用于微波/射频集成电路的一种新型低损耗介质——多孔硅及氧化多孔硅厚膜

提出在单片微波集成电路(MMIC)中用多孔硅/氧化多孔硅厚膜作微波无源器件的低损耗介质膜.研究了厚度为70μm的多孔硅/氧化多孔硅厚膜在低阻硅衬底上的形成,这层厚膜增加了衬底的电阻率,减少了微波的有效介质损耗.通过测量在低阻硅衬底上形成的氧化多孔硅厚膜上的共平面波导的微波特性,证明了在低阻硅衬底上用厚膜氧化多孔硅可以提高共平面传输线(CPW)的微波特性.     

用于微波/射频集成电路的一种新型低损耗介质——多孔硅及氧化多孔硅厚膜

提出在单片微波集成电路(MMIC)中用多孔硅/氧化多孔硅厚膜作微波无源器件的低损耗介质膜.研究了厚度为70μm的多孔硅/氧化多孔硅厚膜在低阻硅衬底上的形成,这层厚膜增加了衬底的电阻率,减少了微波的有效介质损耗.通过测量在低阻硅衬底上形成的氧化多孔硅厚膜上的共平面波导的微波特性,证明了在低阻硅衬底上用厚膜氧化多孔硅可以提高共平面传输线(CPW)的微波特性.     

电阻率对硅衬底微波传输特性影响分析

针对传统硅衬底介质损耗大的现象,通过软件电磁仿真手段分析不同电阻率硅衬底上微带线的传输特性,系统研究电阻率变化对硅衬底微波传输特性的影响,并与基于MEMS三维加工的低阻硅衬底进行比较。在30 GHz频率范围内,当硅衬底电阻率从10Ω·cm提升至4 000Ω·cm时,微带线插入损耗从20 dB/cm降低至0.6 dB/cm。电阻率大于100Ω·cm的高阻硅衬底微波传输特性优于带MEMS空腔的10Ω·cm低阻硅衬底。结果表明提升电阻率可有效降低硅衬底微波传输损耗,结合低成本成熟工艺等优点,高阻硅衬底具有广阔的微波集成应用前景。     

Si基微波单片集成电路的发展

随着半导体制造技术和材料技术的进步,Si基微波单片集成电路逐渐向高频、高线性、低噪声、低成本方向发展。介绍了近年国内外在Si基微波单片集成电路在制造工艺、电路结构和制作材料上的革新,阐述了三维Si微波单片集成电路技术、隔离槽技术、Si高阻衬底技术、SiGe技术等对Si基微波单片集成电路发展的影响,并列举了一些典型的应用。最后展望了Si基微波单片集成电路的发展前景。     

基于PEEC方法的片内螺旋电感建模

采用部分元等效电路方法,结合近似的三维闭式格林函数,在10GHz以下的频率范围提出了一种针对有耗硅衬底上螺旋电感的准静态建模新方法.该方法充分考虑了有耗的硅衬底、趋肤效应、接近效应等因素对螺旋电感电特性的影响,通过与全波分析方法对比,证明在相当宽的频率范围该方法是有效、可行的,可广泛应用于微波和射频硅集成电路的优化设计和仿真.     

在高阻硅衬底上制备低微波损耗的共面波导

分别在普通的低阻硅衬底、带有3μm厚氧化硅介质层的低阻硅衬底和高阻硅衬底上设计并制备了微波传输共面波导.结果表明,低阻硅衬底导致过高的微波损耗从而不能使用,通过加氧化硅介质层,微波损耗可以大大减少,但是需要较厚的氧化硅厚度.直接制备在高阻硅衬底上的共面波导在所测试的26GHz的频率范围内获得低于2dB/cm的微波损耗,而且工艺十分简单.     

基于PEEC方法的片内螺旋电感建模

采用部分元等效电路方法，结合近似的三维闭式格林函数，在10GHz以下的频率范围提出了一种针对有耗硅衬底上螺旋电感的准静态建模新方法．该方法充分考虑了有耗的硅衬底、趋肤效应、接近效应等因素对螺旋电感电特性的影响，通过与全波分析方法对比，证明在相当宽的频率范围该方法是有效、可行的，可广泛应用于微波和射频硅集成电路的优化设计和仿真．     

微型低压传感器的研究

本文叙述了使用硅集成电路工艺技术制作的电容式压力传感器.以常规LPCVD技术淀积的多品硅、经腐蚀掏空多晶硅层与硅衬底之间的中间氧化层形成空隙,随后将具有可变形的多品硅隔膜封成真空腔.该腔随外界压力改变引起多晶硅膜变形,用测量隔膜与硅衬底电极之间电容的变化来测量压力的变化。介绍了微型低压传感器的设计、制造工艺和测试结果.     

新颖的衬底pn结隔离型硅射频集成电感

提出了一种新的减小硅集成电感衬底损耗的方法.这种方法是直接在硅衬底形成间隔的pn结隔离以阻止螺旋电感诱导的涡流.衬底pn结间隔能用标准硅工艺实现而不需另外的工艺.本文设计和制作了硅集成电路,测量了硅集成电感的S参数并且从测量数据提取了电感的参数.研究了衬底结隔离对硅集成电感的品质因素Q的影响.结果表明一定深度的衬底结隔离能够取得很好的效果.在3GHz,衬底pn结隔离能使电感的品质因素Q值提高40%.     

新颖的衬底pn结隔离型硅射频集成电感

提出了一种新的减小硅集成电感衬底损耗的方法 .这种方法是直接在硅衬底形成间隔的 pn结隔离以阻止螺旋电感诱导的涡流 .衬底 pn结间隔能用标准硅工艺实现而不需另外的工艺 .本文设计和制作了硅集成电路 ,测量了硅集成电感的 S参数并且从测量数据提取了电感的参数 .研究了衬底结隔离对硅集成电感的品质因素 Q的影响 .结果表明一定深度的衬底结隔离能够取得很好的效果 .在 3GHz,衬底 pn结隔离能使电感的品质因素 Q值提高4 0 % .     

A novel laser direct write technique for fabrication of thin filmMICs

A technique for fabrication of thin-film circuits for microwave integrated circuit (MIC) application is presented. This low-cost fabrication technique utilizes laser direct write of copper patterns on alumina substrates. The method obviates the need for photomasks and photolithography. The film deposition mechanism, deposit film analysis, and MIC fabrication sequence are presented. Performance evaluation of MICs fabricated using this technique is also included     

基于砷化镓衬底的RF MEMS膜开关

射频微机械开关由于其优越的高频特性在微波和毫米波电路中表现出巨大的应用前景。但是目前的微机械开关都是制作在硅基衬底上的 ,难于与后面的高频砷化镓处理电路相集成。本文介绍了基于砷化镓衬底的RFMEMS膜开关 ,着重介绍了开关的工作原理、制作过程和测试结果     

Double-sided MICs and their applications

The basic concept and features are presented of double-sided microwave integrated circuits (double-sided MICs), which effectively utilize various kinds of transmission lines on both sides of a substrate. The fundamental circuits such as 180° hybrids (magic Ts) and many application circuits described here are very useful in developing microwave and millimeter-wave band equipment. The concept of the double-sided MIC technique is also suitable for application to monolithic MICs     

Film technology in microwave integrated circuits

A review of the material technology for microwave integrated circuits (MICs) is presented. The types of microwave circuit media that have been used are described and classified as a function of the amount of size reduction or integration which corresponds to the effective dielectric constant of the media. The materials used for substrates, conductors, dielectrics, and resistors are considered in terms of the requirements for microwave circuits. The fabrication of multilayered thin-film circuits and the various thin-film combinations that have been used in MICs are discussed. The various loss contributions for microstrip circuits produced by thin- and thick-film technology and substrate material are compared with each other as a function of frequency. It is concluded that microwave circuits operating at frequencies 2 GHz and above require thin-films on pure smooth substrates.     

Microwave and millimeter-wave integrated circuits

This historical review is divided into three sections: microwave integrated circuits (MICs), monolithic microwave integrated circuits (MMICs), and MIC and millimeter-wave integrated-circuit applications     

Conception assistée par ordinateur des circuits intégrés monolithiques hyperfréquences

Computer aided design of microwave monolithic integrated circuits must combine two different fields. The first domain is the simulation of microwave circuits taking into account non linear aspects development of time domain and harmonic balance simulation algorithms specialized for microwave circuits. In the second place are found, the layout algorithms which were developed for logic circuits (on Si or GaAs). The association of these two types of algorithms leads to the constitution of aCad workstation for microwave monolithic integrated circuits. Two examples of design and realization of integrated circuits with these tools are presented.     

甚宽带PBG滤波器结构

研究了光子带隙结构作为微带电路衬底的情况,分析其阻带特性的形成以及对电路性能的影响.提出了利用级联与混合并联结构设计具有很宽频带的滤波器形式.实验测量了其传输特性,验证了频率阻带的存在和作为宽带滤波器结构的可行性.     

An MIC Doppler Module with Output Radiation Normal to the Substrate Plane

A flat Doppler module, only 18 mm thick, was fabricated. The module is based on a microwave integrated circuits (MIC) stabilized oscillator having a dipole antenna on a single substrate. It emits a microwave beam normal to the substrate plane whose radiation pattern is nearly symmetrical around the normal axis with a half-power-angle of about 60/spl deg/.     

Microwave integrated-circuit technology-a survey

The present-day status of microwave integrated circuits (MICs) is reviewed. Different microwave circuit techniques are discussed and compared, with examples presented throughout. Material technology for substrates, conductors, dielectrics and resistors is described. The design data and technology for the fabrication of distributed- and lumped-element circuits are presented with illustrations of fabrication techniques. Some lumped and distributed circuits are compared with regard to both design and performance. A number of areas for future work in MICs are listed.     

Si_(1-x)Ge_x材料和双极型器件的进展

Ｓｉ１－ｘＧｅｘ材料具有许多优良的性质,高质量的应变外延层可以把能带工程的概念引入到Ⅳ族器件之中。外延Ｓｉ１－ｘＧｅｘ基区的异质结双极型晶体管（ＨＢＴ）获得了优良的性能,并且,其具有可以同硅工艺兼容的优点,把Ｓｉ１－ｘＧｅｘ同Ｓｉ集成的ＢｉＣＭＯＳ工艺取得了很大的发展,已经达到了工业应用的水平。Ｓｉ１－ｘＧｅｘ工艺的发展,电路速度的提高,也促进了微波集成电路的进步,提高了ＳｉＭＭＩＣ的应用频段。从目前的发展现状来看,已经达到了在射频（ＲＦ）通信中广泛应用的阶段。