裸眼立体显示器系统结构研究

裸眼立体显示器是不需要佩带助视眼镜的立体显示设备．它使用特殊的光学元件改变显示器和人眼的成像系统。文章讨论基于狭缝背光照明的液晶立体显示器的原理及其组成结构。利用通用的TFT LCD液晶显示器作为图像显示部件，通过科学设计符合立体显示照明原理的照明板部件．与液晶盒精密装配在一起组成裸眼立体显示屏，配合电路系统和显示软件完成裸眼立体显示器的系统结构设计。     

正、反面液晶显示器

三菱电机开发了正、反面同时显示的液晶显示器。这种显示器是在两块透明平板光源中间夹着液晶屏，液晶显示器的正、反面同时可以显示相同的图像或不同的图像。将此显示器应用到手机时，主屏和副屏尺寸一样大；用到手机照相机自拍时，在镜头侧副屏上能够看到自己图像。该液晶显示器将得到广泛应用。     

新型液晶立体显示器

日立显示和NTT公司联合开发了不带特殊眼镜而直视的液晶立体显示器。此器件是把两块23cm（9in）TFT-LCD器件重叠安装，两块TFT-LCD屏的间隔为7mm，前后两块屏因显示同一个画面的亮度不同而得到画面图像的立体感。与左右眼睛分别看不同图像而得到立体图像相比较，新型立体显示无疲劳感，产品即将投放市场。     

立体电视动态图像显示技术

近年来随着数字图像处理等基础技术的发展,人们对以液晶为主的显示器件和成像器件能在立体电视动态图像显示技术领域取得进展寄与了期待。因此,有关无需采用眼镜的三维图像显示器的研究开发活动颇为盛行,与微机相匹配的三维显示器和家用立体电视机的问世,促使其应用亦在迅速发展。这种三维图像显示器的开发和实用,将对信息     

液晶显示器γ曲线与图像显示效果研究

介绍了液晶显示器γ曲线的校正方法,通过对不同γ曲线形状下显示图像亮度及色纯度的对比测量,表明液晶显示器具有S形的γ曲线时,图像的透亮度好,颜色鲜艳,显示效果较佳.     

基于狭缝光照明的3D-LCD光学结构分析

本文在分析立体视觉机理的基础上，介绍了一种以液晶显示器为基础的平板立体显示器。利用狭缝背光源照明液晶层，使得显示在液晶层的纵向条形左右图像，分别被观看者的左右眼观看到，从而形成自由立体图像。本文从光学的角度，对立体视觉机理、立体显示原理、用于液晶立体显示的狭缝背光源的光学原理作了详细分析。     

某些座舱显示器的技术现状和发展

座舱电子显示器主要是以CRT、等离子显示器和液晶显示器为基础。叙述了三种显示器的发展概况。最后介绍了国外新研制的栅栏型三维显示器。使用这种显示器,观看者不用眼镜或目镜就能看到全色立体图像。     

IPS TFT显示器用液晶材料的发展

ＩＰＳ显示是一种很有希望的制作的大面积液晶显示器的技术，用该技术制得的显示器具有很好的图像质量和视角特性，可作监视器用于台式计算机和ＴＶ 。ＩＰＳ显示器对液晶的要求不同于ＴＮ－ＴＦＴ显示器。考虑到这种不同要求，为了优化混合材料的设计我们确立了液晶材料的特性。用新的液晶材料，成功地改进了混合材料的粘滞特性，该混合材料能使ＩＰＳ显示器实现移动图像显示。     

点阵式LCD显示复杂图形的解决方案

以8031单片机控制MGLS-12864液晶显示器为例，利用图像处理软件Photoshop5、单色BMP图像取模转换软件LcdCovert1，实现对复杂图形进行快速、方便地取模后，显示在液晶显示器上。     

具有影像增强反射层的全彩色透反射型胆甾相液晶显示器

本文介绍了一种低功耗全彩透反射型液晶显示器。该液晶显示器利用高双折射率(Δn)胆甾相液晶(Ch-LC),并在透射区域的顶部设置了一块影像增强反射层(IER)。高双折射率(Δn)胆甾相液晶能够反射宽波段的光而显示白色图像。采用传统的彩色滤光膜方法就可以显示全彩色图像。此外,在透射区顶部的IER为透射光和反射光提供了相似的光路。在任何环境下,透射区与反射区总是显示相同的图像颜色,因而大大提高了全彩色透反射型胆甾相液晶显示器显示图像的质量。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.