基于改进加权核范数的红外弱小目标检测

针对传统基于鲁棒主成分分析(RPCA)的红外弱小目标检测算法对噪声不敏感,算法运行时间长,鲁棒性不强的问题,提出一种重加权红外小目标图像模型,并用非精确增广拉格朗日乘子法(AIALM)求解。该方法首先将原始红外图像转化为红外块图像模型,然后采用重加权核范数对背景块图像进行约束,较好地保留了背景边缘。针对单纯使用l1范数不能抑制某些噪声或杂波的问题,引入了加权l1范数,进一步增强了目标图像的稀疏性。最后,将红外块图像模型转化为重加权RPCA问题,并用AIALM求解。通过大量实验表明:该算法在抑制背景杂波以及目标检测性能方面要优于其他传统算法。     

基于改进加权增强局部对比度测量的红外小目标检测方法

红外弱小目标检测技术是红外搜索与跟踪系统的重要组成部分(IRST)。一般来说,在复杂背景环境下,红外弱小目标检测往往会有高虚警率和低检测率的问题。为了解决这一问题,提出一个改进的加权增强局部对比度测量（IWELCM）检测框架,具有重要意义。首先,通过将局部对比度机制与信杂比(SCR)的计算相结合,提出一个增强的局部对比度测量方法,在增强图像中疑似红外弱小目标区域的同时也提高图像的SCR。其次,通过利用红外图像中弱小目标的特性,以及目标与周围背景的统计差异,提出一个改进的加权函数来进一步增强目标和抑制背景。最后,采用一个自适应阈值分割的方法去获取检测的目标。在不同场景的数据集上的对比实验表明,与七种现有流行的方法相比,提出方法在复杂背景下能够有效地从干扰对象中提取真实的红外弱小目标,具有更好的检测性能。     

基于低秩稀疏分解的红外弱小目标检测算法研究进展

红外探测系统具有隐蔽性好、抗干扰能力强等特点，广泛应用于军事和民用领域，红外弱小目标的检测是红外探测系统中的重要组成部分，已成为了当前的研究热点。近年来，学者们在基于低秩稀疏分解的红外弱小目标检测算法研究方面取得了丰硕的成果，为此，重点阐述了基于低秩稀疏分解的红外弱小目标检测算法的研究现状和研究进展。从背景分量约束、目标分量约束和联合时域信息约束等3个方面详细地综述了基于低秩稀疏分解的红外弱小目标检测算法。首先把背景分量约束划分为块图像的低秩约束、张量的低秩约束和全变分约束，其次从目标的稀疏性表示和融合局部先验的目标分量加权策略两方面分析了目标分量的约束，然后分析了联合时域信息约束，将典型的基于低秩稀疏分解的检测算法和单帧检测算法进行了性能对比，最后讨论了该领域下一步的研究方向。     

低空轻量级红外弱小目标检测算法

精准的红外弱小目标检测是实时监控、追踪、制导的关键;红外弱小目标存在检测难度高、误检高、漏检严重的问题。为了提高红外弱小目标检测算法的实时性和检测精度,提出了一种超轻量红外弱小目标检测算法SL-YOLO。首先,重设计下采样方案,针对红外图像特征信息调节网络架构,解决红外弱小目标特征梯度降低和特征消失问题;然后设计网络模型剪枝算法,实现剪枝算法与网络结构的融合,去除冗余参数,实现检测速度的提高;最后设计Varifocal-SIoU损失函数,在均衡正负样本与重叠损失的同时,对正样本进行加权处理,解决背景干扰问题。实验结果表明,在SIRST和IDSAT数据集下检测精度分别提高至96.4%、98.1%,模型体积和计算量可压缩至190 kB、0.9 GFLOPs,推理速度降至3 ms以下。与主流算法进行对比,改进后算法在检测精度、模型体积、计算量等方面均取得了不错的成绩。能够满足实时性检测需求。     

基于改进加权局部对比度的红外小目标检测

在复杂背景的红外图像中弱小目标通常淹没在高亮边缘与强杂波处,提出一种基于改进加权局部对比度的红外小目标检测方法。利用小目标的局部特性建立一种加权函数将目标与其背景邻域的差异点乘凸显目标,进而与相接背景邻域作比值运算达到抑制复杂背景的效果;通过目标的各向同性和背景的各向异性,采用六方向梯度决策法创建背景抑制模型进一步抑制高亮边缘,实现降低虚警率,提高检测率的目的;最后,通过卷积计算将两者结合,采用自适应阈值分割检测真实目标。实验结果表明,该算法在复杂背景及强杂波干扰下有较强的鲁棒性。     

基于多向背景预测的红外弱小目标检测

杂波背景中的弱小目标检测是红外图像处理中的一个重要问题。普通的二维滤波背景预测方法可以用来检测图像中的小目标,但是也存在对复杂场景的适应性差,杂波边缘虚警高的问题。通过分析二维最小均方滤波背景预测算法的方向特性,在对图像四邻域滤波残差进行像素级加权融合后,得到了一种基于多方向融合自适应滤波背景预测的弱小目标检测方法。对构造图像和实际红外云杂波场景中的小目标检测仿真表明,该方法对不同背景适应性较强,在保持目标检测概率的同时显著抑制了杂波边缘虚警,有效提高了杂波背景中小目标的检测性能。      

一种基于多特征参数融合的弱小目标检测算法（英文）

基于特定场景的先验信息,通过分析多个特征参量对弱小目标检测的性能,利用各参量对弱小目标检测的长处,设计了一种基于多特征融合的目标检测算法。以空域匹配模型、区域加权信息熵和频域滤波自适应阈值分割3种方法为单特征量,基于各个特征量对特定应用场景下的大量目标检测的先验结果,利用概率论的知识,构造了有利于提升计算速度和检测概率的两种多特征融合方法。实验表明,该方法能够有效地提高单帧弱小目标的检测性能。     

复杂海洋环境中弱小目标的红外辐射特性研究及图像仿真

弱小目标检测是当今研究的热点问题之一.分析目标背景的红外特性,进行红外仿真,可作为弱小目标检测算法的研究基础并为目标检测算法研究构造仿真平台.本文在建立弱小目标热模型的基础上,考虑了海面背景的辐射模型以及红外辐射的大气吸收模型,进而计算出弱小目标的红外辐射及大气衰减量,最终可获得经过大气衰减的弱小目标红外仿真图像,取得了较好的效果.     

基于局部二元模式算子的红外弱小目标检测

文中针对在传统红外弱小目标检测中,需要进行背景抑制滤波所带来的图像性质改变和检测速度不理想的问题,提出了一种基于局部二元模式(local binary pattern,LBP)算子的红外弱小目标检测方法.该方法对传统LBP算子进行了改进,使其提取的LBP编码值可以有效地描述红外弱小目标的灰度分布特性,达到了在不进行背景抑制滤波的条件下有效检测弱小目标的目的.结合改进的LBP算子和红外弱小目标灰度的"尖峰"特征,建立了灰度自适应快速扫描机制,有效提高了检测速度,降低了重复告警的出现概率.通过实录红外图像序列检测实验,证明本文方法在检测性能和检测速度方面的有效性和优越性.     

基于显著性与尺度空间的红外弱小目标检测

针对复杂的天空背景,提出了一种基于显著性与尺度空间的红外弱小目标检测算法.首先通过频域残差法对原始图像进行初步处理,缩小红外弱小目标的待识别目标区域;接着利用DoG算子得到预处理后图像的尺度空间并实行特征点检测,获得最佳尺度图像,再对特征图像进行加权融合;最后通过信息熵分割来实现红外弱小目标的检测.仿真结果表明,本文方法跟文献中所提的优秀算法相比,能有效地检测出红外弱小目标,提升了目标图像的信杂比.同时,能很好地适应不同复杂场景,为红外弱小目标的跟踪应用奠定了基础.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.