浅议自动调节阀的选型及维护

介绍了目前常用自动调节阀的类型及各类型的适用范围、优缺点,重点介绍了自动调节阀的选型原则及口径计算公式,根据多年的实际工作经验对自动调节阀的维护提出了几点注意事项。     

基于光宽带端到端智慧运营的光终端全自动开通方法

目前光宽带端到端运营过程中PON光终端录入LOID配置采用人工或者半人工的方式实现,尚无方法和系统真正实现光终端全自动开通.要实现自动开通要求包括业务自动开通局内施工自动化、终端实现即插即用,满足运营维护一体化、终端市场化的需求.提出PON光终端全自动开通的方法和系统,可以有效解决上述“临门一脚”问题,提升光网络端到端智慧运营能力,减少资源浪费,提升用户感知.     

动态DNS的原理和实现及其在移动分组域网络中的应用

随着数据业务突飞猛进地发展,如何提高＂保持业务连续性＂和＂业务快速有效迁移＂的能力是运营商维护工作的重点内容之一。本文探讨了动态DNS的原理和模拟实现,根据DNS在移动分组域网络中的重要作用,引入DNS动态负载均衡技术,从而自动地实现业务均衡和迁移,并进一步讨论了GGSN状态的监测方法。     

融合SDN技术的IP承载网流量调度系统研究

随着互联网业务迅猛发展,IP承载网网络规模和业务流量呈跨越式增长,传统维护模式难以支撑网络运维需要。课题研究通过引入IGP/BGP路由协议监听分析技术,实现网络拓扑自动生成、业务路由端到端可视;利用Netflow技术实现流量流向实时可视;在实现路由及流量可视化的基础上,叠加SDN流量调度技术,自动监测链路拥塞,智能选路,自动进行策略仿真和下发。基于课题研究开发基于SDN架构的IP承载网流量调度系统,有效提升维护质量和效率,满足精细化运维的需要。     

基于主动表观模型的人脸特征点自动标定

主动表观模型是一种具有高精度和强鲁棒性的特征点标定算法。本文主要研究了主动表观模型在人脸图像特征点自动标定方向的应用,并通过MATLAB工具对目标人脸图像进行了特征点自动标定实验。实验结果证明主动表观模型是一种有效的特征点标定算法。     

增值业务自动拨测系统建设方案探讨

增值业务自动拨测系统是降低增值业务人工拨测工作量,发现增值业务产品问题和评估增值业务产品质量的有效手段。介绍了增值业务拨测平台的基本功能和能力要求,并对平台的模型和建设问题进行了构想和探讨。     

基于PI逆模型的快速微摆反射镜的开环控制

由压电陶瓷驱动器构成的快速微摆反射镜平台存在迟滞特性,影响了对快速微摆反射镜的控制。为了能够有效的对快速微摆反射镜进行控制,采用基于PI逆模型的开环控制方法。首先,采用PI模型对快速微摆反射镜平台的迟滞特性建立数学模型,通过最小二乘法辨识PI模型的参数;其次,基于PI模型的可逆性,求解PI逆模型参数;最后,验证基于PI逆模型的开环控制方法的有效性。根据轨迹跟踪实验得到的数据,在正弦波轨迹输入信号下的均方根误差为1.23%,最大误差为2.45%;在三角波轨迹输入信号下的均方根误差为1.3%,最大误差为2.37%。证明了基于PI逆模型的开环控制方法是可行的,能够有效地控制快速微摆反射镜。     

基于阈值优化的压电微动平台迟滞模型

为减少PI迟滞模型的无效算子数,进而提高模型的运算速度,采用阈值优化法来改进PI迟滞模型。采用PI迟滞模型拟合被描述对象的实测曲线时,实测曲线在各阈值点处的斜率可用该点处迟滞算子的权重和来表达,该权重和越接近该点曲线的斜率,PI迟滞模型的精度就越高。这样便可在保证模型精度满足要求并使其在各阈值点处相同的情况下,对模型的阈值进行优化,进而减少模型的算子数。根据测得的最大实测升程曲线,基于阈值优化法,建立了压电微动平台的迟滞模型。实验结果表明,所建模型算子数仅为7个,且不含无效算子;在0~15.94μm的位移范围内,所建模型的误差变化范围为0.23~0.40μm,即1.4%~2.5%。所建模型可较好地描述压电微动平台的迟滞非线性。     

综合运维机制及解决方案

1 综合运维体制模型针对接入网的综合化和融合化趋势,应该建立分层的接入网综合维护机制,其核心思想是“设备层统一维护,业务层分权维护”,从而实现网络管理系统和业务管理系统的相对独立(统一的网管平台实现多业务网络的集中维护管理,同时提供多个业务发放渠道满足多业务网络的业务开展需求),组织结构也可以相应地简化为接入网网管中心和数据维护中心,可以明确各部门的职责划分、简化维护流程,从而有效降低维护成本,提高维护效率。1.1设备层统一管理接入网网管中心负责综合接入网的设备层维护,其网络管理系统可以实现窄带话音接口板、宽带…     

中国电信“全球眼”行业应用丰富 视频监控朝高清时代迈进

目前在浙江、福建、上海、广东等地,中国电信已有部分高清监控项目投入建设,并将在未来一两年内,形成更大规模的应用。中国电信全球眼业务经过几年大力的市场拓展,截至2011年9月份,全国已开通近55万个监控点。特别是随着平安城市的不断建设,中国电信积累了丰富的业务运营经验,培养了一支从项目实施到运营维护的专家队伍,取得了良好的经济效益和社会效益,有效提升了中国电信的品牌效应和企业价值。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.