基于PCI总线的1553B总线接口电路的设计与实现

本文介绍了PCI总线和MIL-STD-1553B总线转换的实现方法。该设计使用PLX公司的PCI9052和DDC公司的1553B协议芯片BU-61580,通过ALTERA公司的FPGA芯片EP1K100进行PCI协议和1553B协议的转换。使用Visual C 完成对PCI的读写操作,进而控制61580芯片实现1553B总线的数据传输。最后成功实现了用计算机通过PCI卡完成1553B总线控制器(BC端)的功能,并通过了系统测试。     

基于PCI局部总线的1553B总线接口卡设计

根据1553B数据总线协议及其接口技术要求,设计了一种基于PCI局部总线的1553B总线接口卡。系统使用PLX公司的PCI9052和DDC公司的1553B协议芯片BU-61580,通过FPGA芯片EP1C12B进行PCI协议和1553B协议的转换,使用DSP控制器TMS320F2812作为下位机的主控单元,并编制了接口卡驱动程序,实现了1553B总线和PCI总线的转换。     

基于FPGA的1553B总线系统设计

针对卫星通信的复杂性和高可靠性,提出了一种基于Xilinx新型的嵌入Power PC440处理器硬核和美国DDC公司1553B协议芯片BU-61580构建的1553B总线系统。对1553B总线系统进行了简要介绍,针对1553B总线系统的软硬件设计和BU-61580三种工作模式的初始化进行了详细分析,对1553B总线系统进行了测试。测试结果表明该系统是可靠通信系统,设计满足1553B总线协议标准。     

基于DSP的1553B终端设计

介绍了MIL-STD-1553B总线的完备接口芯片BU-61580的特点和工作原理。以16位缓冲器方式接口为例,叙述了利用BU-61580设计基于DSP的1553B终端的方法,最后,通过例子具体分析了BC、RT工作模式下软件的初始化过程及工作流程。实验验证了文中方法功能强大、应用较复杂,为1553B总线传输接口的设计提供了丰富的资源。     

基于BU-61580的航空1553B总线RT模式设计

BU-61580是航空工程领域广泛采用的MIL-STD-1553B总线的控制芯片,本文从硬件连接、逻辑时序以及软件设计三方面论述了BU-61580工作于RT模式时的系统设计方案。硬件基于FPGA与DSP实现,增强了整个系统的可裁剪性与移植性。     

BU-61580芯片与PPC处理器的接口设计与分析

文章简要介绍了MIL-STD-1553总线的接口芯片BU-61580的功能及其特点,重点从硬件方面分析了RT模式下的几种不同的接口方式,具体分析了BU-61580与PPC系列代表处。理器PPC755如何进行硬件设计,如何能比较好的缩短共享内存的仲裁时间问题。     

BU-61580芯片与PPC处理器的接口设计与分析

文章简要介绍了MIL—STD-1553总线的接口芯片BU-61580的功能及其特点．重点从硬件方面分析了RT模式下的几种不同的接口方式,具体分析了BU-61580与PPC系列代表处。理器PPC755如何进行硬件设计,如何能比较好的缩短共享内存的仲裁时间问题。     

基于1553B总线的接口实现与测试

在深入研究1553B总线协议和总线实现方式的基础上,通过以BU-61580协议芯片为核心设计了原理样机的软硬件系统,原理样机实现了1553B总线协议终端的功能,并结合总线测试卡进行了功能测试。测试结果表明,数据在1553B总线上传输正常,原理样机实现了其BC和RT的全部功能,满足MIL-STD-1553B总线协议的要求。     

基于BU-61580的MIL-STD-1553B总线设计

由于MIL-STD-1553B总线良好的通讯性能,在现代航空通讯系统中,MIL-STD-1553B总线正发挥着十分重要的作用.文中以DDC公司的BU-61580芯片作为MIL-STD-1553B总线接口的核心控制器,针对航空动力控制系统,介绍其硬件接口电路设计要点,以及实现1553B总线远程终端和总线控制器的软件设计方法,利用航空动力控制系统的双通道特点,实现了对1553B总线通讯的自检测功能.     

61580芯片与DSP芯片的连接关系分析

文章简要介绍了MIL—STD-1553总线的完备的接口芯片BU-61580的工作原理及其特点,并介绍了作为当前1553总线应用系统中使用最多的器件,它是如何在3种不同的工作模式（BC＼RT＼MT）下运行的。具体分析了DSP芯片微处理器ADSP2101是如何与BU-61580进行连接,以及在不同配置下连接方式的差异。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.