光纤电流互感器用半导体激光器数字驱动电路设计

半导体激光器的输出性能直接决定了光纤电流互感器的测量精度和长期运行稳定性。为提高光纤电流互感器的测量精度与稳定性,设计了一种高精度半导体激光器数字驱动电路。以STM32微控制器为控制核心,利用高精度电流源芯片ADN8810实现驱动电流的精密控制,同时采用集成温控芯片MAX1978通过控制半导体制冷片的工作电流实现对激光器温度的精确控制。经实验测试,其输出电流稳定度为0.028%,温度控制稳定度为0.18%,激光器输出光功率稳定度达到0.06%,输出波长稳定度为0.05pm。该设计能够满足光纤电流互感器对光源输出性能的要求。     

高功率半导体激光器线阵列的波长锁定技术

高功率半导体激光器光谱随温度和工作电流的变化比较大,光谱线宽比较宽,这些缺点直接限制了其实际应用.因此,高功率半导体激光器波长稳定技术的研究是激光领域的一个重要研究方向.对波长稳定技术进行研究.实验用体布拉格光栅(VBG)作为反馈元件与高功率半导体激光器线阵列,构成可以对其波长进行锁定的外腔激光器.分析了外腔激光器的波长锁定效果与高功率半导体激光器工作电流、冷却温度、工作电流的占空比和"smile"现象等因素的关系.研究结果表明,高功率半导体激光器的工作电流、冷却温度、工作电流的占空比会影响其激射波长,当激射波长与VBG的布拉格波长差值小于3.0 nm时,可以得到较好的波长锁定效果,而阵列本身的"smile"现象对其波长锁定的影响不大.     

高稳定低温漂半导体激光器驱动的电子学设计

介绍了一种半导体激光器驱动系统,主要包括温度稳定控制电路、电流稳定控制电路和保护电路,给出了具体的参考电路。通过同时对激光器的工作电流及其温度进行精密控制,使得激光器能稳定工作。实验表明,该驱动控制的激光器在恒温(室温)下工作90min输出波长漂移不超过0.6pm 。外界环境温度10-50℃范围内,激光器输出波长漂移不超过16pm,适用于对激光器稳定要求高的场合。     

大功率宽条分布反馈激光器研究

大功率半导体激光器一般用作抽运源,但其抽运的离子吸收峰带宽一般都比较小。为提高大功率半导体激光器对固体或光纤激光器等的抽运效率,就要降低半导体激光器的输出波长随注入电流和热沉温度的漂移系数。分析了光栅深度和光栅填充因子对激光器输出波长锁定效果的影响,实验验证确定出合适的光栅参数,依据优化条件得出合适的激光器腔长,制备出锁定效果良好的宽条分布反馈激光器。该激光器的单管腔长2.4mm,发光条宽100μm,连续最大输出功率400mW,热沉温度为15℃时的输出波长为954nm,输出波长随注入电流的漂移系数为0.67nm/A,输出波长的温漂系数为0.046nm/K。     

半导体激光器的光谱及参数测量

半导体激光器的输出光谱,反映了激光器本身的基本工作特性。本文从实验上研究了半导体激光器的输出光谱特性随偏置电流而变化的关系,并对其进行了理论分析。在此基础上,进一步测得了半导体激光器的热阻,增益峰值波长和纵模波长对载流子密度的相对变化率等基本参量。     

功率稳定且波长可调谐的窄线宽分布式反馈半导体激光器

提出一种新型的分布式反馈(DFB)半导体激光器,该激光器具有宽带波长可调谐、线宽窄、功率稳定的特点。该DFB激光器芯片通过采用非对称相移光栅结构,有效地压窄了输出光信号的线宽。基于高精度的温度和电流控制,有效控制激光器内部载流子动态特性与材料折射率,使得激光器输出波长可以实现宽带调谐,并且输出光功率保持稳定。其中,电流控制精度为10μA,温度控制精度为0.004℃,激光器的波长调谐范围为3.5nm,输出光功率为7.4mW,边模抑制比为52.7dB,线宽约为220kHz。该激光器有望应用于可调谐二极管激光吸收光谱(TDLAS)的研究中。     

半导体激光器的输出模谱

利用半导体激光器多模速率方程组的隐式解析解，考虑到实际激光器的峰值增益波长与峰值谐振波长往往不一致的情况，从理论上对不同电流下半导体激光器的输出模谱进行了研究。     

半导体激光器高精度稳频输出控制系统

为了在光纤干涉仪中得到光源高精度稳频输出,采用高稳定度的恒温控制以及功率稳恒控制方法,通过高信噪比的运算放大器、半导体制冷器,设计了一种激光电源驱动系统,并进行了理论分析和实验验证。其能为半导体激光器提供温度控制精度在±0.01℃,制冷驱动电流可达800mA,同时使得半导体激光器输出波长控制精度在±0.1nm,驱动电流最大输出可达180mA,输出电流的稳定度为10-4~10-5。结果表明,该系统不仅结构简单,而且温度控制稳定、准确度高,可使半导体激光器的输出波长保持稳定,保证了干涉型光纤传感器的测量准确度以及在通信领域中的应用。     

SG-DBR激光器波长自动测试控制系统

基于LabVIEW虚拟仪器平台,研制了一套可调谐取样光栅分布布拉格反射式(Sampled Grating Distributed Bragg Reflector,SG-DBR)激光器的波长自动测试控制系统.该系统能对四段式SG-DBR激光器进行电流扫描,采集、分析其输出光谱,生成SG-DBR激光器的"波长-电流"数据查询表; 并且通过调用数据查询表,实现对SG-DBR激光器输出波长的控制.     

大功率半导体激光器恒流源设计

介绍了一种单片机控制的大功率半导体激光器的恒流源电路设计,其输出电流在0-65A连续可调,电流控制精度可达3‰以上.同时,该电路还可以控制半导体激光器的工作温度,并可通过电脑方便地对温度进行设置.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-