分子束延GaAs1—xSbx／GaAs及界面失配研究

本文以开发长波长半导体光电子材料为目的，对ＧａＡｓ１－ｘＳｂｘ／ＧａＡｓ这一大失配质结材料开展了较为深入的研究，利用国产ＭＢＥＩＩＩ型设备外延生长了全组分的ＧａＡｓ１－ｘＳｂｘ材料，化学热力学数据分析表明Ｓｂ结合到ＧａＡｓＳｂ中的速率比Ａｓ高得多，实验表明，合金组分可由Ｓｂ／Ｇａ束流比控制，也发现Ｓｂ束流的支配使用随温度升高而降低，利用ＴＥＭ和ＲＢＳ技术研究了异质结界面及外延层的晶体质量，实验表明     

SiC 半导体材料与器件（1）

本文介绍了半导体ＳｉＣ材料的结构和特性、材料制备及器件研制的进展，并与Ｓｉ、ＧａＡｓ、金刚石等材料作了比较，强调指出ＳｉＣ做为一种接近实用的高温、高频、高功率和抗辐射器件材料的优越性，同时亦指出ＳｉＣ器件进一步实用化所需解决的问题及应用前景。     

今日SiC电子学

ＳｉＣ是近几年迅速发展的一种半导体材料,在微波功率器件、功率电子开关器件、高温工作器件等方面比Ｓｉ和ＧａＡｓ具有更大的优势。本文介绍了ＳｉＣ材料特性、材料制备及目前器件研制水平。     

SiC半导体材料与器件

阐述了ＳｉＣ材料的结构和性质，系统介绍了相关制备、器件制作的进展，并将ＳｉＣ与Ｓｉ，ＧａＡｓ、金刚石等材料作了比较，强调了ＳｉＣ做为一种接近实用的功率器件材料的优越性，同时指出了为进一步实用化所需解决的问题。     

今日SiC电子学

ＳｉＣ是近几年迅速发展的一种半导体材料,在微波功率器件、功率电子开关器件、高温工作器件等方面比Ｓｉ和ＧａＡｓ具更大的优势。本文介绍了ＳｉＣ材料特性、材料制备及目前器件研制水平。     

GaAs／Si衬底电路制备中Ge元素分布的研究

Ｓｉ衬底上外延ＧａＡｓ材料是微电子学研究的重要课题之一，本文介绍了以大直径的ＧａＡｓ／Ｓｉ材料取代ＧａＡｓ衬底的工艺技术，对Ｇｅ元素在ＧａＡｓ／Ｓｉ集成电路中的分布影响进行了俄联电子能谱分析研究，并确定了该技术在大规模集成电路中的应用价值。     

GeSi材料及其在数据转换器中的应用

ＧｅＳｉ材料是继Ｓｉ和ＧａＡｓ之后出现的一种性能优良的半导体材料。文章综合评述了ＧｅＳｉ材料生长技术的发展、基本特性以及ＧｅＳｉ器件的研究状况，给出了ＧｅＳｉ材料在数据转换器方面的应用成果。     

基于定量原子像图像分析的InSb／GaAs半导体界面原子结构模型

基于定量原子像图像分析的ＩｎＳｂ／ＧａＡｓ半导体界面原子结构模型王绍青，孟祥敏，谢天生，褚一鸣（中科院金属所固体原子像实验室，沈阳１１００１５）（中科院北京电子显微镜实验室，北京１０００８０）由于ＩｎＳｂ／ＧａＡｓ半导体材料在半导体器件研制与生产中的...     

分子束外延GaAs_（1－x）Sb_x／GaAs及界面失配研究

本文以开发长波长半导体光电子材料为目的，对ＧａＡｓ１－ｘＳｂｘ／ＧａＡｓ这一大失配异质结材料开展了较为深人的研究，利用国产ＭＢＥＩＩＩ型设备外延生长了全组分的ＧａＡｓ１－ｘＳｂｘ材料，化学热力学数据分析表明，Ｓｂ结合到ＧａＡｓｓｂ中的速率比Ａｓ高得多，实验表明，合金组分可由Ｓｂ／Ｇａ束流比控制，也发现Ｓｂ束流的支配作用随温度升高而降低．利用ＴＥＭ和ＲＢＳ技术研究了异质结界面及外延层的晶体质量，实验表明采用组分阶变的过渡层有效地抑制了界面位错向体层的延伸，可以获得较高晶体质量的外延层．     

半导体长波长异质结构材料光压谱测试探讨

本文介绍了ＩｎＰ、ＩｎＧａＡｓ、ＩｎＧａＰ、ＩｎＧａＡｓＰ等的光压港（ＰＶＳ）。并把ＩｎＧａＡｓＰ（在特定组份下）的ＰＶＳ与ＦＦＴ—ＰＬ谱进行了比较；分析和讨论了ＰＶＳ测试的局限性和复杂性；指出了对多层异质结构材料，只有把器件结构、外延工艺、ＥＣＶ测试等结合起来，才可能正确地理解ＰＶＳ给出的测试结果。     

Sidewall spacer defined resonant interband tunneling diodes

We report on a contacting and fabrication scheme for a sub-500 nm InAs/AlSb/GaSb resonant interband tunneling diode (RITD) without using any fine-line lithography. Epitaxial regrowth on patterned substrates combined with sidewall spacer technology is used to define the device dimensions. During regrowth, the crystal facet termination obtained by choosing the appropriate orientation for the device is utilized to make electrical contact to the device in the desired directions and to isolate the device in all other directions. The concept, fabrication process, current-voltage characteristics of the device, and a comparison with RITDs fabricated in a conventional manner are reported.     

InAs/GaSb II型超晶格红外探测器的研究进展

InAs/GaSb Ⅱ型超晶格材料理论上性能优于HgCdTe、InSb等红外探测材料,基于成熟的Ⅲ-V族化合物材料与器件工艺,使得Ⅱ型超晶格材料容易满足均匀大面阵、双色或多色集成等红外探测器的要求,因而InAs/GaSb Ⅱ型超晶格材料将逐步替代HgCdTe、InSb等材料成为第三代红外探测器的首选材料。本文阐述了InAs/GaSb超晶格红外探测器的基本原理、以及材料生长和器件结构,并对其研究进展进行了综述性介绍。     

InAs/GaSb台面结型器件制备工艺技术研究

随着红外探测技术的不断进步,第三代红外探测器的发展需求日渐明晰。由于带间跃迁工作原理、暗电流抑制效应以及成熟的材料制备技术基础等因素,InAs/GaSb超晶格材料已经成为了第三代红外焦平面探测器的首选制备材料。基于InAs/GaSb超晶格材料的台面结型焦平面器件制备方法主要包括湿法腐蚀技术、干法刻蚀技术以及干湿法结合技术。从文献调研结果来看,湿法腐蚀技术和干法刻蚀技术各有优缺点。湿法腐蚀技术适用于单元以及少像元面阵的制备,其中磷酸系腐蚀液的腐蚀效果最佳;干法刻蚀技术适用于大面阵、小尺寸焦平面阵列的制备,几种氯基刻蚀气体体系以及氯基与甲烷基组合的刻蚀气体体系都表现出了不错的刻蚀效果;干湿法结合技术在干法刻蚀后引入湿法腐蚀工艺以进一步消除刻蚀损伤,从而提高器件性能。对以上三种技术方案进行了介绍和分析。     

A simple single-step diffusion and emitter etching process for high-efficiency gallium-antimonide thermophotovoltaic devices

A single-step diffusion followed by precise etching of the diffused layer has been developed to obtain a diffusion profile appropriate for high-efficiency GaSb thermophotovoltaic (TPV) cells. The junction depth was controlled through monitoring of light current-voltage (I–V) curves (photovoltaic response) during the post-diffusion emitter-etching process. The measured photoresponses (prior to device fabrication) have been correlated with the quantum efficiencies (QEs) and the open-circuit voltages in the fabricated devices. An optimum junction depth for obtaining the highest QE and open-circuit voltage is presented based on diffusion lengths (or minority carrier lifetimes), carrier mobility, and the typical diffused impurity profile in GaSb.     

GaSb: A New Alternative Substrate for Epitaxial Growth of HgCdTe

In this work, GaSb is proposed as a new alternative substrate for the growth of HgCdTe via molecular beam epitaxy (MBE). Due to the smaller mismatch in both lattice constant and coefficient of thermal expansion between GaSb and HgCdTe, GaSb presents a better alternative substrate for the epitaxial growth of HgCdTe, in comparison to alternative substrates such as Si, Ge, and GaAs. In our recent efforts, a CdTe buffer layer technology has been developed on GaSb substrates via MBE. By optimizing the growth conditions (mainly growth temperature and VI/II flux ratio), CdTe buffer layers have been grown on GaSb substrates with material quality comparable to, and slightly better than, CdTe buffer layers grown on GaAs substrates, which is one of the state-of-the-art alternative substrates used in growing HgCdTe for the fabrication of mid-wave infrared detectors. The results presented in this paper indicate the great potential of GaSb to become the next generation alternative substrate for HgCdTe infrared detectors, demonstrating MBE-grown CdTe buffer layers with rocking curve (double crystal x-ray diffraction) full width at half maximum of ～60 arcsec and etch pit density of ～10⁶ cm^?2.     

Oxide removal from the GaSb surface and fabrication of MBE GaSb photodiodes and Au–GaSb schottky diodes

Oxide removal from GaSb surfaces by several wet chemical treatments and subsequent thermal annealing was investigated. Preferable wet chemical treatments by which surface oxides could be removed effectively at room temperature were evaluated in the experiments. This method can be effectively applied to fabrication processing of MBE GaSb photodoides and Au–GaSb Schottky doides. Low-reverse-leakage GaSb photodiodes and near ideal Au–GaSb Schottky diodes were thus obtianed.     

Gas-fired thermophotovoltaic generator based on metallic emitters and GaSb cells

A prototype compact TPV generator with a propane burner (pressure 2 bar) and a metallic netted emitter has been developed and tested. A photovoltaic generator unit with 24 (1 × 1 cm²) GaSb cells has been fabricated. The fabrication technology of photovoltaic cells has been optimized. It is shown that the data obtained can be used to select the starting bulk material for fabrication of photovoltaic cells with similar output parameters. It has been experimentally demonstrated that, to achieve maximum efficiency, it is necessary, in addition to using photovoltaic cells with similar characteristics, to provide identical conditions of their operation (temperature, illuminance).     

New wet etching solution molar ratio for processing T2SLs InAs/GaSb nBn MWIR infrared detectors grown on GaSb substrates

Mid-wave infrared (MWIR) technology is dominated by HgCdTe. However, in terms of performance, InAs/GaSb type-II superlattice (T2SL) has shown the theoretical potential to compete with HgCdTe. T2SLs InAs/GaSb technology is under development, where proper detector’s architecture formation must be considered as one of the most important steps of the fabrication process. The paper presents experimental results related to chemical etching of the T2SLs InAs/GaSb with bulk AlGaSb barriers, mesa type nBn MWIR detectors. Although, we attempted to transfer HgCdTe etching solutions: Br₂+C₂H₆O₂ into T2SLs InAs/GaSb technology, H₃PO₄+C₂H₈O₇+H₂O₂+H₂O (molar ratio: 1:1:4:16) at temperature ~21 °C was estimated to have optimal parameters in terms of the mesa profile and current–voltage characteristics. Repeatability of the mesa profiles and surface uniformity was reached. Overetching close to the mesa sidewalls was not observed.     

背照式电荷耦合器件的研制

简要介绍了背照电荷耦合器件的工作原理、潜在优势和应用领域.设计了对常规电荷耦合器件芯片进行衬底减薄进而实现背照电荷耦合器件的技术方案.给出了相关的设计方法和工艺流程并对关键工艺技术进行了探讨.对所制成的背照电荷耦合器件组件的性能进行了分析和讨论.结果表明所提出并采用的技术方案是可行的.