干涉型光纤传感器相位漂移的无源解决方法

相位漂移是干涉型光纤传感器实际应用中遇到的关键问题之一。提出了一种基于线性控制原理的无源解决方法,利用干涉仪的输出信号得到一个误差信号对光源波长进行调节,在非平衡干涉仪中产生一个补偿相位,对各种噪声引起的相位漂移进行补偿,从而使干涉仪一直工作在最灵敏的地方,实现了无源线性检测。搭建实验系统,利用该方法对某一干涉型光纤水听器进行了测试,结果表明该光纤水听器被很好地控制在正交工作状态,获得了稳定的输出信号。在20~2500 Hz频率范围内,该光纤水听器的声压灵敏度为-156.5 dB(0 dB=1 rad/μPa),频响波动<±1.2 dB,与采用相位载波(PGC)调制解调方法测得的结果一致,从而验证了该方法的可行性。     

基于铒镱共掺分布布拉格反射式光纤激光器的有源光纤水听器声压灵敏度

对基于铒镱共掺分布布拉格反射式光纤激光器(DBR-FL)的有源光纤水听器进行了研究.制作了腔长为8 cm的铒镱共掺DBR-FL,在抽运功率为50 mW时,激光器的输出功率达到0.263 mW;采用带法拉第旋镜的迈克尔逊干涉仪和相佗载波(PGC)解调方案,解调出施加在铒镱共掺DBR-FL有源光纤水听器的声信号,并通过与标准压电水听器对比得到声压灵敏度;对单频信号进行多次测量,声压灵敏度的波动小于±0.6 dB;测量了80 Hz到2.5 kHz频率范围的响应曲线,除125 Hz,200 Hz和250 Hz三个频点外,声压灵敏度已达到或超过部分文献报道中干涉型光纤水听器的灵敏度;与基于DFB-FL的有源光纤水听器做了对比测试,结果表明频率响应不平坦是未对水听器进行封装和测试系统引起的.     

基于相位载波调制解调技术的全保偏光纤水听器

报道了基于相位载波调制解调技术的全保偏光纤水听器研究结果.采用全保偏光纤干涉仪结构消除了偏振不稳定性,运用相位载波调制解调信号处理技术消除相位随机漂移引起的干涉信号衰落的影响,实现了对声信号的稳定检测和光纤水听器探头的全光纤化.实验测得在20～1 600 Hz频段,光纤水听器的相位灵敏度约为-162.5 dB,灵敏度的起伏为±0.7 dB,500 Hz单频点的灵敏度变化小于0.1 dB.     

基于LabVIEW的光纤水听器闭环工作点控制系统

介绍了一种基于LabVIEW的干涉型光纤水听器闭环工作点控制系统.该系统通过调节光源频率,利用非平衡干涉仪两臂的光程差产生补偿相位,实现了工作点的控制,从而避免了在干涉仪中引入压电陶瓷(PZT),提高了系统的稳定性与可靠性.同时,对传统的信号解调算法进行了改进,提高了解调精度和动态范围.利用该系统对某一干涉型光纤水听器的声压相位灵敏度进行了测量.在频带102～2×103 Hz上,平均灵敏度为-162 dB,频响波动＜±1.0 dB,与采用相位载波(PGC)调制解调方法测量的结果基本一致,验证了该系统的可行性.     

封装对超细型DFB光纤激光水听器性能的影响(特邀)

对超细型DFB光纤激光水听器探头封装进行了研究。通过有限元方法建立了封装结构理论模型,探讨了影响超细型光纤激光水听器频率响应与灵敏度起伏之间的因素,在灵敏度、频响一致性等指标间找到了平衡点。最后,制作了光纤激光水听器,直径6 mm,长度55 mm,灵敏度-130 dB,100 Hz~2 kHz灵敏度响应起伏4 dB,通过测试验证了理论分析和仿真的符合性。     

压差式光纤矢量水听器声压相位灵敏度研究

该文介绍了压差式光纤矢量水听器及其基元的工作原理,并分析了光纤层等效处理对仿真结果的影响。基于有限元法对压差式光纤矢量水听器的基本性能进行了仿真分析,根据仿真模型所选定的参数研制压差式光纤矢量水听器样品,并对样品在频率为20～1 000 Hz时进行了测试。测试结果表明,声压相位灵敏度的仿真计算结果与实验测试结果基本一致,平均差值约为1.0 dB。研究结果表明,采用有限元法对压差式光纤矢量水听器的声压相位灵敏度进行仿真具有可行性。     

一种用于干涉型光纤传感器动态相移测量的J0-J1法

提出了一种用于干涉型光纤传感器动态相移测量的J0-J1法,实现了无源零差检测,而且信号解调算法简单,检测频带宽。详细介绍了该方法的基本检测原理,并对解调误差进行了理论分析与仿真,得出了系统能够检测的最大动态相移幅度与干涉仪的工作点允许变化的范围相互制约的结论。编写了实时的信号采集、处理程序,对某一干涉型光纤水听器探头的声压灵敏度进行了测量。在频带20~1300Hz上,平均声压灵敏度为-162dB(0dB=1rad/μPa),波动<±1.0dB,单频点500Hz的灵敏度变化<±0.5dB,与采用相位载波(PGC)调制解调法测量的结果基本一致,验证了J0-J1法的可行性。     

低加速度灵敏度的分布反馈式光纤激光水听器研究

针对分布反馈式(DFB)光纤激光水听器的加速度响应影响声压信号探测的问题,研制了一种聚氨酯端面增敏结构的DFB光纤激光水听器。建立了该结构水听器的加速度灵敏度理论模型,理论分析了套筒结构与水听器的加速度灵敏度的关系,仿真分析了水听器两端聚氨酯的弹性模量、泊松比以及高度的差异与其加速度灵敏度的关系,实现了对水听器各结构以及材料参数的优化,并制作了水听器原型样品与拖曳线列样阵,分别开展了加速度灵敏度测试和湖上动态拖曳实验研究。实验结果表明,该结构水听器在20~2000Hz频率范围内的加速度灵敏度在各频点均小于1.2dB,与理论分析结果较为吻合,在动态拖曳过程中的变速运动阶段也能对目标形成较高信噪比的稳定波束指向。水听器的抗加速度性能得到了有效预测以及实验验证。     

一种新型三维MEMS电容式矢量水听器研制

介绍了一种基于MEMS工艺设计的电容式矢量水听器.该矢量水听器的检测单元包括一个“三明治”结构敏感芯片和一个采用变送集成技术的信号调理电路.通过优化敏感芯片的结构和低噪声的信号调理电路,使矢量水听器得到很高的灵敏度、分辨率.利用MEMS微机械加工工艺制作出矢量水听器,检测单元相互正交并进行了声学灌封.矢量水听器完成了水下驻波场测试,测试结果表明:该矢量水听器的接收灵敏度在1 000Hz时达到-180 dB(0 dB re 1 V/μPa),动态范围大于120 dB.     

芯轴型光纤水听器灵敏度的优化设计

声压相移灵敏度是光纤水听器的重要指标之一,提高灵敏度是光纤水听器设计的基本原则.应用正交设计方法对光纤水听器声压灵敏度指标进行优化设计,提出了一种带空气腔芯轴型光纤水听器的三维声压相移灵敏度理论模型,对其灵敏度特性进行了研究.根据提出的结构,制作了探头.通过试验测试,理论模型符合实际测试结果,并且通过极差分析方法得到各种因素对于光纤水听器灵敏度的影响程度,进而得到了优化设计方案.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its