条纹反射法测量镜面手机外壳多尺度三维形貌

对基于条纹反射的镜面物体三维形貌测量进行了研究,测量并分析了镜面手机外壳不同横向空间分辨率的三维形貌。由计算机控制液晶显示屏生成正弦条纹图像,用CCD相机记录由待测镜面物体反射的变形条纹图像并进行相位解调。相位分布受物体表面梯度调制,对相位数据进一步求导和积分可以分别得到表面曲率和高度分布。通过带通滤波分析,可以分解得到样品不同横向空间尺度的三维形貌,为加工工艺改进提供定量依据。对镜面手机外壳的测量结果表明,本文方法具有很高的灵敏度和很大的动态范围,高度方向分辨率可达亚μm量级。在普通实验条件下,能够同时得到表面形状缺陷、喷漆质量以及微观痕迹的定量数据;曲率分布数据特别适合于对任意形状镜面物体表面形貌瑕疵的检测定位。     

激光光栅显微投影法表面微观形貌测量系统的研制

本文研制了基于激光光栅显微投影法的表面微观形貌测量系统。该系统由激光器 ,CCD ,两个显微物镜 ,图象采集卡 ,计算机和数据处理软件组成。两个显微物镜一个用来将光栅进行缩小投影到被测物体的表面上 ,形成被被测物体表面高度所调制的条纹 ;另一只显微物镜则将被调制的条纹图像成像到CCD的靶面上 ,CCD采集的图像输入到计算机中进行相关计算而得出被测表面的微观形貌。本文介绍了该系统的测量范围和分辨率计算方法 ,并对实验数据进行了可靠性分析。结果分析表明 ,该系统能可靠地测量物体的表面微观形貌。     

无相位去包裹的微分法三维形貌测量

提出了一种无需相位去包裹的微分算法,应用于 投影栅三维形貌测量。首先由计算机设计并生成 4幅四步相移正弦条纹图,利用DLP投影仪将其投影到待测物体上;然后由CCD相机采集受待 测物体面型调 制的变形光栅条纹图。再利用4幅四步相移变形条纹图,经数值运算求得沿水平和垂直方 向上待测物体 相位的偏导数,而相位偏导数的积分过程相当于求解泊松方程,于是利用离散余弦变换(DCT )求解泊松方程就可得 到待测物体三维形貌对应的相位数据,从而重构待测物体的三维形貌。测量结果表明,相位 解调的 标准差小于0.031rad,验证了本文方法的有 效性。     

基于一维经验模态分解的非等步在线三维面形测量

提出一种基于一维经验模态分解(EMD,empirical mode decomposition)的像素匹配方法,应用于在线三维面形测量。首先由计算机产生一固定正弦光栅条纹图,利用DLP投影仪投射到被测物体表面,物体在线运动将产生等效相移,由CCD相机采集5帧任意步长的受物体面形调制的变形条纹图。由于物体的运动使得几帧变形条纹图中的物体像素不对应,因此需要对变形条纹图进行像素匹配。通过对采集到的5帧变形条纹图进行一维EMD,可以得到与待测物体形貌变化一致的模态图像分布,然后通过大津法对其进行二值化处理,并截取可靠性较高的部分作为像素匹配模板进行像素匹配,计算出相应的等效相移量。最后利用五步非等步相移算法解相,并恢复出被测物体的三维形貌。计算机仿真与实验验证了本文方法的有效性。     

基于二维经验模态分解的五步非等步在线三维检测

提出一种基于二维经验模态分解(2DEMD)的像素匹配方法,并结合五步非等步算法应用于在线三维面形测量中。将一正弦条纹投影到在线匀速运动的待测物体上,物体运动产生等效相移,在一个条纹周期范围内任意采集五帧变形条纹图。采用2DEMD方法对变形条纹图进行分解,可以得到与待测物体形貌变化一致的模态图像,通过大津法对其进行二值化处理,并截取可靠性较高的区域作为像素匹配模板进行像素匹配,使各帧条纹图中物点一一对应并计算出相应的等效相移量。再利用五步非等步相移算法解相可得到截断相位,采用相位展开算法得到连续相位,利用相位高度映射公式可恢复出被测物体的三维面形。计算机模拟与实验验证了该方法的有效性。     

激光剪切干涉三维形貌测量

针对物体表面的三维形貌测量问题,提出了一种基于激光剪切干涉条纹的三维形貌测量方法。该方法利用激光剪切干涉原理产生密集的干涉条纹,将干涉条纹阵列照射到待测表面。利用四步相移法和解包裹算法求解被测物体表面的连续相位,进而获取曲面表面高度信息,最后建立被测物体三维形貌。本文对楔形薄片和木块进行了测试,初步实验结果证明了该方法原理的可行性。该方法可以与显微镜相配合,进一步发展可用来测量微结构3D形貌,在微测量领域具有很大的应用前景。     

基于单频四步相移条纹投影的不连续物体三维形貌测量

提出了基于单频四步相移条纹投影的不连续物体三维形貌测量方法。由计算机产生相移步长为π/2的4幅正弦条纹图像,利用液晶投影仪投影到被测物体表面,由CCD相机同步采集获得含有形貌信息的畸变条纹图并保存在计算机中,通过四步相移算法获得条纹相位信息。对于表面形貌不连续的物体,通过4幅畸变条纹图灰度算术和运算并进行二值化处理定位阴影或暗背景,利用二值图像修正解调的相位从而得到正确相位。实验结果验证了本方法的有效性。     

应用三步相移法的三维面形测量

提出一种基于三步非定步相移的三维面形测量方法。首先将投影仪投出的光栅进行预校正,保证投到参考面的条纹为标准的正弦条纹。测量时,由投影仪投影三幅等相移量的光栅到待测物体表面,CCD相机对应采集三帧变形条纹图,由相位计算模型提取相位。最后通过高度映射公式恢复待测物体的三维面形。该方法有较好的抗噪性能,在噪声较大情况下,仍能进行测量,为动态在线测量奠定了基础。模拟及初步实验均验证了该方法的可行性。     

双频虚拟光栅投影三维测量技术

莫尔三维测量中的傅里叶变换轮廓术(FTP)采用单一频率进行测量,存在着由于待测物体高度变化率过大引起的相位解调困难问题。为解决该问题提出了利用双频虚拟光栅投影的三维测量方法。通过双色光干涉同时形成双频虚拟光栅,将双色干涉条纹投影到被测物体上得到被物体形貌调制的变形彩色干涉条纹。变形的彩色干涉条纹经过光学接收系统成像在彩色CCD探测器上。彩色CCD探测器所接收到的是双色光通道复合的变形虚拟光栅图。通过色度学方法对同一幅彩色变形虚拟光栅图的不同色光通道进行分离,并对分离后的双频虚拟光栅调制图进行综合。既兼顾了效率,又有效地解决了被测物体高度变化率过大引起相位解调困难的问题。     

基于结构照明的三维物体识别新方法

提出了一种三维物体的识别方法。将一正弦条纹分别投影到参考物体和待测表面，摄像机得到的是2幅有变形条纹的二维强度像。参考的变形条纹图像和待识别的变形条纹图像，经过联合变换相关(JTC)，得到自相关和互相关输出，最后根据输出的相关峰大小即可判别不同的物体。这种相关识别方法的实质是通过结构照明的方法，构造一个新的识别复函数，物体的高度分布以复函数位相的形式编码于新的识别复函数之中，因此该方法具有本征三维识别的特点。计算机模拟实验证明了这种方法用于三维物体识别的可能性。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.