智能电网云计算及生命周期管理平台探究

智能电网下云计算及生命周期管理平台主要针对电网信息资源共享及统一管理,基于“私有云”应用架构,通过构建底层云计算平台基础设施及上层应用程序平台,实现资源的最大化共享和规范化管理。结合云计算基础构建及其应用实践,介绍了轻量级基础架构云计算平台的建设要点,提出了云计算服务平台全生命周期管理思路,通过对云资源的申请、预留、审批、供给、修改到释放各立程碑点的监控,实现云计算服务的全程动态管理。建设思路清晰,实施快捷,功能符合智能电网发展需求,扩展性强,能有效提高资源管理和应用。     

基于云计算平台的鉴权分析

国内云计算平台以系统内部认证和授权作为主要的鉴权方式。在研究国外开源的云平台项目的鉴权方式基础上,分析了云计算平台的认证管理和授权服务过程,实现了鉴权模块的集成,云计算平台在调用服务时通过鉴权模块的统一认证和授权,可以达到权限和资源的有效管理。试验结果表明,此模块的集成可以应用到云计算平台中。     

无线电管理信息系统的云解析

0 前言 信息技术系统是开展无线电管理日常工作的业务平台,也是推动无线电管理事业不断进步的重要支撑.国家无线电监测中心正在加紧建设一体化、一站式的信息平台,以解决当前技术设施建设和应用中的诸多问题.本文通过学习近年来新兴的云计算相关技术,探讨了全新的IT架构下无线电管理信息技术工作革新的巨大潜力,旨在寻求更加科学合理、集约环保的信息化建设模式. 1 云计算的技术优势 云计算,作为一种新型商业模式,近年来在全球IT业界获得了广泛研究和持续发展.美国国家标准与技术局给出的定义为:云计算是用户通过网络按需访问、使用共享计算资源池的一种计算模式.这里所含的资源包括服务器、存储单元、应用软件、服务程序、网络甚至是其他用户的共享数据信息.资源池的管理和使用充分集约,并能快速、均衡地占用和释放.抽象的云计算拓扑图见图1.     

云计算在智慧旅游中的应用

随着科学技术的不断发展和市场竞争的加剧,我国旅游业进入了一个更为激烈的竞争环境.而云计算作为一种信息通信技术,已成为推动经济社会信息化发展的重要驱动力量.通过云计算技术的IaaS、PaaS和SaaS模式将旅游资源进行虚拟化,构建智慧旅游云平台,对旅游资源统一管理、统一营销、统一服务,从而有效实现旅游产业的协同发展,提高旅游资源信息化处理能力和可靠性.通过对云计算技术和智慧旅游的内在特点研究,阐述了云计算技术在智慧旅游发展中的重要价值和意义,进而提出了基于云计算的智慧旅游解决方案.     

下一代云计算基础设施架构与关键技术

云计算不仅是一种商业模式,更加是软硬件技术集大成者,通过基础设施软硬件服务整合、资源高度集约,以更加灵活、可扩展的方式支持数字化业务的变革和创新。基于云计算市场趋势和业务需求的迭代更新,提出了下一代云计算基础设施架构,包括分布式的云网资源、通智融合的软硬件基础设施及异构管理及协同调度平台,并通过介绍各组件功能范围和关键要素,引出下一代云计算高效能、广分布和超大规模等特性。由于云计算新型基础设施层是下一代云计算技术创新的热点,从算力、运力和存力3方面分别介绍了云基础设施软硬件资源的关键技术,并分析了平台层的资源纳管和协同调度技术,最后对下一代云计算基础设施相关技术进行了展望。     

基于云计算的虚拟化数据中心(上)

阐述了云计算如何实现资源虚拟化、如何管理虚拟资源和如何使用云计算平台部署虚拟化数据中心等VDC建设中的关键问题,针对VDC的数据安全、网络安全、虚拟机安全等方面提出了部署建议,提出了云计算的接口标准、设备标准和安全管理规范的内容,并给出了应用被攻击后的响应策略.     

基于云计算的终身教育服务平台设计

为了满足符合终身教育的要求,设计一种“云学习”系统,它可以根据用户的需求实现弹性扩展;用户学习的对象是知识碎片化了的积件;所有的用户需求都被看作是一种云计算服务要求。这种“云学习”是一种基于“云计算”的学习模式,云学习利用云计算技术,在云计算平台上,通过云计算平台对资源进行统一管理和调配,并以服务的形式提供给用户,以此构建基于云计算的终身教育服务平台。仿真实验测试表明,基于云计算的终身教育服务平台利用了云计算的定制服务和并发计算优势,优化了现有资源的整合,能为学员提供定制终身教育服务的在线学习方式。     

基于SPICE协议的云实验室设计与实现

随着云计算和互联网的快速发展,云计算技术也不断地影响和促进信息化教学的发展。桌面虚拟化通过KVM虚拟化技术和云计算技术相结合,将用户桌面环境和计算环境解耦合。SPICE协议作为开源的虚拟桌面传输协议能够在服务器和远程用户终端上部署虚拟桌面。在Open Stack中使用KVM虚拟化技术搭建服务器集群,能够实现海量计算能力和灵活的资源分配机制,提高了云平台的安全性和稳定性。用户通过客户端获得便捷的虚拟桌面环境,数据中心将虚拟资源集中式管理,便于教育资源的统一和安全管理,降低学校的运维和人力成本,节省硬件资源。     

基于FusionCompute的IaaS云平台的构建与实现

针对企事业单位数据中心业务系统扩展存在的成本高、周期长、资源利用率低等问题,利用华为FusionCompute云计算技术,实现数据中心IaaS云平台的构建,IaaS云平台将数据中心内IT基础设施进行资源逻辑化,并对逻辑资源进行统一调度和管理,为用户提供远程资源访问服务。操作人员通过网络远程获得如同直接操作硬件设备一样的用户体验。     

《云计算白皮书》选编 云计算

1云计算概念云计算(Cloud Computing)是一种通过网络统一组织和灵活调用各种ICT信息资源,实现大规模计算的信息处理方式。云计算利用分布式计算和虚拟资源管理等技术,通过网络将分散的ICT资源(包括计算与存储、应用运行平台、软件等)集中起来形成共     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.