对中国科普历史研究的思考

本文在前人研究的基础上,从现代科普的特点、属性以及发展趋势的角度出发,对中国科普历史研究中的一些问题进行了探讨和思索,以期为中国科普研究史进行一些梳理。     

科普场馆青少年科学教育沙龙

2008年12月2日,中国科普研究所举办了科普场馆青少年科学教育沙龙,来自博物馆科学教育、青少年科学教育、科普研究以及科普产品制作等领域的30多位学者参加了沙龙。中国科普研究所所长任福君首先介绍了科普研究所在科普场馆展教功能、展教手段的监测评估方面所做的研究工作。与会专家学者围绕如何在科普场馆开展活动来提高青少年科学素质的问题,进行了广泛的讨论交流,此次沙龙为科学普及、科学教育和科普场馆研究领域学者的广泛交流搭建了重要的学术平台。     

技术时代中国科普的使命

本文以历史的视角研究中国科普的使命。通过对历史上的科普及其科技背景的考察,可以看出科普同科技的发展阶段相适应、和科技的命运相关联。在技术时代,科学技术的新特征使科普发生了新的变化。在分析了当代中国的科技、文化背景后,文章提出了技术时代中国科普的使命。     

创刊词

作为中国科普研究领域中目前唯一的学术刊物,《科普研究》从20世纪80年代初开始,至今已经走过了20多年历程。这些年来,在这本科普学术期刊上发表的上千篇科普理论和实践探索方面的文章,概括地反映了中国科普理论界的思想发展历程和对科普的认识发展过程,在科普研究领域产生了十分重要同时也非常有益的影响。20世纪80年代,作为内部发行的学术期刊,《科普研究》所发文章侧重探讨的是科普创作的理念和方法,以及科普研究、科普活动等相关话题。80年代末和90年代初,《科普研究》开始大量译介国外的科普研究成果和重要的科普文献,如英国皇家学会鲍…     

搭建科普研究资源平台、促进科普事业发展

文章探讨了在实施《全民科学素质行动计划纲要》过程中搭建科普研究资源平台,促进科普理论研究发展的目的、意义;提出了中国科普研究所在建设科普研究资源平台过程中拟采取的一些措施和方法。     

科普公益广告研究———综述、概念与发展

近年来,科普公益广告在国内开始出现并得到部分地方的重视与支持,但对该问题的理论研究在国内仍属 空白。本文梳理了中国对于科普公益广告的相关研究以及科普公益广告在国内的实践历程,并与国外科普公益广告 的研究与实践加以对比,得出中国当下科普公益广告发展不足的现状,并对其加以分析,提出相关建议。     

新媒体时代背景下的科普专家谈——《科普研究》学术沙龙（第5期）纪要：五位一体的中国社会主义建设事业中的科普与创新关系

在新媒体时代背景下的中国的科学传播领域,互联网、手机等新兴媒体正在使中国科学传播传统模式发生革命性的改变,自媒体、全媒体时代特征正日益彰显,在我们当前所处的媒体革命时代如何进行科学传播是一个重大的理论和实践课题,许多问题摆在了科普工作者面前。基于这一背景,围绕“新媒体时代背景下的科普”主题,在中国科普研究所的大力支持下,《科普研究》编辑部主办了第5期《科普研究》学术沙龙。本期沙龙邀请来自实践工作和理论研究领域的专家学者汇聚一堂,共谈媒体革命时代背景下的科普发展。     

《科普研究》学术沙龙（第5 期）掠影

2013年9月6日下午,《科普研究》编辑部主办的《科普研究》学术沙龙(第5期)在中国科普研究所会议室召开,沙龙主题是"新媒体时代背景下的科普"。本期学术沙龙由中国科普研究所副所长、《科普研究》编委会副主任赵立新主持,10位受邀的嘉宾在沙龙中作了学术报告或发言。在近4个小时的沙龙中,来自国家行政学院、科学技术部、央视动画有限公司、中国科协信息中心、北京市科学技术情报研究所、科普网站果壳网、中国科学院计算机网络信息中心、北京邮电大学、中国科     

“科普理论与政策重点方向及未来发展”专家笔谈

科普理论的内容包括科普的概念与性质特征、科普的发展历史、科普的对象与内容、科普的功能、科普的渠道与政策、科普的载体、科普队伍建设、科普设施建设与管理、科普工程组织、科普效果评估、科普特点等,而科普政策研究又是一门交叉科学,其知识基础较广,需要从政治科学、科学学、经济科学、管理科学等方面吸取营养,以之作为理论分析的工具。因此如何对科普理论研究进行深入的探讨,为科普政策制定提供一套进行科学分析的系统方法,既不局限于西方的理性分析传统,又能着重于研究政策制定系统与政策制定过程的改善。为此在2014年4月9日,中国科普研究所举办了"科普理论与政策研究重点方向及未来发展"主题研讨会,十余位专家学者发表了对科普理论研究的理解与认识,研讨了科普政策研究的重点和未来趋势。结合科普研究所的特点,分析了其在科普理论与政策研究上的独特优势,以及未来开展研究的方向。     

新媒体时代背景下的科普专家谈———《科普研究》学术沙龙（第5 期）纪要

在新媒体时代背景下的中国的科学传播领域,互联网、手机等新兴媒体正在使中国科学传播传统模式发生革命性的改变,自媒体、全媒体时代特征正日益彰显,在我们当前所处的媒体革命时代如何进行科学传播是一个重大的理论和实践课题,许多问题摆在了科普工作者面前。基于这一背景,围绕"新媒体时代背景下的科普"主题,在中国科普研究所的大力支持下,《科普研究》编辑部主办了第5期《科普研究》学术沙龙。本期沙龙邀请来自实践     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.