一种微通道换热器的设计与分析(英文)

设计了一种用来测试微通道换热性能的实验装置。该系统由微通道换热器、模拟热源、微型水泵、连通管、测试三通及其它测试元件构成。通过检测温度、压力和流量等参数能够得到微通道的传热和摩阻参数。针对该实验装置,对微通道中流体的压降和传热分别进行分析和研究。实验表明,当微通道水力直径为381μm时,宏观理论公式已不适用于微通道摩阻及其换热的计算。此时,微通道的摩阻比宏观理论计算值小31.6%～41.9%;微通道结构具有良好的换热性能,其Nu可达9.2。     

一种微通道换热器的设计与分析

设计了一种用来测试微通道换热性能的实验装置。该系统由微通道换热器、模拟热源、微型水泵、连通管、测试三通及其它测试元件构成。通过检测温度、压力和流量等参数能够得到微通道的传热和摩阻参数。针对该实验装置，对微通道中流体的压降和传热分别进行分析和研究。实验表明，当微通道水力直径为381μm时，宏观理论公式已不适用于微通道摩阻及其换热的计算。此时，微通道的摩阻比宏观理论计算值小31．6％～41．9％；微通道结构具有良好的换热性能，其Nu可达9．2。     

整体集成式斯特林制冷机实验研究

为了对斯特林制冷机的内部工作参数、性能进行研究，文章针对整体集成式斯特林制冷机的压力、制冷量、功耗、漏热等进行了实验测试。采用了压电式压力传感器、真空装置、加热电阻等实验设备。重点分析了制冷机内的压力波形，压比变化。本实验对整体集成式斯特林制冷机数值计算有着重要的实验依据。     

真空低温环境下超大面源黑体现场校准技术

红外辐射面源黑体应用于特定红外特性目标的模拟,各种红外探测、制导系统的外场测试。随着空间应用的红外成像器的口径的增大,红外辐射面源的口径也相应增大,为了保证超大辐射面黑体的性能指标满足要求,必须对其在真空低温条件下进行性能校准。但目前国内还没有相应计量标准,无法保证测试结果的准确可靠。设计了一种真空低温环境下超大面源黑体现场校准装置,实现对超大面源黑体的发射率、辐射温度、温场均匀性、温度稳定性等性能参数的校准,并取得了较好的试验结果,实现了真空低温环境下超大面源黑体的参数校准。     

红外热成像系统用硫系玻璃的熔制技术

硫系玻璃是一种理想的红外光学透过材料,在红外热成像技术领域具有显著的应用价值。红外热成像技术要求所用硫系玻璃材料具有高透过、高均匀、大尺寸等性能优势和批量化、低成本制备特点,玻璃的熔制技术是有效解决上述需求的关键所在。概括介绍了硫系玻璃的真空密封安瓿瓶熔制、真空/气氛保护坩埚熔制技术和装置,特别提出和说明了一种硫系玻璃熔制新方法气氛保护下的二次熔制方法,详细分析了该方法对硫系玻璃的光谱性能、内在光学质量和光学均匀性的影响,研究发现:随着保护气体纯度提高到99.999%,二次熔制后玻璃的光谱透过性能与真空密封安瓿瓶中接近,玻璃的内在光学质量和光学均匀性均显著改善。     

一种铝基平板热管特性的研究实验

制造了一台铝基平板热管原理样机,并搭建了测试装置。利用该测试装置对样机的特性进行了系统性的实验研究。实验表明,热管对温度响应迅速,能够快速地实现温度平衡;200 W功率时,冷热面上的温差仅为0.87℃和1.37℃。随着热流密度的增加,热管温度均匀性的优势变得更加明显,热阻仅为0.100℃/W。该热管样机具备优秀的启动性能、均温性能和良好的传热性能。     

真空紫外反射镜的制备及其测量

本文研究了真空紫外(300～2000?)反射膜的反射特性,这些特性包括反射率和材料种类、膜厚、制备参数、人射角及人射波长的关系。介绍了真空紫外反射率的测量装置,并给出了测量结果及误差分析。     

基于随机有限元与神经网络的传热参数的智能辨识

传热学参数之间的关系是非常复杂的,如何建立这种复杂的非线性关系,以便于对传热参数进行合理的辨识和预测,是一个值得深入思考的问题。传统的传热参数辨识方法繁琐复杂,适用条件极为苛刻。而利用神经网络进行参数的辨识,又面临着样本的构造和选取的一个“瓶颈”。为此,本文提出将随机有限元法和神经网络相结合,进行传热参数的智能辨识。其中随机有限元法用于构造神经网络所需的样本集,对神经网络进行训练和测试,神经网络则进行参数的推广辨识,收到了比较满意的效果。     

TFT-LCD Cell工程机械手上Pin的改造方案

本文介绍了一种TFT-LCD行业真空对盒工序用搬运机器人,机器人有上下手臂,其中下手臂上设置有位于两侧的侧臂和2个位于中侧的中臂,中臂上设有3个通过喷出气流将玻璃托起的喷气口,喷气口通过导气管与外设气泵连接;侧臂或中臂上还设有一检测装置;外设气泵、检测装置与控制装置连接;侧臂上设置有5个真空垫片。真空对盒工序用搬运机器人下手臂上的喷气口设于玻璃基板像素区,且与所搬运玻璃基板没有接触,避免了面板像素区出现亮点和封框胶断胶;当搬运的面板尺寸发生变化时,无需移动喷气口,减少了设备的空闲时间,提高了设备的使用效率。     

针对太赫兹波段介电参数测量的宽带准光系统

该文针对太赫兹波段材料的介电参数提取的需求,利用准光学技术设计了一套宽带介电参数测量系统并讨论了自由空间的介电参数提取方法。通过平面扫描的方法验证了系统电磁传输特性。结果表明,准光系统的近场参数与设计结果相吻合。利用石英硼化玻璃和水样品进行了测试,并利用数值方法对介电参数进行提取。测试结果表明,利用准光方法测试所得到的介电参数与典型值相吻合,进一步验证了该方法的有效性。      

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.