MAX5481在夫兰克-赫兹实验仪中的应用

提出了一种基于数字电位器MAX5481的夫兰克-赫兹实验仪设计方案;介绍了数字电位器MAX5481的接口、控制方式及应用方案.该方案为数字电位器在模拟电路中替代机械电位器提供了借鉴.     

智能电位器检测仪的研制

最近研制成功的WD4002型电位器检测仪是根据目前电位器生产和检测中的迫切需要而开发的。它综合运用了现代先进的电子设计技术和计算机技术,实现了对电位器的高阻、电压比和连续性的高精度测量,是当今先进的电位器检测仪。本文概括介绍了该仪器的测试原理、硬件系统概况、特殊的设计技术和系统的软件功能。     

微波检波信号增益自动控制方法研究与实现

在智能微波开关信号解调电路中采用了三级程控放大电路,各级放大电路的增益由多路SPI数字电位器MCP4351控制。测量电路对灵敏度调节电位器输出电压进行测量,在保证各级输出不失真的情况下,根据约束条件分配测量结果所对应的总增益,并形成增益分配表。其中,第二、三级增益按照线性法分配,第一级增益按照约束方程计算得出。解调时,系统控制核心MSP430F149查增益分配表得到数字电位器的调整值,并按照调整值调节电位器的阻值,实现增益的自动控制。该方法不需要单片机进行大量复杂的增益计算过程,节省运行时间和程序存储空间。     

基于STC89C52单片机的自动电阻测量仪

用于测量电阻的仪器很多,但大都需要手动换挡,如果测量任务繁重则会大大降低测量效率,基于此,设计了一种以STC89C52作为核心控制器,并配以采集电路、档位切换电路、键盘电路、显示电路、报警电路等测量电阻及电位器的电阻测量仪。该测试仪具有自动切换量程、电阻筛选、超值报警等功能,可以对0~10M的电阻进行测量并显示测量结果,测量精度达到1%,同时还可以对电位器进行自动测量并绘制电位器的测量曲线。     

自动调整漂移的磁通计

磁通计是利用RC电子积分原理测量磁通量的精密仪器，应用在磁性材料及器件的生产加工、磁电技术、磁性测试技术以及测控技术等领域。本文介绍了由微控制器控制数字电位器替代多圈线绕模拟电位器实现，解决了目前的模拟积分式磁通计的漂移问题。     

带SPI接口的数字电位器测试方法研究

数字电位器亦称数控可编程电阻器,是一种代替传统机械电位器(模拟电位器)的新型CMOS数字、模拟混合信号处理的集成电路,它提供了两种工作模式.自动测试系统是集成电路大规模生产测试环节必需的系统设备,利用自动测试系统可以实现测试数字电位器在不同工作模式下的特性参数,实现与传统的测试方式相比,更加快速准确地实现数字电位器特性...     

同轴双连电位器的测量

同轴双连电位器相当于两个单连电位器的综合,且两个电阻体的阻值(总阻值)相等,各自有三个接线焊片。以下介绍同轴双连电位器的两种测量方法。(1)如图(a)所示。根据同轴电位器的标称阻值选择好万用表量程,调零后先分别测量电位器A_(1、3_两端及B_(1、3)两端的阻值,这两个阻值应相等,并且等于被测同轴电位器的标称阻     

数字电位器在雷达多通道接收机中的应用

近代雷达多通道接收机采用机械电位器进行通道间幅度校准,机械电位器不能在舰载机的湿热及高震动条件下稳定可靠的工作,为避免这一缺点,拟采用数字电位器替代机械电位器。在分析了现有机械电位器应用电路的基础上,提取出数字电位器性能指标要求,然后使用数字电位器模型进行了分析、仿真。最后选用X9312进行了常温试验和高低温试验,实验结果表明数字电位器可以替代机械电位器进行多通道接收机幅度较准,从而使改进后的多通道接收机适用于舰载机的工作环境。     

数字电位器的应用拓展

数字电位器比机械式电位器更能改善系统的可靠性并提高系统的灵活性,故可用于电源校准、音量控制、亮度控制、增益调节、光模块的偏置以及调制电流的调节等。文中给出了基于数字电位器的车灯调节光电路,同时给出了采用数字电位器来构建电压／电阻转换、精确控制升压型DC—DC转换器的输出、实现对数调节,以及利用数字电位器实现数控低通滤波功能的具体方法。     

示波器应用(一)——用示波器测电位器动态噪声

在要求较高的设备中,特别是在电子仪表中,常要求使用动态噪音较小的电位器,若用万用表测量电位器时,一般只能测量其阻值和调节状况而不能直接测出其噪声的大小。现介绍一种用示     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.