面向ASP页面资源的细粒度访问控制方法研究

Web网页的访问控制是保证网页信息安全性的重要途径。通过对ASP(Active Server Pages)页面结构的分析,研究了ASP页面中资源的分类并给出了各类资源的表示格式,设计了面向ASP页面资源的细粒度授权策略,基于ASP的页面结构提出了一种细粒度访问控制方法。实验结果表明该方法能有效的控制用户对ASP页面资源的访问,为授权提供方便,具有较好的通用性。     

电信ASP平台中统一安全认证系统的设计和实现

本文论述了上海电信ASP(application service provider)商用平台中统一安全认证系统的设计原则和方法.安全认证系统,是在互联网的应用或服务环境中,对虚拟网络身份可信度进行管理的安全服务体系.安全认证系统为管理分布式互联网的用户标识、角色和安全提供了基础结构,实现统一用户管理、集中访问控制、身份认证和应用授权、单点登录(single sing on,SSO)、用户访问策略与保密、有效的身份管理和审计等核心服务.上海电信ASP商用平台集成了跨行业的多种应用系统,兼容各种已有的和未来新的技术标准,能适应多种用户、角色及数据模型需求,符合多种应用管理策略的集成要求.安全认证系统能够使ASP商用平台实现"统一管理,共享资源;统一认证,灵活扩展;统一授权,运维安全;统一规划,降低风险".     

基于信任协商的开放系统授权服务模型的设计

提出了一种第三方的授权服务模型,对现存的信任协商系统起到支撑作用.模型作为一个授权代理,在实体使用信任协商确定一个适当的资源访问策略后,可以在一个开放的系统中发布访问资源的令牌.模型的体系结构设计允许集成新的信任应用程序,也可以间接集成现存传统的应用程序.讨论模型、模型使用的通信协议的设计和实现,以及它的性能.     

网络化制造ASP平台的研究与实现

ASP（ApplicationServiceProvider,应用服务提供商）是Internet与传统外包服务提供商及增值销售商的有机结合体。它采用租赁方式为用户提供全面实用、价格低廉的应用服务,使用户能更专注于自己的核心业务。本文在研究ASP国内外发展现状及存在问题的基础上,结合其特点及优势,提出了制造企业和ASP服务模式相结合的网络化制造ASP应用服务平台的体系架构,以解决制造业信息化的问题。     

一种新型的ASP集成应用方案的实现

本文针对中小企业现状和应用软件的特点,提出了一个ASP(application service provider,应用服务提供商)体系结构模型,并对基于终端服务和基于网络封包认证两种ASP应用方案进行了分析比较,给出了基于SPI(服务供应商接口)的网络封包截获加密认证的ASP实现方案.     

支持云代理重加密的CP-ABE方案

针对现有的面向CP-ABE(Ciphertext-Policy Attribute-Based Encryption)的代理重加密方案因代理方可以解密代理重加密密文且可以任意修改访问策略而难以支持云代理重加密的问题，本文提出支持云代理重加密的CPABE方案即CP-ABE-CPRE(CP-ABE Scheme with Cloud Proxy Re-Encryption)方案.该方案利用版本号标识不同阶段的私钥和密文来支持属性撤销，只有在用户私钥版本号和密文版本号相匹配且用户属性满足访问策略时，用户才能解密密文.当撤销用户属性时，云服务器无需修改访问策略就可以更新被撤销属性对应的保密值.该方案还通过懒惰更新和批量更新减少密文和用户私钥更新次数，提升更新效率.理论分析和实验结果分析都表明，CP-ABE-CPRE在计算开销和存储开销上均优于相关已有方案.安全性分析表明，CP-ABE-CPRE能够对抗针对性选择明文攻击（sCPA, selective Chosen Plaintext Attack）.     

微软SAAS策略帮助运营商增加收益

SAAS(software as a service,服务即软件)是一种创新的软件应用模式,从ASP(application service provider,应用服务提供商)模式演变而来.在这种模式下,用户不需要购买软件,只需向服务提供商租用基于Web的软件,来对企业经营活动进行管理,且无需对基础设施和软件进行维护,由服务提供商全权管理和维护软件.简单来说即是一种软件应用提供商通过互联网向客户提供服务的模式.     

基于.NET的身份验证和角色授权模型的研究与实现

为了提高用户身份认证和授权管理的灵活性，从Web应用系统的安全性角度出发，讨论了一种在．NET Framework下保证应用程序安全性的身份验证和授权模型，并给出了模型的具体实现方法。该模型利用Forms身份验证方法对用户的身份进行鉴别。在授权处理上，模型结合统一资源定位（Uniform Resource Locator，URL）授权模式和用户所具有的系统角色，分别从页面级和页面操作级对用户的访问进行控制。该模型在企业局域网环境内能够提供比较灵活的身份认证和基于角色的授权服务。实际应用表明，基于该模型的Web应用系统能够对用户的访问进行有效的控制，从而保证了系统的安全性。     

基于ASP.NET的Web应用程序安全性的探讨

目前网站的绝大部分资源对浏览者是开放的,但有些信息是特别针对某些用户的,只有特定权限的用户才能访问,因此,Web应用程序安全性便是热点研究问题.介绍了基于ASP.NET的Web应用程序安全性的验证、授权和模拟等处理程序的实现技术与方法.     

一个基于网格资源超市的计算网格资源管理模型

在现有的基于经济模型的网格资源管理方法中,用户共享资源访问一般经由网格用户代理实现,而资源提供者将资源交给网格资源代理处理,网格用户代理通过网格资源经纪访问网格资源代理,获取共享资源信息并使用共享资源。这类方法制约了用户直接选择使用共享资源,也限制了用户共享资源的范围、延长了作业运行周期。文章给出的基于网格资源超市的计算网格资源管理模型、共享资源访问流程及网格资源管理分配策略,较好地解决了这几个问题。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.