TFT-OLED驱动电路的研究

从OLED的发光原理出发,介绍了OLED器件的结构特点和常用的TFT OLED像素电路的结构。利用TFT OLED行列驱动芯片和控制芯片,通过MCS 51单片机的控制来驱动240×320×3点阵的TFT OLED屏,实现大信息量的图形显示。该设计方案所需外围器件少,硬件结构简单,有利于提高系统的运行效率。介绍了驱动模块的功能和硬件接口电路的设计方法,并给出了单片机的软件流程图。     

VGA TFT LCD的驱动电路设计

介绍了VGA TFT LCD驱动电路的设计思想、所使用的行反转驱动方法及其优点、数据驱动器的工作原理和灰度级实现方法以及扫描驱动器的工作原理。详细地分析和计算了公共电极驱动Vcom调节方法,并有效地解决了由于FTF寄生电容引起的电压跳变而导致的图像闪烁问题。     

基于ARM9处理器S3C2440的TFT—LCM驱动平台的设计和实现

介绍了ARM9处理器$3C2440LCD控制器的应用,TFT-LCM外围电路的设计及$3C2440LCD控制器与TFT—LCM之间的硬件电路搭建和软件设计要点。     

改进的OLED像素驱动电路

有机电致发光显示器件(OLED)被认为是LCD最强有力的竞争者.因OLED显示屏的像素驱动电路至少由两个TFT管和一个电容组成,在实际制作驱动电路中,电容面积较大,影响显示屏开口率.基于对像素驱动电路的深入研究,提出一种改进的像素驱动电路,改进后的电路面积较小.通过仿真验证和理论推导计算证明该驱动电路不仅性能稳定而且可以明显地提高显示屏的开口率.     

12.9英寸高分辨率多色TFT—LCD

研制出总控制台(EWS)使用的12.9英寸多色TFT—LCD,它具有1280×3(R,G,B)×1024个象素,实现了高分辨率显示。为了得到高质量的显示画面,我们就以下内容进行了研究:无闪烁、无交叉干扰TFT—LCD的设计;驱动技术;可以将EWS信号转换成TFT—LCD 信号的信号转换系统。     

有源OLED全p-TFT屏上驱动电路设计

为了提高显示屏的成品率,降低成本,提出了一种由全p沟道TFT构成的屏上驱动电路。基础电路部分包括反相器和移位寄存器,屏上驱动电路主要是行驱动电路和列驱动电路。行驱动电路和列驱动电路基本上都是由反相器和移位寄存器构成,全部采用p-TFT来构成驱动电路。该驱动电路工作正常,能够实现CMOS驱动电路的功能,驱动OLED器件正常发光。通过仿真验证和理论分析表明该驱动电路不仅性能稳定而且成本低、成品率高、外接引线少及外围驱动电路复杂性低。     

一种非晶硅薄膜晶体管栅极驱动电路

非晶硅薄膜晶体管(Amorphous Silicon Thin Film Transistors,a-Si TFT)具有器件性能均匀、成本低、适用于大面积显示的优点,是平板显示技术的主流基板材料。近年来由于集成栅极驱动电路(Gate Drivers Integrated in Array,GIA)在非晶硅薄膜晶体管液晶显示器中的应用,不仅能节省工艺步骤,降低成本,而且边框美观对称,使非晶硅薄膜晶体管液晶显示屏更加受到消费者的欢迎。但是由于非晶硅电子迁移率相对较低,栅极驱动电路仍占用较大空间,尤其是随着显示产品解析度的增加,产品边框变窄,驱动电路的版图空间变小,导致驱动电路的设计越来越困难。文章提出了一种新型栅极驱动电路,有效提高了a-Si TFT GIA的驱动能力,降低了版图面积,增加了a-Si TFT在高分辨、窄边框产品市场的竞争力。     

玻璃衬底上MIUC Poly-Si TFT显示驱动电路

以高性能的金属诱导单一方向横向晶化多晶硅薄膜晶体管(MIUC poly-Si TFT)为基础,研制出性能能满足AM-LCD和AM-OLED要求、版图和象素尺寸适配、制备工艺和象素电路兼容的多晶硅TFT行扫描和列驱动电路.该行扫描电路工作电压为3.5-10V;当工作电压为5V、负载电容为22pf时,下降沿约为150ns,上升沿约为205ns,最高工作频率在1MHz以上;列驱动电路工作电压为3.5-8V;当工作电压为5V、负载电容为22pf时,上升沿约为200ns,信号衰减率为15%(64μs扫描周期),最高工作频率达到4MHz.将该MIUC poly-Si TFT多晶硅行扫描、列驱动电路和有源选址电路集成到同一基板上,制备出象素数为80×RGB×60、动态显示效果良好的全集成型LCD屏样品.     

LCD的通用驱动电路IP核设计

本文介绍了一种新型的LCD驱动电路IP核的总体设计,采用自顶向下的设计方法将其划分为几个主要模块,分别介绍各个模块的功能,用VHDL语言对其进行描述,用FPGA实现并通过了仿真验证。该IP核具有良好的移植性,可驱动不同规模的LCD电路。     

一种小规模LCD驱动电路IP核的设计

介绍一种全新LCD驱动电路IP核的总体设计。该IP核具有优异的移植性,能使LCD驱动电路的规模可调,而且通过微调就能驱动多数小规模LCD。采用自顶向下的设计方法将其按功能划分为几个主要模块,并分别介绍各个模块的功能。用VHDL语言对LCD驱动电路IP核进行描述,并用FPGA进行系统实现,最后通过仿真验证。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.