二极管抽运Nd∶YAG薄片激光器研究

报道了采用脉冲二极管抽运的高功率薄片激光器。通过合理设计泵浦光四通薄片增益介质面泵浦耦合系统,实现了泵浦光在薄片增益介质的均匀泵浦;通过实验实现了1.2 kW的激光输出,光-光转换效率25%。     

端面抽运板条放大器抽运均匀性和热效应模拟

为了使激光二极管抽运的全固态激光器能够得到高光束质量、高功率的激光输出,对激光介质的温度分布和热透镜效应的研究很重要。利用ZEMAX软件的非序列模块,根据光束追迹的方法模拟了端面抽运结构下,高功率二极管抽运激光放大器的抽运光在增益介质中的光场分布情况。结果表明,此抽运方式下光场分布均匀。将激光介质中吸收的抽运光体功率密度分布结果代入LAS-CAD软件,计算出在种子光未注入和注入情况下,抽运功率为2400W时,增益介质最大温差分别为68℃,54.7℃以及最大热应力分别为90N/mm2,67N/mm2,因此当抽运功率小于2400W,运转的全过程对于激光增益介质是没有威胁的。该模拟结果对于高功率二极管抽运板条激光放大器的设计具有一定参考价值。     

掺钛蓝宝石晶体激光放大实验研究

报道了掺钛蓝宝石晶体激光放大实验研究，实验中得到最大的单程放大和双程放大增益分别为１４．７６和２６．３１，对应双程放大的增益系数为１．８１ｃｍ－１，并由此推算出掺钛蓝宝石晶体的增益截面为２．７４×１０－１９ｃｍ２，饱和能量密度为０．９３Ｊ／ｃｍ２．并给出不同的泵浦能量密度所对应的最佳放大介质长度。实验表明小信号近似下，放大增益只与泵浦功率密度有关．与注入种子能量无关。实验还测量了掺钛蓝宝石晶体对不同波长种子光的放大增益。     

热容模式下片状激光介质瞬态温度及热应力分析

为了研究激光介质热畸变对固体热容激光器的影响,数值计算了高功率激光二极管阵列抽运片状激光介质的瞬态温度场和热应力分布。结果表明,在相同的抽运功率密度下,激光介质中的温度分布和热应力分布不仅与激光介质几何构型及抽运光空间分布有关,还与抽运光斑在介质表面的填充因子密切相关。当抽运光斑未充满激光介质时,介质的表面靠近边缘处会出现大的拉应力集中,并且介质表面的最大轴向位移和最大拉应力随光斑填充因子增大而增大;而当抽运光充满介质时,表面是压应力,较小的拉应力存在于介质内部。     

核泵浦~3He-Ne激光增益实验

在稳态核反应堆上,测定了热中子辐照下,~3He-Ne激光体系(P_(He:P_(Ne)=5:1,P_总=4×10~4Pa)的增益系数(丸=632.8nm,跃迁3S_2-2P_4)。当热中子通量为2×10~(12)n/cm~2·时,其增益系数为1.7×10~(-2)/cm。研究了增益系数随热中子通量的变化关系,讨论了温度对增益的影响。实验表明核泵浦~3He-Ne体系有可能实现激射。     

氩离子激光泵浦钛宝石输出超过1W

最近中科院物理所利用连续波氩离子激光泵浦φ6×12mm钛宝石棒,采用四镜Z型腔,所用宽带介质膜中心波长为750nm,当泵浦光12W时,总输出超过1W。采用双折射滤光片调谐时,获得730～810nm     

短蒸气室自加热碱金属激光器输出特性

短蒸气室自加热碱金属激光器的原理是利用未被增益介质吸收的抽运光加热碱金属蒸气室。基于三能级速率方程,建立了半导体激光双端抽运碱金属激光器的理论模型,研究了增益介质长度、蒸气室温度和抽运源线宽等参数对短蒸气室自加热碱金属激光器输出激光的影响。研究结果表明,在普通外腔半导体激光器抽运下,增益介质长度为2mm时可以实现瓦级激光输出,选择较高的抽运光功率可提高自加热碱金属激光器的输出功率。该研究结果将为自加热碱金属激光器的实验提供理论基础,并可进一步拓展小功率碱金属激光器的应用领域。     

Ce∶KNSBN光折变光纤两波耦合特性研究

研究了掺铈钾钠铌酸锶钡 (Ce∶KNSBN)光折变光纤“扇”特性及两波耦合的基本特性。通过实验发现 ,当入射光的入射角为 8°左右时 ,“扇”最小 ,这与块状晶体有根本的不同。在信号光与抽运光的入射夹角 2θ小于 11°时 ,两波耦合增益随入射夹角的增大而增大 ,而当入射夹角大于 11°时 ,两波耦合增益随着入射夹角的增大而迅速减小。给出了在各个不同的入射夹角下 ,两波耦合增益中透射的信号光的时间特性曲线。两波耦合增益随信号 抽运比的增加而增加 ,在入射夹角为 8° ,信号 抽运比为 1∶10 0 0时 ,两波耦合增益达到了 77,比块状晶体相应条件下提高了 4倍。用两波耦合的理论公式对增益随信号 抽运比的实验数据进行了拟合 ,二者相符     

LD侧面抽运的Nd∶YAG激光器抽运均匀性研究

通过对激光二极管 (LD)侧面抽运激光介质的分析研究 ,建立了二极管侧面抽运激光介质所吸收的抽运光功率分布的数学模型。采用光线追迹法模拟计算出单个二极管在不同抽运参数下直接抽运激光棒时 ,激光棒所吸收的抽运光功率的分布。比较了介质的吸收系数和二极管到激光棒距离的不同给抽运的均匀性带来的差异。计算了在有冷却系统的条件下 ,多个二极管阵列抽运时的抽运光功率分布 ,得到了较好的抽运均匀性     

热容模式下片状激光介质的热畸变

利用有限元数值方法,模拟计算了热容模式下片状激光介质的瞬态温度分布和热应力分布及其波前畸变和应力双折射。结果表明:激光介质中的温度分布和热应力分布与抽运光斑及介质的几何形状密切相关。当抽运光斑未充满激光介质时,介质的表面靠近边缘处会出现大的拉应力集中,并且介质中最大拉应力和表面的最大轴向位移随抽运光斑尺寸缩小而增大;而当抽运光充满介质时,表面是压应力,较小的拉应力存在于介质内部。介质变形和热光效应(折射率随温度变化)是产生波前畸变的主要原因。热应力双折射对光束产生较大的退偏作用,从而影响激光器的输出性能。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.