基于web的网络数据库安全技术研究

当前,web的网络数据库具体安全技术问题可以总结成这两个方面,具体包括：一是,将网络数据库的保密性工作做到位;二是,一定要全面保证web数据库是完整的。将全面针对web网络数据库相关安全技术问题进行研究,并且在此前提下,将具体从互联网系统和SQLServer2006网络数据库系统的安全技术方面进行管理,并且基于web的网络数据库安全技术在当前网络大环境下进行相关讨论。     

基于web的网络数据库安全技术研究

当前,web的网络数据库具体安全技术问题可以总结成这两个方面,具体包括:一是,将网络数据库的保密性工作做到位;二是,一定要全面保证web数据库是完整的。将全面针对web网络数据库相关安全技术问题进行研究,并且在此前提下,将具体从互联网系统和SQL Server 2006网络数据库系统的安全技术方面进行管理,并且基于web的网络数据库安全技术在当前网络大环境下进行相关讨论。     

论oracle数据库备份与恢复策略

oracle数据库凭借其强大的功能性和灵活性等优点在数据库中处于关键地位。为保证数据库安全,防止数据丢失,文章将首先分析数据库出现故障的因素,然后重点讲解备份和恢复策略,希望能为维系数据库的安全提供一些参考。     

妇幼系统与医院信息系统数据共享方案及实现

目的:实现妇幼系统与医院信息系统间数据交互和信息共享.方法:以医院信息系统后台数据库oracle为基础,通过oracle提供的HSODBC异构数据连接方式,连接妇幼系统后台数据库PostgreSQL,并创建相应交互事务处理过程.结果:成功实现妇幼系统与医院信息管理系统数据共享及交互,取得良好效果.结论:本接口方案设计合理,切实可行.     

办公数据库访问权限管理系统升级措施

办公室数据库是办公室管理过程的重要组成部分,数据库的信息系统安全管理包括两个方面的内容:一方面是数据库平台,另一方面是数据存储平台。数据库权限的设计与升级为了能够保证平台的安全,同时也可以增加控制的有效性。当办公数据库访问存在问题,就会影响数据平台的正常使用。文章从办公室数据平台的整体构成出发,总结数据库平台访问权限升级的措施,希望对认识数据库平台有一定的帮助。     

计算机数据库的安全管理

当前对计算机数据库的安全管理,正随着计算机网络风险因素不断复杂化而成为人们管理计算机的重要内容,但是就目前的安全管理开展的成效来看,尽管数据库的安全管理在一定程度上规避了一定的网络风险,但是面对越来越复杂的网络环境,数据库的安全保护系统仍然受到严重的威胁,一方面由于人为使用计算机时安全意识较低,另一方面相关的技术性防范工作仍然难以全面应付复杂的网络威胁因素的侵袭,为了保证各领域生产的高效安全开展,保证计算机数据库的安全任重而道远。     

网络数据库安全探讨

网络数据库在电子商务、电子政务等领域的应用日新月异。然而,如何保证开放网络环境中网络信息系统的安全一直是一个严重而又关键的问题,作为其核心的网络数据库的安全性涉及网络信息管理系统各个方面的全局性问题,是保证整个信息管理系统安全的关键。网络数据库的安全性问题已成为大型网络信息系统建设的一个十分重要的问题。本文论述了网络环境下数据库所面临的安全威胁,分析了提高网络数据库安全性的解决办法。     

计算机网络数据库的安全管理技术分析

信息储存和信息管理是计算机网络数据库的主要功能.很多计算机用户会将一些重要信息储存在计算机网络数据库中,在工作开展的过程中,通过将信息储存在计算机网络数据库中,可以大幅度提高工作效率.最近几年,我们国家在计算机网络方面取得了很大的发展成果,但其仍处于发展的过程中,并且由于网络具有一定的开放性和互联性等各种各样的独特性以及普通的人民群众对计算机技术的性能缺乏一定程度的了解,所以使得网络信息泄露的现象时而发生.因此,为了能够有效提高计算机网络数据库的安全管理,很多的技术人员对计算机网络数据库的安全管理技术进行了分析,并针对计算机网络数据库安全管理技术中存在的问题提出了很多的解决措施.     

计算机网络数据库的安全管理技术分析

我国计算机网络数据库一直处在高速发展阶段,随着科技和社会的飞速发展,计算机网络技术已经在众多领域得到应用,使得对信息数据库的管理更加轻松便捷。但是网络本身具有安全性问题,所以一定程度上给网络数据库的运行造成一定的干扰。所以本文主要分析计算机网络数据库的安全管理技术,探讨计算机网络技术安全的解决方案。     

ORACLE数据库备份与恢复技术及在网间结算系统中的应用

oracle数据库是目前行业内使用非常广泛的大型关系型数据库,备份与恢复工作是数据库维护工作的重要方面。本文总结了oracle数据库的备份与恢复的几种方式,并通过在网间结算系统中的应用,提供了保障系统正常工作的手段。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.