TDLAS燃烧气体温度测量吸收谱线对的选择

高温气体的温度场测量,一直以来是一项重大科研课题,而利用可调谐二极管激光吸收光谱法(TDLAS)测量燃烧气体温度的基础是吸收谱线对的选择。本文首先系统地给出吸收分子及其谱线对的选择标准,而后重点对HITEMP数据库中1547.72 nm附近的水分子吸收谱线进行研究与筛选,通过仿真分析验证了谱线对6460.595 cm-1和6461.271 cm-1适合用于TDLAS高温气体温度测量系统,最后通过搭建的实验设备验证了这一对吸收谱线对很适合用作氢气或碳氢化合物做燃料的高温气体的温度测量,对TDLAS温度场测量系统的设计具有参考意义。     

可调谐半导体激光吸收传感器的温度测量验证

开发了一种可调谐半导体激光吸收传感器,用于测量气体的温度,应用扫描波长吸收谱和固定波长调制谱探测水蒸气在7 454.4 cm-1和7 185.6 cm-1附近的两条吸收谱线。传感器可实现绝对温度测量,固定波长调制谱更可实现10 kHz以上的测量带宽。传感器的性能和精度在已知温度和压力的静室中进行测量验证,在600~1 000 K的设定温度范围,两种方法的测量误差（RMS）都小于2%。表明可调谐半导体激光吸收光谱（TDLAS）传感器对于均匀的流场具有快速和精确的温度测量能力。     

基于TDLAS的气体温度测量

介绍了基于可调谐半导体激光吸收光谱(TDLAS)的气体温度测量原理,选择了1对O2吸收谱线13 163.78 cm-1和13 164.18 cm-1,理论计算了此谱线对线强比值R与温度的关系,在搭建的高温实验装置上实现了O2温度和浓度的同时测量,并分析了压力对温度测量的影响。实验结果表明:在823~1 323 K内,温度测量的线性误差为0.65%。最大波动为±15 K,压力变化对温度测量的影响可忽略不计。     

基于TDLAS的气体检测技术算法

可调谐二极管激光吸收光谱（Tunable Diode Laser Absorption Spectroscopy,TDLAS）技术是一种具有高灵敏度、高分辨率的气体吸收光谱检测技术,具有响应快、精度高、单模特性优秀、通用性强等优势。TDLAS直接吸收法通过测量绝对吸收强度来计算待测气体温度和浓度,但容易受到颗粒物浓度、激光强度波动等影响。TDLAS波长调制法采用高频正弦信号对激光器进行调制,使得激光输出频率和强度同时受到调制,具有高信噪比和灵敏度的特点,但是需要通过标定实验或复杂的算法来确定气体参数。因此,通过吸收光谱理论和波长调制理论,推导出蕴含分子吸收信息的谐波通项表达式,并在此基础上分析谐波信号与待测气体绝对吸收强度之间的关系,建立了一种基于谐波信号的绝对吸收强度测量算法。以NH3分子在1 531 nm附近的谱线为例进行数值分析,发现调制幅度达到a=0.032 cm-1（调制系数m=2）时,仿真结果与理论计算结果（a=0）相对误差不超过2%,进一步验证了算法的可靠性与准确性。     

基于分布反馈激光器在2.0 μm波段对CO2气体温度的测量

利用输出波长在2.0 μm处的分布反馈激光器对CO2气体的两条特征谱线进行扫描以实现气体温度的测量。介绍了利用可调谐激光吸收光谱方法进行温度测量的基本原理,提出了用多线组合非线性最小二乘法拟合高温吸收光谱的吸光度方法。常压下在静态高温炉中进行了实验,设定温度为900 K～1200 K时,经实验得到的温度值与热电偶测量值的温差在8%以内,计算得到CO2的5007.7874 cm-1吸收线强与理论计算值相对误差小于14%。为今后的气体温度测量及多参数同时测量提供了借鉴。     

基于激光吸收光谱技术的超声速气流参数测量

采用可调谐半导体激光吸收光谱(TDLAS)技术,针对超声速直连台隔离段内超声速气流温度、组分浓度、速度和质量流量进行了测量.选择H2O的两条吸收谱线7 185.597 cm-1和7 454.445 cm-1,采用直接吸收-分时扫描方式,测量流场静温为899 K,并结合吸收面积得到H2O的组分浓度20.7%.根据安装在流场上游和下游成60的两条光路,测量流场速度为1 205 m/s,结合壁面压力传感器,测量流场的质量流量为1 500.49 g/s,较真实值偏差为5.23%.TDLAS测量系统实现了对超声速气流多参数快速线测量.     

波长调制-TDLAS技术测量风洞中氧气流速方法研究

为了有效地测量风洞中的气体流速,以激光多普勒频移原理为基础,结合波长调制可调谐二极管激光吸收光谱(TDLAS)技术,利用HITRAN数据库,选取氧气(O2)分子在13144.5 cm-1附近的吸收谱线作为研究对象。在软件中建立了气体流速测量模型,模拟分析了流速测量结果;在实验室中利用超声风洞装置,建立了一套基于波长调制-TDLAS技术的流速测量系统,通过实验,提取出O2的二次谐波信号,根据O2分子吸收谱线的二次谐波信号的频移量反演风洞中的气流速度。实验结果表明,在实验室环境下,系统测量流速达到707.6 m/s,符合超声风洞的设计,测量误差范围为5.47%。实验结果为基于波长调制-TDLAS方法测量流速的小型化系统研制以及飞行实验进行了前期准备。     

采用可调谐LD测量CO浓度的方法研究

提出了一种利用TDLAS吸收光谱技术,通过测量一氧化碳吸收谱线的二次谐波和四次谐波的最大值,从而准确计算出一氧化碳浓度的新方法。这种方法的的特点在于,测量结果与激光器的调制强度无关。并且,测量的相对误差与半导体激光器的调制电流所引起的频率变化量的差异没有关系。结果表明,这种利用在吸收谱线上的特殊频点上的二次谐波和四次谐波的相对强度来计算气体浓度的方法,能够高效、实时和高精度地测量一氧化碳气体浓度。     

可调谐激光吸收光谱技术监测燃烧中CO检测方法比较

可调谐二极管激光吸收光谱(TDLAS)技术是利用二极管激光器的波长调谐特性,获得被选定的待测气体特征吸收谱线的吸收光谱,从而对待测气体进行定性或定量分析.TDLAS技术与开放式的多次反射池相结合,分别利用二次谐波探测方法和自平衡加波长调制的新型检测方法,测量了酒精喷灯火焰的CO浓度.测量结果表明,自平衡加波长调制的新型检测方法与二次谐波检测方法相比,不仅使检测限提高了16.3倍,还有效地消除了激光器、火焰的光强波动影响,可以应用在燃烧控制及喷焰气体CO浓度测量等多个领域.     

TDLAS技术气体检测二次谐波信号的仿真与分析

可调谐半导体激光吸收光谱(TDLAS)技术结合半导体激光器可调谐的特点及气体分子对特定波长能量光的吸收特性,凭借灵敏度高、响应时间短等优势广泛应用于气体浓度检测。TDLAS技术气体浓度检测包括波长调制、气体吸收、二次谐波解调等环节,吸收信号的二次谐波分量携带气体浓度信息,用于计算气体浓度。利用MATLAB对气体检测过程进行了信号仿真,并利用数字锁相放大算法提取了二次谐波信号,验证了二次谐波与气体浓度的关系。通过仿真分析了二次谐波信号随调制系数的变化关系,以便确定较佳的调制参数,为后续系统搭建与气体检测实验提供参考。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.