一种新型电子束曝光文件格式设计及其应用

提出一种新型的电子束曝光数据格式，引入了面向对象的设计和适应于矢量型电子束扫描方式的设计，提高了对通用图形数据格式转换的精确度和效率，同时更便于对电子束曝光机的曝光控制。该设计已在电工所的科研项目“纳米级电子束曝光系统”中得到应用，被称之为EDF数据格式。     

掩模图形切割方式对曝光时间的影响研究

掩模生产过程中,数据处理为至关重要的一环,利用专用数据处理软件,将客户设计的图形数据进行图形分割后转换成满足不同曝光机台的数据格式。通过调整数据处理软件的相关参数来研究对激光束曝光机、电子束曝光机曝光数据图形切割方式(fracture)的影响。通过实验数据确认图形切割方式的改变对两种曝光机台曝光时间的影响,最后通过合理优化参数值,在保证图形稳定性的同时,缩短曝光机台曝光时间,达到提升生产效率的目的。     

基于DSP新型图形发生器模数转换器的设计

介绍了一种电子束曝光机图形发生器模数转换器的设计方案，该设计方案以ADI公司的模数转换芯片AD9223为核心，根据电子束曝光机背散射信号的特点，设计了合理的前端放大器和驱动电路及基准源。这样，提供了与DSP的无缝接口并提高了转换速度。该模数转换器可用于电子束和离子束曝光机中的图形发生器采集标记数据和图像数据信息，同时也可用于原子力显微镜采集图像数据信息。     

纳米级电子束曝光机用图形发生器

为满足纳米级电子束曝光系统的要求，设计了高速图形发生器。该图形发生器包括硬件和软件两部分。硬件方面主要是利用高性能数字信号处理器(DSP)将要曝光的单元图形拆分成线条和点，然后通过优化设计的数模转换电路，将数字量转化成高精度的模拟量，驱动扫描电镜的偏转器，实现电子束的扫描。通过图形发生器还可以对标准样片进行图像采集以及扫描场的校正。配合精密定位的工件台和激光干涉仪，还可以实现曝光场的拼接和套刻。利用配套软件可以新建或导入通用格式的曝光图形，进行曝光参数设置、图形修正、图形分割、临近效应修正等工作，完成曝光图形的准备。结果表明，该图形发生器能够与整个纳米级电子束曝光系统协调工作，刻画出纳米级的图形。     

电子束曝光数据格式的改进设计与实现

根据中国科学院电工研究所研制的DY-2000型实用化电子束曝光系统对曝光图形数据格式的要求及用户的需要,对原曝光文件格式(EDF)进行了改进,利用VC++6.0开发环境实现了EDF格式文件的图形创建、结构体引用以及文件保存,同时增加了多层图形套刻和邻近效应修正数据处理的功能。实验结果表明,改进后的电子束曝光图形文件格式可满足用户的需求,便于用户新建版图文件,同时也提高了文件传输速度及曝光的效率。     

电子束光刻技术与图形数据处理技术

介绍了微纳米加工领域的关键工艺技术——电子束光刻技术与图形数据处理技术,包括:电子束直写技术、电子束邻近效应校正技术、光学曝光系统与电子束曝光系统之间的匹配与混合光刻技术、电子束曝光工艺技术、微光刻图形数据处理与数据转换技术以及电子束邻近效应校正图形数据处理技术。重点推荐应用于电子束光刻的几种常用抗蚀剂的主要工艺条件与参考值,同时推荐了可以在集成电路版图编辑软件L-Edit中方便调用的应用于绘制含有任意角度单元图形和任意函数曲线的复杂图形编辑模块。     

图形发生器单元圆生成算法及填充策略

随着微电子技术的发展，某些特殊器件如集成光栅的生产，需要进行圆弧图形的曝光。在Bresenham算法的基础上，提出了一种圆生成算法及填充策略。该方法通过设置决策函数和迭代增量，判断最接近圆函数曲线的象素点，从而得到和圆函数图形逼近较好的曲线图形。这种算法应用于以DSP芯片为基础的电子束曝光机图形发生器上，可以快速又较好地得出圆图形单元的各象素点，输出信号至D／A，通过信号转换控制偏转放大器绘制图形。此算法适于硬件完成，简化了数据处理过程，并提高了图形绘制速度和图形精度。     

电子束曝光数据格式转换中的图形离散算法研究

开展了圆环弧类图形离散算法的研究,提出了一种以图形的曲率半径作为离散精度依据的离散算法,既保证了高的离散精度又减小了数据量,提高了数据传输效率.该算法为曝光版图中不断出现的圆环弧类图形进行精确曝光提供了保障.通过图形实例进行验证,表明此种离散方法合理,离散结果适于电子束曝光要求.     

可变矩形电子束曝光机数据格式转换软件的移植

详细介绍了如何在微机上实现ＪＢＸ－６ＡⅡ型可变矩形电子束曝光机的数据格式转换工作。在熟悉通用图形数据ＣＩＦ格式和专用图形数据ＪＥＯＬ５１格式的基础上,对如何实现ＣＩＦ格式到ＪＥＯＬ５１格式的转换作了论述,并给出了程序流程图,此外,提出了两种曝光数据检验的方法,并对日光光实验中应注意的问题作了说明。     

简讯

日本电电公社电气通信研究所于1975年开始研制电子束曝光机,1979年开始研究电子束直接曝光技术,1980年研制出EB55高精度电子束曝光机,可制作最小线宽为0.5μm的VLSI图形。但是,每小时只能曝光一块晶片。因此,最近又研制出一种新的高速电子束曝光机EB57。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-