OEIC光接收机研究的湿法选择腐蚀

试验了用柠檬酸与双氧水系列腐蚀液来实现ＩｎＡｌ（Ｇａ）Ａｓ∶ＩｎＰ和ＩｎＧａＡｓ∶ＩｎＡｌＡｓ的选择腐蚀,达到了较好的效果,且工艺重复性好。同一单片上ＭＳＭ（金属－半导体－金属）光探测器的光响应度可达到０．５Ａ／Ｗ,ＨＥＭＴ器件最大跨导为３０５ｍＳ／ｍｍ,最大饱和电流密度为３５０ｍＡ／ｍｍ。完成了实现ＯＥＩＣ光接收机的关键一步。     

OEIC光接收机研究的湿法选择腐蚀

试验了用柠檬酸与双氧水系列腐蚀液来实现ＩｎＡｌ（Ｇａ）Ａｓ：ＩｎＰ和ＩｎＧａＡｓ：ＩｎＡｌＡｓ的选择腐蚀,达到了较好的效果,且工艺重复性好。同一单片上ＭＳＭ光探测器的光响应度可达到０．５Ａ／Ｗ,ＨＥＭＴ器件最大跨导为３０５ｍＳ／ｍｍ,最大饱和电流密度为３５０ｍＡ／ｍｍ。完成了实现ＯＥＩＣ光接收机的关键一步。     

长波长超辐射集成光源

为适应光谱分割技术的需求,我们采用ＩｎＧａＡｓＰ／ＩｎＰ单量子阱外延片,用直接耦合的方法将超辐射发光管与半导体光放大器单片集成,制得了１．３μｍ长波长超辐射集成光源,取得了初步的实验结果,验证了这种长波长集成器件的可行性。脉冲输出功率与长波长超辐射发光管相比有很大提高。半导体光放大器的增益达到１９ｄＢ。     

单片集成长波长光接收机

介绍了利用InGaAs 长波长金属-半导体-金属(MSM)光探测器与InAlAs/InGaAs 高电子迁移率晶体管(HEMT)集成来实现长波长单片集成光接收机的材料和电路设计、关键工艺途径等,解决了工艺兼容性问题,实现了2.5Gb/s传输速率下功能正确的单片集成长波长光接收机样品.     

Ⅲ族锢源对LP－MOVPE方法生长In_（1－x）Ga_xAs材料的影响

本文报道了利用低压金属有机物汽相外延（ＬＰ－ＭＯＶＰＥ）技术，在（００１）ＩｎＰ衬底上生长Ｉｎ_（１－ｘ）Ｇａ_ｘＡｓ体材料及Ｉｎ_（１－ｘ）Ｇａ_ｘＡｓ／ＩｎＰ量子阶结构材料的结果．对于ＴＭＧ／ＴＥＩｎ源，Ｉｎ_（１－ｘ）Ｇａ_ｘＡｓ材料的非故意掺杂载流子依匿为７．２×１０１６ｃｍ－３，最窄光致发光峰值半宽为１８．９ｍｅＶ，转靶Ｘ光衍射仪对量子阶结构材料测到±２级卫星峰；而对于ＴＭＧ／ＴＭＩｎ源，非故意掺杂载流于浓度为３．１×１０￣１５ｃｍ￣（－３），最窄光致发光峰值半宽为８．９ｍｅＶ，转靶Ｘ光衍射仪对量子阶     

InP基HEMT制作的全集成D波段单片振荡—倍频链

本文报道了Ｄ波段单片振荡－倍频链的设计、ＭＭＩＣ制作及测试。该电路用亚微米（０．１μｍ）ＩｎＡｌＡｓ／ＩｎＧａＡｓＨＥＭＴ制造，且芯片上有稳定偏压电路，一个集成的Ｅ场探针将信号直接辐射入波导。检测到振荡信号的频率范围为１３０．５ＧＨｚ至１３２．８ＧＨｚ，输入功率为－１２ｄＢｍ，设计的ＨＥＭＴ小栅宽为４５μｍ。这是首次报道的用ＩｎＰ基ＨＥＭＴ制作的Ｄ波段单片振荡－倍频链。     

单片共面94GHz调频连续波雷达传感器

本文介绍了一种采用０．１５μｍＡ１ＧａＡｓ／ＩｎＧａＡｓＰＭ－ＨＥＭＴ技术的低功耗９４ＧＨｚ单片集成共面调频连续波雷达的芯片。此芯片包括ＶＣＯ、数个ＧＨｚ的电调范围,发射和接收放大器,混频器和定向耦合器。单片微波集成电路仅８ｍｍ＾２,在０．７Ｗ的直流电能消耗中传输射频功率达１０ｍｗ。接收机噪音系数为６－７ｄｐ,变频增１０ｄＢ。     

MBE生长InGaAs／GaAs应变层单量子阱激光器结构材料的研究

采用ＶａｒｉａｎＧｅｎⅡＭＢＥ生长系统研究了ＩｎＧａＡｓ／ＧａＡｓ应变层单量子阶（ＳＳＱＷ）激光器结构材料。通过ＭＢＥ生长实验，探索了Ｉｎ＿ｘＧａ＿（１－ｘ）ｔＡｓ／ＧａＡｓＳＳＱＷ激光器发射波长（λ）与Ｉｎ组分（ｘ）和阱宽（Ｌ＿ｚ）的关系，并与理论计算作了比较，两者符合得很好。还研究了材料生长参数对器件性能的影响，主要包括：Ⅴ／Ⅲ束流比，量子阱结构的生长温度Ｔ＿ｇ（ＱＷ），生长速率和掺杂浓度对激光器波长、阈值电流密度、微分量子效率和器件串联电阻的影响。以此为基础，通过优化器件结构和ＭＢＥ生长条件，获得了性能优异的Ｉｎ＿（０．２）Ｇａ＿（０．８）Ａｓ／ＧａＡｓ应变层单量子阱激光器：其次长为９６３ｎｍ，阈值电流密度为１３５Ａ／ｃｍ￣２，微分量子效率为３５．１％。     

InP基HEMT制作的全集成D波段单片振荡－倍频链

本文报道了Ｄ波段单片振荡－倍频链的设计、ＭＭＩＣ制作及测试。该电路用亚微米（０．１μｍ）ＩｎＡｌＡｓ／ＩｎＧａＡｓＨＥＭＴ制造，且芯片上有稳定偏压电路，一个集成的Ｅ场探针书信号直接辐射入波导。检测到振荡信号的频率范围为１３０．５ＧＨｚ至１３２．８ＧＨｚ，输入功率为—１２ｄＢｍ，设计的ＨＥＭＴ小栅宽为４５μｍ。这是首次报道的用ＩｎＰ基ＨＥＭＴ制作的Ｄ波段单片振荡－倍频链。     

InGaAsP及其量子阱结构的LP－MOCVD

报道了用低压金属有机化学汽相淀积（ＬＰ－ＭＯＣＶＤ）技术在（１００）ＩｎＰ衬底上生长ＩｎＧａＡｓＰ体材料及ＩｎＧａＡｓＰ（１．３μｍ）／ＩｎＧａＡｓＰ（１．６μｍ）量子阱结构的生长条件和实验结果。比较了５５０℃和５８０℃两个生长温度下Ｉｎ１－ｘＧａｘＡｓｙＰ１－ｙ体材料及相应量子阱结构的特性，表明在５８０℃生长条件下，晶体具有更好的质量和特性。     

薄膜亚微米CMOS／SOS工艺的开发及其器件的研制

本文较为详细地介绍了薄膜亚微米ＣＭＯＳ／ＳＯＳ工艺技术的开发过程，薄膜亚微米ＣＭＯＳ／ＳＯＳ工艺主要包括双固相外延，双层胶光刻形成亚微米细线条硅栅、Ｈ２－Ｏ２合成氧化薄栅氧化层以及快速退火等新的工艺技术，利用这套工艺成功地研制出了高性能薄膜来微米ＣＭＯＳ／ＳＯＳ器件和门延迟时间仅为１７７ｐｓ的１９级ＣＭＯＳ／ＳＯＳ环形振荡器，与厚膜器件相比，薄膜全耗尺器件和电路的性能得到了明显的提高。     

一种超高速触发器工艺技术的研究

在等平面Ｓ工艺基础上，开发了一种ＥＣＬ超高速Ｄ触发器的ＩＣ工艺制作技术，并优化其关键工艺，得出一套新的工艺控制方案和参数。用该工艺技术制作的晶体管截止频率ｆＴ最大值为５．４ＧＨｚ（Ｖｃｅ＝５Ｖ）；制作的ＥＣＬ超高速Ｄ触发器，在功耗电流只有３０ｍＡ情况下，工作频率典型值为８５０ＭＨｚ，最高可达９００ＭＨｚ以上，较好地解决了器件速度与功耗的矛盾。     

Comparative Study of Energy Quantization Approaches in Nanoscale MOSFETs

An analytical model has been developed to study inversion layer quantization in the ultra thin oxide MOS(metal oxide semiconductor)structures using variation and triangular well approaches.Accurate modeling of the inversion charge density using the continuous surface potential equations has been done.No approximation has been taken to model the inversion layer quantization process.The results show that the variation approach describes inversion layer quantization process accurately as it matches well with the BSIM 5(Berkeley short channel insulated gate field effect transistor model 5)results more closely compared with triangular well approach.     

用于磁控溅射膜的一种剥离技术

为了解决磁控溅射膜的剥离问题,该文研制了一种新型的双层胶剥离技术。通过调整双层光刻胶的坚膜时间、坚膜温度和显影时间,制备出好的光刻胶倒梯形形貌,得到磁控溅射膜较好的剥离效果。为薄膜体声波谐振器（FBAR）的研制提供了有意义的指导。     

Electrical properties for MOS LSI's fabricated using stacked Oxide SWAMI technology

The stacked oxide SWAMI (STOMI) process, in which the SWAMI process is improved by employing CVD oxide deposition on the first nitride film, has been developed. The stacked oxide plays an important role in process stability and controllability in fabricating VLSI devices. A large punchthrough voltage between diffused layers, a small sidewall capacitance for the n⁺-p junction, and a small narrow-channel effect for silicon gate n-channel MOSFET's have been achieved by the STOMI process. A 256-kbit dynamic RAM with high performance has also been fabricated successfully. The STOMI process is particularly advantageous as an isolation technique applicable to advanced devices with small (< 1 µm) geometries.     

4英寸锑化铟晶体自动生长控制研究与实现

锑化铟(InSb)晶体是一种中波红外光电子材料,在工程实践领域已得到广泛应用。但锑化铟晶体受温场结构和其固有特性的影响,在生长过程中表现出对温度(功率)变化的敏感性和滞后性相矛盾的特点,导致在生长过程中自动控制较难。该文开展了针对锑化铟晶体对温度(功率)变化滞后性和敏感性的工艺研究与实验,分析了滞后时间与功率改变量之间的关系,通过算法解决了相应的问题,最终实现了4英寸(1英寸=2.54 cm)锑化铟晶体自动化控制生长。     

高可靠镀Ni／Au工艺及其在微波PTFE电路上的应用

介绍了高可靠电镀Ｎｉ／Ａｕ工艺在ＰＴＦＥ微波印制电路上的应用，并分析了氨基磺酸盐镀软镍和亚硫酸盐镀软金工艺的影响因素及提高Ｎｉ／Ａｕ镀层之间附着力的措施。通过实验及应用证明了与直接镀金工艺相比，在软基材ＰＴＦＥ敷铜箔板上镀Ｎｉ／Ａｕ工艺能大大提高微波电路的可焊性，高温稳定性和长期可靠性，并且用其所制作的微波器件的高频性能也优于直接镀金工业。     

Parametric estimation of time-varying components using orthogonal bases

For nonstationary processes, classical frequency estimation methods are incapable of describing and showing the information embedded in the process. That is, because the statistical characteristics (SC) of the nonstationary processes are changing with time, estimation methods based on the stationarity assumption do not reflect this variation. Therefore, the idea of the time-frequency (TF) distribution has been introduced in the literature. Different methods for estimating the TF distribution (TFD) of a nonstationary process have also been proposed in the literature. All of these methods, however, depend on the degree of nonstationarity (DON) of the process, which, although of utmost importance, has not been yet addressed in the literature. In this paper, an algorithm for estimating the time-varying components (TVCs), and hence the TF kernel, of a non-stationary process by using orthogonal projection is proposed. The process is carried out by projecting each component of the process onto an expanding orthogonal basis. The TF kernel is then estimated with an order based on the dimensionality of the expanding orthogonal basis. Some experimental results are presented when the process has either single or multiple TVCs. This revised version was published online in June 2006 with corrections to the Cover Date.     

两种湿化学法制备PZT陶瓷的成分和结构研究

用两种湿化学法(水热法和溶胶-凝胶法)制备了PZT纳米粉体，并经烧结得到PZT微晶陶瓷。对两种方法所得的陶瓷进行介电测量。分析表明：水热法制粉后经烧结所得陶瓷的锆钛比(Zr／Ti)与原料的理论配比有较大的偏离，而溶胶-凝胶法制粉所得陶瓷的锆钛比(Zr／Ti)能较好地反映原料的锆钛配比。     

A generalization of Freund's model for a repairable paired component based on a bivariate Geiger Muller (G.M.) counter

It has been envisaged in this paper to obtain the probability of the first system failure in a bicomponent parallel system. Following Freund (J. Am. Statist. Ass.56, 971–977, 1961), it has been assumed that the hazard rate of the surviving component suddenly jumps up on the failure of its counterpart. The system failure occurs when the surviving component with increased hazard rate fails while its counterpart is under repair for a fixed period π. Under this set up, the probability of the first system failure on the rth failure (r = 1,2,3…) of either of the two component has been worked out. Specific examples with Poisson inputs have been shown. It has been noticed as the process is a non-Markovian one, estimation of the parameters λ and λ′ (being the original hazard rate and the aggravated hazard rate), with the method of Moments having not been easily estimable; the process of embedded Markov chain has been utilized to estimate the parameters of the non-Markov process.