语言类录音教材产品的音频光盘母版加工

母版加工技术是以音频光盘为载体的录音教材产品制作的最终环节,其关系到产品的整体质量.通过对以音频光盘为载体的语言录音教材产品母版加工技术环节和主要内容的论述,探讨了教育音像出版单位的数字音频母版加工规范化方式.     

论响度在计算机音乐制作及音频录制中的作用

通过论述人耳感知响度的听觉特性，将响度因素与计算机音乐制作、音频录制等工作环节相关联，分析了响度在计算机音乐完成中的重要作用。同时，结合响度因素，为更好地开展计算机音乐制作、录音等工作，提供了改善响度的一些指导性方法。     

语言类录音教材产品编辑加工中的音色处理

通过对语音信号频谱特点和听感特征的分析,探讨了语言类录音教材产品后期制作中语音音色处理的基本要求和主要方法,为高质量语言录音教材的产品加工提供了相应的技术指导。     

浅谈数字电视节目制作端响度控制

近两年“金帆奖”评比中声音录制规范中增加了对响度的要求。制作域环节是关系到节目源响度是否统一的最初始环节,所以能否在节目的制作端有效进行监测并控制节目响度成为了解决响度问题的关键。本文就“金帆奖”参评节目的响度控制进行阐述,分享经验体会。     

音乐录音与响度

此文论述了响旗的内在机理与外在因素，音乐录音与响度的关系，响度在音乐录音中的作用及重要性，以及音乐录音与响度相关的音量问题。尤为突出的是阐述了响度和音质的主观评价音乐节目的艺术质量相关的问题。这是较新的论述和论点，从而为我们更加深入地研究响度提供了一些信息，同时提出了对响度进行改善的一些措施，使我们对响度有了更深一步的了解和认识。     

语言录音技术探讨

录音技术,是艺术和技术的完美结合。它既是一门科学,又是一门艺术。它在我国广播电视新闻宣传工作中,尤其在影视工作中,占有很重要的地位。在影视节目的录制中,不管节目的形式怎样变化,是专题、新闻报道,还是电视剧等等,最基本的是语言录音。所以语言录音是录音技术的基本功。     

论2004年维也纳爱乐乐团赴渝新年音乐会实况录音

众所周知，音乐录音向来被认为是各种录音操作中最复杂，最难以用理论给予诠释的录音实践，而对交响乐的录制更视为难中之难，因为它不仅要求了解各种乐器的特性硬管弦乐队的编制，还要熟悉各种录音器材的性能并进行精确调整，在扩声的同时还要考虑到观众的听觉特性而对各声部之间给予平衡补偿。因此，怎样使播出的音响及现场扩声都取得令人满意的效果一直都是录音界的同行们殚精竭力进行研究的问题。为此，我想就不久前录制的2004年维也纳爱乐乐团赴渝新年音乐会实况录音为例，谈谈我们在录制过程中的一些心得，与大家共同探讨。     

语言类广播节目的录音与制作技巧研究

作为只有声音,没有画面的节目来说,语言类广播节目在录音和制作过程中必须充分对节目录制技巧进行研究,运用多种手法吸引听众注意力,提升节目质量。论文对语言类广播节目的录音与制作技巧进行了研究,给出了一定建议。     

5.1声道环绕声节目制作浅析

介绍了5.1声道环绕声节目制作过程中现场同期声的录制、转录、配音、拟音、音乐录音、音频编辑、预混、终混等环节的实现方法及部分环节的操作注意事项。     

浅析电视节目制作中的音频噪声干扰因素

在电视节目制作中音频的录制是不可缺少的重要环节,声音录制好坏将直接影响电视节目的效果。但是音频录制的质量一般不大引起人们的重视,导致有些电视节目的噪声较大,严重影响了整个电视节目的艺术效果。这里有两个原因,一是电视工作者主观上对声音制作不重视,片面强调画面在电视中的主导作用,忽视音频录制工作;二是电视工作者缺少音频录制技术,导致在新闻采访、现场直播以及在电视节目编辑的音频制作过程中出现音频噪声,从而影响电视节目的艺术效果。本文从录音技术的角度分析一下造成音频录制噪声中的主要因素。1 交流电源干扰因…     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its