得结果与有限元方法得到的镜面面形随支撑点夹角变化趋势与试验结果相符,且在100°时分体式支撑引起的镜面面形变化(RMS=0.015 wave)明显优于其他角度。再以不同的镜坯材料及反射镜直径尺寸进行仿真对比,结果表明:镜面面形随支撑点夹角的变化趋势与反射镜材料和尺寸无关,趋势曲线幅值随材料弹性模量和反射镜直径改变而变化。优化得到的分体式支撑对于中小型圆反射镜具有广泛适用性。     

极轴式望远镜主镜支撑结构对镜面变形的影响

根据极轴式望远镜的工作特点,以口径为700 mm的极轴式望远镜主镜室系统为例,确定了一套主镜支撑方案。借助于有限元分析软件MSC.Patran详细地建立了系统的有限元模型,选取多种工况,分析了系统在自重作用下的镜面变形情况,绘制了镜面变形误差PV值和RMS值的变化曲线。结果表明:镜面变形主要受角的影响,随着的增大而减小,径向支撑效果优于轴向支撑效果,镜面变形误差满足设计指标要求。在主镜室系统竖直放置时,利用Zygo干涉仪测得带支撑结构的镜面变形误差RMS值为28.48 nm,表明主镜在该支撑结构作用下的面形接近于加工检测时的状态,同时也验证了有限元模型的准确性。     

空间遥感器Ф2 m量级大口径SiC反射镜镜坯结构设计

空间遥感器的大口径反射镜的设计目标是高比刚度。为限制发射成本,尽可能降低镜体质量;为保证反射镜的功能需求,尽可能提高镜体自身的刚度,随着反射镜口径的增大,反射镜的轻量化设计更加重要。针对某Ф2 m口径天基大口径反射镜镜体的轻量化设计,采用了传统经验设计、拓扑优化设计和尺寸参数优化设计相结合的综合优化设计方法,相对大口径反射镜镜体的传统轻量化设计方法,这种综合优化设计方法可使设计结果快速收敛,获得最优化的设计结构。采用综合优化设计方法完成镜体的优化设计后,Ф2 m口径天基大口径反射镜镜体的质量为326 kg,镜体轻量化率高达82.5%,单镜在光轴竖直状态,在1 g重力载荷作用下,取决于镜体刚度的评价镜体成像质量的镜面面形精度RMS值的变化量优于4.9 nm,单镜在光轴水平状态,在1 g重力载荷作用下,镜面面形精度RMS值的变化量优于4.3 nm。结果表明,镜体质量优于设计要求的340 kg;镜面面形精度RMS值变化量优于设计要求的5 nm,满足了镜体要求的高比刚度要求。     

利用三坐标测量仪拼接检测大口径非球面面形

为了利用三坐标测量仪实现对大口径非球面面形的检测,提出了大口径非球面面形三坐标拼接测试方法。对该方法的基本原理与具体的实现流程进行了分析和研究,并基于初级像差理论和最小二乘拟合建立了三坐标拼接检验大口径非球面综合优化数学模型。结合实例,对一口径为1 200 mm434 mm的长条形SiC离轴非球面反射镜进行了两个子孔径的三坐标拼接检测,并将拼接测试结果与非球面全口径轮廓检测结果进行了比对,其PV值和RMS值的偏差分别仅为0.073 m和0.042 m;两种方法面形残差的PV值和RMS值分别为0.325 m和0.055 m。     

空间遥感相机大口径反射镜结构优化设计

为满足大口径反射镜在复杂空间环境下对高面形精度和热稳定性的要求,针对某Φ660 mm口径反射镜进行了轻量化研究。提出了一种采用经典理论公式创建反射镜初始结构,结合灵敏度分析和参数优化进行综合设计的方法。首先构建了反射镜参数化模型,采用灵敏度分析研究镜体结构参数对面形变化的影响规律,找到对镜面面形RMS值灵敏度高的结构参数进行优化迭代。相比于传统反射镜结构设计方法,此方法缩小了优化设计空间,节约了计算成本与时间,能够在设计空间内全局寻优,较快收敛于最优值。优化后反射镜在自重载荷工况下镜面面形PV值小于λ/10,RMS值小于λ/40(λ=632.8 nm),镜体质量为13.6 kg,轻量化率达78.4%。镜体组件一阶频率为121 Hz,满足反射镜动态刚度要求,根据优化后的结果建立了反射镜的最佳结构模型,并进行了投产制造。     

夏克哈特曼扫描拼接检测平面镜(特邀)

随着先进光学系统设计与制造的发展,大口径光学系统得到了广泛的应用。然而,大口径平面镜高精度面形的检测手段不足,限制了大口径平面镜的制造与应用。为实现大口径平面反射镜的高精度面形检测,提出一种夏克哈特曼扫描拼接检测平面镜面形的方法。对扫描拼接原理、波前重构算法进行了研究,建立了微透镜阵列成像的数学模型,验证了夏克哈特曼扫描拼接检测原理的可行性。针对一口径为150 mm的平面镜进行了扫描拼接检测实验,拼接得到的全口径面形为0.019λ RMS(λ=635 nm);与干涉检测结果对比,检测精度为0.008λ RMS,结果表明该方法能够实现大口径平面反射镜的高精度检测。     

多电极静电拉伸薄膜反射镜的面形优化

为了提高多电极静电拉伸薄膜反射镜的面形精度,基于Henky-Campbell圆薄膜平衡方程分析了薄膜均布载荷作用下的拉伸成形和面形误差。采用ANSYS软件一阶优化法,建立了以薄膜屈服强度为状态变量,镜面3个同心环形区域上施加的载荷为设计变量,以反射镜面形与理想面形的最小均方根误差(RMS)为目标的优化模型,对口径300 mm、中心挠度分别为0.5、1.0和1.5 mm的薄膜反射镜面形进行了优化。实验中优化后的最佳镜面面形RMS为7.73μm,PV值为50.69μm,较优化前分别减少了30.2%和23.7%。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.