基于回波的多子带SAR系统载频误差补偿方法研究

为了提高SAR系统的分辨率,在距离向可以通过发射一系列不同载频的窄带信号,通过信号处理的方法实现带宽合成,进而得到等效大带宽信号对应的分辨率。为有效实现带宽合成,要求不同子带回波的载频步进值严格已知,这在某些实际应用环境中,并不能总是满足,因而需要从回波数据中直接估计步进值。该文提出一种基于子带回波数据的载频误差估计与补偿方法。该方法基于压缩后子带回波数据多普勒相位与载频的关系,对子带图像进行干涉处理,提取差分相位,并利用差分相位沿方位向的冗余进行相干积累,获得以实际载频步进值为振荡频率的单频信号,进而通过频谱分析方法得到误差频率,并对子带间相位误差进行补偿。通过该方法,能够实现子带信号的相干合成,提升了SAR数据成像质量。实验数据的处理结果验证了该方法的有效性。     

强噪声背景下的信号检测

在低信噪比下检测信号的方法备受关注。利用周期谱估计方法能在较低的信噪比下检测信号。本文提出基于小波包去噪的周期谱测量方法。该方法可进一步改善信号的检测能力。文中以相位码信号争以电视为发射信号的无源相干定位系统的回波信号为例，应用小波去噪和周期谱方法进行仿真。仿真结果表明，这种方法能在-21dB信噪比(相位码信号)和-14．5dB信噪比(电视信号)下检测信号。     

调频连续波相干激光雷达的多脉冲频域相干累积研究

针对相干激光雷达在低空、远距离、高动态目标探测等应用场景中存在的弱信号探测问题,基于调频连续波相干激光雷达,采用多脉冲频域相干累积方法提高激光雷达弱回波信号的信噪比。结合调频连续波理论,分析了信号幅度起伏和相位起伏对多脉冲频域相干累积信噪比效果的影响,实验结果表明,经过M脉冲周期的频域相干累积,微弱回波信号对数信噪比可提升10lg M dB,并且信号幅度起伏、相位起伏可导致多脉冲相干累积信噪比低于理想相干累积信噪比,对于均值分别为2.25×10^-4、1.65×10^-4和相对起伏幅度分别为0.69、0.93的回波信号而言,相位补偿后的回波信号在50脉冲周期内相干累积信噪比的误差因子最大为0.57%、0.3%,该多脉冲频域相干累积方法对相干激光雷达在远距离目标探测、微弱信号接收方面的应用具有重要意义。     

基于信号统计特性的超声成像方法

介绍合成孔径聚焦超声成像的基本原理。为进一步提高成像分辨率和信噪比,研究超声回波信号的相关性,根据缺陷信号和噪声信号的不同统计特性,提出一种基于信号相关性分析的非线性合成孔径算法。实验结果表明:与传统的延时叠加合成孔径算法相比,新方法提高了图像的横向分辨率和信噪比。     

北斗二号B1信号捕获方法研究

为了缩短北斗B1信号的捕获时间,提高多普勒频率和码相位的估计精度,针对北斗NH码对差分相干累积值的影响,改进了广义差分相干累积捕获方法。并采用二次频率-码相位捕获法来提高载波多普勒频率和码相位的估计精度。理论分析与仿真实验表明,改进的广义差分相干累积法能够克服NH码的影响。用4个1ms的相干累积值,改进的广义差分法可成功捕获信噪比为-27dB的信号。最后,用实测的北斗数据验证了算法的正确性。     

基于深度学习的红外图像超分辨率重建方法

为了提高红外图像的超分辨率重建效果,提出基于深度学习的红外图像超分辨率重建方法。利用红外图像的反射特性与红外辐射特性建立红外图像的显著性区域检测模型;通过可见光与近红外图像之间样貌差异度水平检测图像的边缘轮廓特征,提取可见光与近红外光融合性特征参数;根据融合层次不同对图像信号级、像素级、特征级、决策级四个维度进行重建,提取图像的边缘、形状、纹理特征;根据特征分布的噪声水平与配准质量,采用深度学习算法实现对红外图像超分辨率重建。仿真测试结果得出,该方法进行红外图像重建的显著性特征检测能力较强,重建后将图像分辨率提升到1 280×960 PPI,模板匹配准确率为49.4%,峰值信噪比PSNR值高于36.34 dB,结构相似度SSIM值高于0.972,重建效果较好,更适合用于特定场景下的红外图像目标特征识别。     

基于ABAQUS的Lamb波椭圆法探伤的仿真分析

以厚4 mm的铝板作为研究对象,研究了兰姆(Lamb)波在铝板中的传播问题。该文结合椭圆法的损伤定位原理和ABAQUS仿真软件对Lamb波在铝板中的传播方式进行研究。通过设置观测点并采集该点Lamb波的信号,计算出健康铝板与损伤铝板的差信号;结合Lamb波的频散特性计算出Lamb波的传播距离,从而定位缺陷位置。研究表明了基于椭圆法的铝板损伤识别的有限元模拟的准确性与可行性。     

OTHR低信噪比下的机动目标检测算法

在天波超视距雷达(OTHR)中,采用短时间相干积累时,可以提高数据率和检测效能,减小电离层污染。但采用短时间相干积累时,目标信噪比往往较低,检测难度较大,而机动目标的多普勒扩展进一步增加了目标的检测难度。传统的机动目标检测算法利用基于高阶模糊函数(HAF)的多普勒补偿算法来提高机动目标的可检测性,但由于HAF多次用到非线性变换,而每次非线性变换都会损失部分信噪比,因此对输入信噪比要求较高,难以适应于更低信噪比环境下的机动目标检测。将机动目标回波建模为三阶多项式相位信号,采用一种低非线性度的运动参数估计方法并结合多普勒补偿算法对目标回波进行处理,仅需要一次相位降阶操作,减少了信噪比损失,降低了对输入信噪比的要求。经过仿真验证,该算法的输入信噪比门限为-3dB,而HAF算法的输入信噪比门限为3dB。     

用单次脉冲非稳腔空间增强探测CARS技术测量火焰温度

采用宽带相干反斯托克斯拉曼散射(CARS)技术测量了甲烷-空气预混火焰温度场分布,并分析了温度测量的不确定度.建立的宽带CARS实验系统采用非稳腔空间增强探测(USED)相位匹配构造,其横向空间分辨率约0.1 mm,纵向空间分辨率约3 mm,该系统能实现10 Hz重复频率测量火焰瞬时温度.采用宽带非稳腔空间增强探测CARS在甲烷-空气预混火焰中获得了单次激光脉冲的高信噪比氮气Q支CARS实验谱,用CARS理论计算软件拟合理论谱和实验谱确定了预混火焰的温度随高度的分布,采用单次激光脉冲的氮气Q支CARS实验谱测量火焰温度的不确定度小于5%.     

基于小波变换相干积累的微弱信号检测

在低信噪比下检测信号的方法倍受关注。本文提出基于小波变换的信号相干积累方法,利用小波变换的子带编码理论,通过在多个子带中进行相干积累。积累后的信号再用周期谱方法进行估计,证明该方法可进一步改善信号的检测能力。文中以脉冲雷达回波信号和相位码信号为例。仿真结果表明,这种方法能在-19db信噪比(雷达回波)和-22db信噪比(相位码信号)下检测信号。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.