基于飞秒激光直写的高折射率光纤光栅传感器

该文提出了一种基于飞秒激光直写的高灵敏度光纤光栅折射率传感器,同时测量了传感器的温度及轴向应变特性。采用波长为800 nm的飞秒激光刻写了周期为150μm,周期数为50,栅区长度为7.5 mm的长周期光栅。该传感器在折射率测量实验中的灵敏度最高可达1 605 nm/RIU,在30～330℃,温度灵敏度达到76.52 nm/℃,传感器的稳定性良好且对应变不敏感,鲁棒性优良。这种基于飞秒激光直写的长周期光纤光栅,其折射率灵敏度较高,耐高温,具有广泛的应用前景。     

采用液体腔的全光纤Fabry-Perot结构温度传感特性研究

提出并设计了一种基于液体腔结构的全光纤Fabry-Perot(F-P)传感器,对F-P传感器原理进行了研究。采用内径为0.3 mm的玻璃毛细管作为套管,将两根SMF-28单模光纤插入套管构成F-P结构,并通过在腔内填充液体进一步提高传感器的灵敏度。实验中,以空气及纯净水作为腔内介质,分别制备了光纤端面距离为119μm和123μm,反射谱周期以及条纹对比度分别为15.15 nm、14.13 nm和11.17 dBm、11.83 dBm。实验中对所制备的两种F-P传感器分别进行了温度特性的测试,在20℃的范围内,每间隔2℃对反射光谱进行采集。对于空气腔结构F-P传感器,随着温度逐渐升高,波长发生红移,特征波谷波长漂移量为2.39 nm,温度灵敏度为121 pm/℃,线性度为0.94,最大功率漂移为1.17 dBm;对于液体腔结构F-P传感器,随着温度逐渐升高,波长发生红移,特征波谷漂移量为5.31 nm,温度灵敏度为243 pm/℃,线性度为0.98,最大功率漂移量为4.07 dBm。     

基于逐点法刻写的偏芯光纤布拉格光栅应变和温度传感研究

为解决当前光纤光栅制备灵活性较低,以及测量 中不利于实现分布式波分复用的问题,提出了一 种于基于逐点法刻写的偏芯光纤布拉格光栅传感器(eccentric fiber Bragg grating,EFBG)。采用飞秒激光(femtosecond laser,FSL)逐 点刻写技术,光栅刻写位置垂直偏离光纤中心3 μm,光栅长度为5 mm,光栅中心波长为1 633 nm。不 同于传统光纤光栅,偏芯结构的光栅可以激发出较宽的包层模共振范围,通过分析包层模共 振峰的波长 漂移量,表征施加的应变大小或温度高低。实验结果表明,应变测量范围在0—5 00 με时,包层模灵敏度为 0.98 pm/με,温度测量范围在30—80 ℃时, 包层模灵敏度为10.89 pm/℃,并且包层模灵敏度相比芯模灵敏 度数值相差较小,从而可以实现应变或温度的传感测量。     

一种新型微结构高灵敏度光纤温度传感器

为实现高精度温度检测,提出一种基于飞秒激光微加工的新型光纤温度传感器的制备方法。利用波长为780nm的飞秒激光脉冲在刻写有光纤布拉格光栅(FBG)的单模光纤(SMF)包层上加工槽状微结构,通过磁控溅射的方法在其表面沉积温敏薄膜,从而制备一种光纤温度传感探头。理论分析了环状微结构镀膜实现温度增敏的工作机制,通过温度实验讨论了不同微结构镀膜对温度增敏效果的影响。实验结果表明,在FBG包层上单纯加工槽状微结构(无镀膜),对温度的灵敏度影响不大,基本上不改变光栅中心波长随温度变化的趋势;加工槽状微结构后再沉积敏感薄膜,可明显提升传感器的温度灵敏度,其中环状膜层较镀膜螺纹膜层微结构的增敏效果更加明显,其灵敏度可达21.37pm/℃。     

采用化学腐蚀法制备光纤Fabry-Perot应变传感器

提出了一种采用化学腐蚀方法制备光纤Fabry-Perot(F-P)传感器的方法,采用浓度为40%的氢氟酸溶液对单模光纤端面进行腐蚀处理,并通过电弧放电对光纤端面进行熔接,制作光纤F-P传感器。实验中,将单模光纤端面在40%浓度的氢氟酸中腐蚀20 min制作出深度21 μm的凹槽,并将该腐蚀过的光纤和端面切平的单模光纤相对熔接,通过电弧放电进行熔接构成F-P腔结构,条纹对比度为8 dB;对制备的光纤F-P传感器的应变特性及温度特性进行了实验和分析,结果表明采用化学腐蚀法制作的光纤F-P传感器对应变具有良好的灵敏度,加载灵敏度可达到3.78 pm/με,线性度为0.999;卸载灵敏度为-4.25 pm/με,线性度为0.985。     

基于光纤内双开口F-P干涉腔的折射率传感器

为了实现高灵敏度液体折射率传感器的高效制备,采用飞秒激光直写技术,在光纤末端刻蚀出矩形凹槽,辅以光纤熔接方法,制备出一种基于光纤内双开口法布里-珀罗(F-P)干涉腔的折射率传感器。该传感器的液体折射率传感灵敏度达到1107.76nm/RIU。讨论了温度对该传感器性能的影响,温度串扰小于0.0025nm/℃;基于海水含盐浓度与折射率的线性关系,探讨了该传感器在海水含盐浓度传感测量方面的应用,灵敏度为0.171nm/(mgmL-1)。结果表明,基于光纤内双开口F-P干涉腔的折射率传感器具有干涉谱对比度高、线性响应良好、灵敏度高、不易受温度串扰、结构紧凑、制备简单高效等优点,在生物、医疗、化学、环境等领域中有着广泛的应用前景。     

基于飞秒激光制备的光纤Fabry-Perot折射率传感器

在对光纤Fabry-Perot(F-P)传感器多光束干 涉原理仿真分析的基础上,利用波长为800nm的飞秒 激光脉冲在普通单模光纤(SMF)上制备微型传感器,并对其折射率响应性能进行了实验测试 。理论分析表明,在低、高折射率区域,F-P传感器的反射谱对比度随着折射率的增加分别 呈现先降低后增加的趋势(折射率高低分界点1．457)。飞秒激光 的制备方法通过计算机控制腔长等可以进行参数可选择的微型光纤F-P传感器的制作。利用 制备的传感器对一系列不同折 射率的溶液进行了折射率响应测试实验,测试结果表明,传感器反射谱对比度对低折射率物 质(折射率小于 1.457)的灵敏度为27.65dB/RI,对高折射 率 物质(折射率大于1.457)的灵敏度为3.50dB /RI,且均具有良好的线性响应。     

基于飞秒激光直写F-P腔的位移与应力传感特性研究北大核心CSCD

设计了一款基于飞秒激光直写的法布里-珀罗(Fabry-Perot,F-P)干涉型光纤传感器,实现了位移与外部应变双参数的测量,研究了该传感器的实现原理,并进行实验验证。首先用飞秒脉冲激光在标准单模光纤(single mode fiber,SMF)的纤芯的纵向上刻两道长度为48μm的线,两线间的距离为105μm,形成一个F-P谐振腔,将该结构的其中一端切平,与一个全反镜共同形成一个复合的干涉仪,从而构成位移传感器;再将切平的那一端打结,又可以进行应力的测量。实验结果表明,该结构在Dip1位置的位移灵敏度为-440.3 pm/μm,线性拟合系数为0.9903;该结构打结后,可以测得Dip2位置的应变灵敏度为1.2 pm/με,线性拟合系数为0.9924。传感器制作简单,成本低,结构微小,线性度良好,容易重复。该传感器在位移传感和应变传感领域中均具有一定的实用价值。     

化学腐蚀法制备的光纤Fabry-Perot位移传感器

提出了一种采用化学腐蚀方法制备光纤Fabry-Perot(F-P)位移传感器的方法。采用浓度为40%的氢氟酸溶液腐蚀处理单模光纤端面,通过电弧放电对光纤端面进行熔接,制作光纤F-P传感器,并通过改变传感腔尾纤的粗糙度对其进行优化。实验中,将制备好的F-P腔结构的尾纤端面做未切平和切平处理,得到的条纹对比度分别为16和8dB。分别对两种情况的光纤F-P传感器的位移特性进行了实验和分析,结果表明:采用化学腐蚀法制作的光纤F-P传感器对位移具有良好的灵敏度和线性拟合优度,尾纤端未切平的F-P的线性拟合优度更好,测量精确度更高,灵敏度可达到0.010 0nm/μm,线性拟合优度为0.999 3。     

飞秒激光制备的全单模光纤法布里-珀罗干涉高温传感器

提出了一种全单模光纤的本征型法布里-珀罗干涉(IFPI)高温传感器。光纤IFPI传感器由飞秒激光在标准单模光纤上刻写的一对内部反射镜和腔内光纤构成,其反射光谱的干涉条纹对比度达到10dB,而插入损耗仅为0.1dB。实验结果表明,该传感器的测量温度可达1000℃,温度灵敏度为14.9pm/℃。而且在重复测量中,反射光谱具有良好的一致性,可以准确地实现高温传感。飞秒激光制备的光纤IFPI高温传感器完全由标准单模光纤构成,结构简单、成本低廉,易于连接现有的光纤器件构成光纤传感网络,在实际工程中有较大的应用价值。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.