工信部将推基于云计算的电子政务平台

<正>工业和信息化部日前印发了《基于云计算的电子政务公共平台顶层设计指南》(以下简称《设计指南》),旨在充分发挥既有资源作用和新一代信息技术潜能,开展基于云计算的电子政务公共平台顶层设计,继续深化电子政务应用,全面提升电子政务服务能力和水平。     

基于云计算的电子政务公共平台的功能和性能要求

基于云计算的电子政务公共平台是下一代信息化基础设施的重要组成部分,也是电子政务服务的支撑平台。为使组建的基于云计算的电子政务公共平台更好地满足政务部门的需要,需要规范基于云计算的电子政务公共平台的功能和性能。本文介绍了基于云计算的电子政务公共平台的功能和性能要求。     

基于云计算的电子政务公共平台顶层设计的研究与探索

介绍了基于云计算的电子政务公共平台(简称电子政务公共平台)的背景和概念,以及电子政务公共平台顶层设计的目的、方向、目标、原则、内容及重点等。     

基于云计算技术的电子政务平台的设计

目前,云计算技术已发展成熟,在电子行业中引入云计算技术已不是新鲜事,云计算技术在信息时代的发展中日渐显露出它的重要地位,而将云计算技术引入电子政务公共平台中也是未来的发展趋势。本文在分析云计算技术应用电子政务平台的意义和系统构建的基础上深入探讨基于云计算技术的电子政务平台的设计。     

对发展云计算电子政务的一些建议和思考

信息技术的发展使得政府重点关注如何运用现代信息技术提高执政效率,为民服务。电子政务就是政府运用现代信息技术实现其管理及服务职能的重要手段,云计算是现代化信息技术发展到一定阶段的产物。云计算技术的发展使得研究云计算在电子政务领域的应用变得至关重要。本文是基于云计算电子政务应用的研究与探索,针对目前电子政务发展现状与出现的问题,为电子政务的发展方向提出积极的建议与思考。     

基于云计算的电子政务公共平台:安全风险与应对策略

云计算技术推动并加快了电子政务公共平台的创新和发展,但同时也带来了数据丢失与泄露、共享技术漏洞、不安全的应用程序接口等全新的安全风险。本文从基于云计算的电子政务公共平台自身的软硬件以及运维管理的角度出发,分析相应的风险与威胁,并提出公共平台安全体系框架以及风险应对策略。     

工信部确定首批基于云计算的电子政务公共平台建设和应用试点示范地区名单

正2013年9月,工业和信息化部经研究确定北京市等18个省级地方和北京市海淀区等59个市(县、区)作为首批基于云计算的电子政务公共平台建设和应用试点示范地区,鼓励地方在现有基础上建设集中统一的区域性电子政务云平台,支撑各部门业务应用发展,防止重复建设和投资浪费,促进互联互通和信息共享,增强电子政务安全保障能力,推动电子     

基于云计算的电子政务平台设计

随着我国政府职能向公共服务型政府的转变,国家对民生问题的重视日益加强,电子政务平台是一个重要的着力点,随着电子政务平台建设的不断推进,云计算的运用也得到了普及,文章主要介绍了基于云计算的电子政务平台设计。     

云计算平台下电子政务基础设施的应用

针对我国电子政务基础设施的发展现状及存在的问题,分析了电子政务发展对云计算平台的需求,提出了云计算在政务系统支撑平台和安全管控桌面两个方向的应用方案,并以广州市某区电子政务云计算平台为例,介绍了云平台在电子政务中的应用。通过云计算可以很好地解决当前电子政务发展过程中遇到的管理运维问题,并在高可靠、高可用和节能减排等方面较传统模式有所突破。     

基于云计算的电子政务公共平台建设研究

伴随着我国进入智慧政府建设阶段,政府信息化建设模式也从政府主导转向满足公众需求为核心点的需求导向、问题导向的全新模式。新形势下政府云平台的建设更好地整合硬件和服务资源,并实现资源的高效调度与公众需求最大化契合。文章通过对云计算相关概念的阐述,以"创新、协调、绿色、开放、共享"理念为基础,剖析出基于云计算的电子政务公共平台建设的意义,探索基于云计算电子政务公共平台建设的对策。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.