广播发射台天线区调配室无线监测及防盗系统设计

为了实现对距离广播发射台较远的天线区设备进行远程监测和看护,本文利用多种无线传感器、GSM/GPRS网络、INTERNET网构建了天线区调配室的远程监测及防盗系统。该系统通过GSM短消息的方式向发射台值班人员发送报警信息,通过GPRS通信方式向发射台机房监控平台发送报警数据和执行远程监控。     

基于GSM模块的远程控制和报警系统

介绍了一种基于GSM/GPRS网络的无线远程控制和报警系统,详细阐述了系统的组成结构和软硬件设计。该系统采用GSM/GPRS模块发送接收短消息和彩信,从而实现对家居安全状况的远程监控。选用多种传感器采集家居信息,通过无线收发模块传递到主控制器,运用信息融合技术,获得可靠的报警信息。业主接到报警信息后,回复短信可以控制和处理现场情况,达到保证家居安全和防盗的目的。     

智能家庭监控报警系统的设计

设计了智能家庭监控报警系统以实现对家居安全的实时监控。系统采用了单片机技术、WIFI、蓝牙和GSM/GPRS网络进行设计,能够通过手机接受报警信息和远程指令;同时引入多种传感器和继电器实现了对家中基本情况、安全隐患等的远程控制。实验结果表明,所设计的系统能够实现安全、便捷的智能家居远程监控,具有较高的可用性和可靠性。     

基于GPRS/3G的远程通信实验系统组网方案实现

针对远程通信实验对于系统组网的要求,提出了一种基于GPRS/3G技术的系统组网方案。系统设有多个外置的GSM模块,中心和远程设备通过串口控制各自的模块,以实现网络连接和SMS通信,传递实验数据和各设备定位信息。对方案中GSM模块、GPS模块及其附属电路、GPRS网络连接和短消息编码方式等关键技术进行了介绍,并给出了软件流程图和VC实现的部分代码。     

基于Linux系统和ZigBee的智能家居系统

根据现代家居的发展需求,提出了一种智能家居系统的整体设计方案,以ARM11S3C6410为核心处理器,Linux嵌入式系统为家居总中心监控系统,使用Linux Qt完成了控制程序及人机界面的编写,采用GPRS通信技术完成了系统的远程通信及监控,组建基于ZigBee无线通信技术的系统内部网络,并完成了对家电的基于统一协议的控制,实现了家居的智能化。     

智能家居系统的应用研究

随着物联网技术不断深入研究,智能家居产品正日益开发且应用。目前较多的智能家居产品功能较单一,如单一的安防报警系统、厨房信息检测系统等。智能家居系统应包含有家电智能化、安防智能化、厨房及家居信息网络化等方面,且数据应和远程上位机通信使得住户可远程遥控家居设备。未来家居系统会走进普通百姓家庭中,使得人居生活舒适、安全、可控等。本文设计了基于CC2530节点的信息检测及家电控制终端,通过对ZigBee技术的组网研究,完成了系统MESH网络组建,且所有信息送Android智能平台。在平台上可控制所有终端节点的工作,同时平台通过WIFI或移动通信网络与远程上位机平台进行通信,实现远程遥控及监测功能。     

基于Linux的家居无线安防监控系统的设计与实现

针对传统家居安防系统存在布线困难、建设及维护费用高、接收报警信息不及时等不足,提出一种基于GPRS和Linux的家居远程安防监控系统的设计方案。系统采用低功耗的MSP430单片机构成底层传感节点,高性能嵌入式ARM9处理器S3C2440A构成系统控制平台,构成以系统控制平台为核心的星型无线传感器网络。移植了实时性强、可扩展性好的嵌入式Linux操作系统,利用GPRS实现远程通信,采用SQL Lite数据库进行数据管理。实验测试表明,该系统具有实时性强、可扩展性好和报警成功率高的优点,能满足家居信息采集、远程报警和实时监控的要求。     

基于Xscale-Linux的GPRS/GSM移动终端及GUI设计

采用目前成熟的GPRS/GSM通信技术,结合ARM嵌入式软硬件平台以及嵌入式Linux操作系统实现实时数据的无线远程监控终端。详细讨论了GPRS/GSM无线模块MC39i支持的AT命令协议与协议数据单元(PDU)的编解码过程,提供了MC39i模块与终端设备连接的串口模块在Linux下的实现方法。重点阐述了如何在Linux中建立QT/Embedded的开发环境和应用程序的移植以及如何在移动终端中予以实现,实践效果良好。     

基于FTP协议栈的OpenAt应用软件远程DOTA系统

OpenAt是一款基于GSM/GPRS无线CPU模块的嵌入式操作系统。OpenAt系统集成了基于GSM/GPRS无线CPU模块的大部分应用开发API函数库。DOTA是指系统远程无线升级功能。文章以Q2686无线CPU为模块为例,介绍OpenAt操作系统平台上的基于FTP的远程DOTA软件设计,为GSM/GPRS产品应用提供一种远程在线升级手段。     

BENQ-M23 GSM/GPRS模块在远程智能家居控制中的应用

针对智能家居的应用场合,提出采用BENQ公司的M23模块,借助SMS平台实现远程控制,详细介绍了M23GSM/GPRS通信模块的性能特点,电源与通信电路设计及调试方法,并分析了M23模块在远程智能家居控制应用中的软件设计方法。综合调试与实验结果表明,利用上述方法构建的远程智能家居控制系统工作稳定可靠,实用性强,对于其他需要应用M23模块的系统也有很好的参考价值。 更多还原     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.