红外成像传感器系统非均匀性成因研究

从探测器的响应特性、光学系统的相对辐射和外壳的杂散光三个方面对红外成像传感器系统非均匀性的产生原因进行了理论研究。红外焦平面阵列中,探测元与探测元间的结构及材料差异会影响量子效率及暗电流,从而影响探测元的响应特性。光学系统主要通过光瞳畸变矩阵影响场景辐射通量的分布,光学系统本身的辐射对非均匀性的贡献可以忽略。外壳的杂散光可分为高温部分和低温部分,忽略低温部分,引入系统冷屏效率的概念,建立了高温组件的辐射模型。该理论研究对光学系统的设计及非均匀性校正具有一定的参考意义。     

中红外多波长辐射温度计的设计

介绍了以高信噪比同时测量近室温目标温度和光谱发射率的中红外多波长辐射温度计。详细说明了其光学系统及电气系统设计．采用高像质、大光通量的折反式光学系统和闪耀光栅分光系统,通过多元碲镉汞探测器线列及电气系统,可同时检测目标温度及发射率．内置黑体炉和热管恒温视场光栏和孔径光栏减小了周围环境温度漂移及杂散光对温度测量的影响．     

中红外多波长辐射温度计的设计

介绍了以高信噪比同时测量近室温目标温度和光谱发射率的中红外多波长辐射温度计,详细说明了其光学系统及电气系统设计．采用高像质、大光通量的折反式光学系统和闪耀光栅分光系统,通过多元碲镉汞探测器线列及电气系统,可同时检测目标温度及发射率．内置黑体炉和热管恒温视场光栏和孔径光栏减小了周围环境温度漂移及杂散光对温度测量的影响．     

圆锥扫描中波红外光学系统的参数检测

介绍了圆锥扫描中波红外光学系统的参数检测的方法和基本原理,探讨了测试系统的调校方法,并针对系统装调和测试过程中成像不理想的问题,利用FRED软件进行了杂散光分析。通过分析发现,红外平行光管上的星孔基片上的高反金属膜产生的杂散光是造成弥散斑不清晰的主要原因,通过紧贴星孔外表面安装一个同心云母片抑制了该杂散光。此外,若圆锥扫描中波红外光学系统的校正镜镀膜透过率不够高,则会在红外探测器焦平面的4个角上产生规则形状的杂散光,可以在图像处理时通过软件程序算法来剔除其影响。最后进行了精度测试,测试结果表明:所研制的圆锥扫描中波红外光学系统的参数检测系统满足各项精度指标要求。     

红外光纤与1—3μm HgCdTe红外探测器组合

以红外光纤和ＨｇＣｄＴｅ探测器组合构成带尾纤的新型组合件，组合件给光学系统的设计和结构以更多的随意性，并能有效地减小杂散光的干扰，改善系统的信噪比。     

热红外高光谱成像仪的灵敏度模型与系统研制

热红外谱段是对地观测高光谱遥感中非常有用的波段,受限于技术发展,热红外谱段的高光谱成像系统在国内的空间光电系统中并不多见,近年来在国家相关部门的支持下发展迅速,取得了较大进展。结合十二五期间研制的机载热红外高光谱成像仪系统,建立了信号流模型,对系统背景辐射进行了建模仿真,并对红外焦平面组件等效暗电流进行了分析测量,在此基础上得出了影响系统的探测灵敏度的关键因素,给出了系统设计低温光学100K制冷的设计依据。机载热红外高光谱成像仪研制完成后,还进行了探测灵敏度实际测量并与仿真结果进行了对比分析,对未来进一步发展热红外高光谱成像技术积累了重要数据。     

长波红外高光谱成像系统的设计与实现

针对长波红外高光谱系统背景辐射强以及信噪比低的特点,设计了能有效抑制背景辐射的长波红外精细分光光谱成像系统.利用杂散辐射分析软件,对系统进行了背景辐射分析,包括全波段各辐射面源对背景辐射的贡献分量、各光学通道的背景辐射、机械内壁吸收率对背景辐射的影响、以及光机内壁温度对背景辐射的影响.主要通过制冷光机系统的温度、抛光亮...     

空间光学系统的杂散光分析

介绍了空间光学系统的杂散光的来源,以及对红外光学系统成像质量的影响。在简化分析的基础上,讨论了杂散光分析的物理模型。利用已有的光学系统模型讨论了杂散光的计算和分析方法。主要介绍了蒙特卡罗法和光线追迹法在解决问题方面的作用,用具体的系统模型说明了杂散光计算和分析的假设条件、模型建立和计算过程等。对空间光学系统的杂散光有基础的认识。为以后利用软件进行杂散光分析打下基础。     

基于近红外双色探测器的信号采集系统设计

针对近红外双色探测器在两种不同工作 波段的光谱响应曲线及暗电流,设计了一种基于近红外双色探 测器的信号采集系统及采集方法。该系统具有多种电流转电压 档位、电压放大档位和滤波电路带宽档位,能够快速进行信号 放大和带宽控制;同时通过数字/模拟转换器(D/A)为四级放大电 路提供模拟调零信号,可有效消除由光学系统的杂散光和探测器 自身的暗电流引起的噪声。该系统具有速率快、噪声低和分辨率 高等特点。通过使用这种信号采集系统,光学系统的信噪比、动态 范围、最小可测功率等指标参数都能得到提高。     

大视场红外折反光学系统杂散光分析

杂散光分析是保证光学系统成像质量的关键技术之一,根据红外光学系统杂散光的定义,指出大视场红外光学系统的杂光来源,以及杂光对系统的影响,并且建立了消杂光结构。在消杂结构中,为了减少内部辐射,遮光罩内部使用反射式挡光环。采用TracePro软件对系统进行建模、仿真分析,结果表明此红外光学系统的杂散光得到很好的抑制:太阳杂光抑制水平PST可以达到10-5～10-8,内部辐射到达像面杂散光能量量级为10-10 Ｗ,系统可以实现清晰成像。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-