新型星载超宽带微波光子变频技术

传统的星载变频通道存在易受电磁干扰、动态范围受限、带宽瓶颈等不足,将微波光子技术引入卫星通信系统中,可克服电域信号变频的局限性,提升星载变频通道的性能。文章提出了一种基于并联马赫-增德尔调制器(MZM)与相干接收的宽带微波光子变频技术,通过采用相干接收方法,能够实现较好的共模噪声抑制,并降低谐波失真的影响,同时结合抑制载波调制方式所带来的优势,有效改善了变频无杂散动态范围等指标。通过实验验证,其杂散抑制比优于60 dB,无杂散动态范围优于100 dB·Hz2/3,为新型星载微波光子变频方案设计、实际应用提供了必要的理论依据与技术支撑。     

星上微波信号光学调制偏置点优化理论及仿真研究

研究了基于双电极马赫曾德尔干涉仪(DE-MZM)的星上微波信号光学调制方法,获得了单频段微波信号输入时的调制器输出光场表达式,推导了载噪比、射频增益、噪声系数及无杂散动态范围四个参数的解析表达式,建立了星上微波光子链路传输方程。利用OptiSystem仿真软件,搭建了单频段微波信号输入时的星上微波光子链路仿真系统,对链路性能进行了仿真研究。研究结果表明,调制器直流偏置点在正交点时,射频信号增益最高;直流偏置点在低偏置点时,载噪比、噪声系数和无杂散动态范围三个性能指标最优。     

超宽带毫米波接收前端设计

针对传统超宽带射频前端组合杂波干扰过多和体积过大的问题,提出了将射频前端通过采用毫米波二次变频的设计方案,使得输入中频和输出射频之间的频率间隔加大,削弱了混频导致的频率组合、杂散和本振反向辐射等干扰。通过对器件功率及电平的合理配置,实现了低噪声、宽频带、大动态的输出,在大于4 GHz的接收频段内,其噪声系数小于3.6 dB,动态范围大于55 dBm。该接收前端还具备低成本、结构紧凑、重量轻等特点,可广泛应用于电子对抗、宽带侦察接收系统。     

宽带大动态射频光传输技术

宽带大动态的射频光传输链路是微波光子技术应用的基础。针对射频光传输对链路高动态范围的应用需求,分别介绍了多频点副载波复用数字预失真和多源非线性数字后补偿两种失真线性化技术的原理及其研究进展,这两种方法能较好地抑制信道间的交调失真和信道内的三阶交调失真。同时,将全光下变频技术引入到接收链路中,通过充分利用相位调制线性特性的优势,分析了基于相位调制及相干解调DSP处理的大动态光载射频传输系统,实验得到的宽带射频信号光传输系统的无杂散动态范围达到了128.8 dB.Hz2/3。     

基于并联DPMZM的大动态范围微波光子混频系统

为了解决微波光子混频系统的非线性失真和动态范围受限问题,提出了一种基于并联双平行马赫-曾德尔调制器(DPMZM)的大动态范围微波光子混频系统。利用DPMZM实现射频和本振信号的并行调制,通过配置并行两路的电光调制指数及调制器的工作点,抵消输出中频信号中的三阶交调失真(IMD3),最终提高系统的动态范围。仿真结果表明,所提方案可将IMD3抑制17.7 dB,系统无杂散动态范围提高到127.8 dB·Hz 4/5。     

幅相一致低杂散多通道上变频器设计

介绍了一种幅相一致、低杂散多通道上变频器的电路组成及混频、滤波及增益控制等关键电路的设计。论述了杂散的产生及抑制,对影响幅度一致性和相位一致性的因素进行了分析,并提出了控制多路上变频器的幅度一致性、相位一致性的方法。该多通道上变频器的幅度一致性优于1dB,相位一致性优于6°,带内杂散优于-60dBc,带外杂散优于-45dBc。     

宽带大动态微波光子混合链路的优化研究

典型的微波光子混合链路包含微波前端、纯光链路和后置微波放大,其动态范围、噪声系数等性能受到这三个环节的共同制约.首先建立了纯光链路的理论模型,并分析了其参数优化方法;然后将纯光链路在混合链路中等效为微波模型,利用微波级联理论分析了微波前端和后置微波放大的增益和三阶截交点对混合链路的动态范围、噪声系数的影响规律,进而得到微波光子混合链路的优化方法.     

基于微波光子技术的一体化射频前端

针对传统射频前端技术中电子器件在频率、带宽方面受限的问题,研究了基于微波光子技术的射频前端。介绍了微波光子技术在宽带、低损和灵活等方面的优势,分析了光学辅助本振产生、多频变换以及微波光子交叉连接等技术,提出了一种基于微波光子技术的一体化射频前端。这种新型的前端架构具有高频宽带、灵活可重构的特点,适应不同的射频体制,并且能够有效降低系统的体积、重量和功耗。     

应用于软件无线电中的宽频带LNA的设计研究

文章描述了一种可应用于软件无线电接收机的射频(RF)前端,频率范围在800MHz到2GHz,特征频率为96GHz的宽带低噪声放大器(LNA)的设计。该设计采用微带线和微波晶体管器件,并使用MATLAB进行了仿真,结果表明其功率增益可达10dB,噪声系数(NF)在0.5dB以下。     

面向电子战射频光传输的宽带射频信号杂散产生机理及优化方法

针对电子战系统的宽带射频信号波分复用传输,通过理论分析给出了微波光子链路中各关键参量对杂散信号的影响规律,提出了非均匀信道间隔分配的除杂优化方法。该方法通过微调各通道的波长,使四波混频产生的杂散频率超过电子战接收机带宽,从而降低杂散对系统的影响。该方案实现简单,且无需改变现有电子战系统架构,具有较好的工程实现性。实验结果表明:与等波长间隔相比,5通道非均匀波分复用信号传输1 km时,在接收机带宽内四波混频引起的杂散得到了显著优化,动态范围提升了26 dB以上。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its