基于超表面的超宽带线极化转换特性研究

极化转换在太赫兹调制领域具有重要的研究意义和应用价值。传统的极化转换器件存在尺寸大、集成度低、损耗高、带宽窄等诸多不足。该文提出一种对称“山”型超表面共振单元结构,可用于实现反射、透射极化转换器件的设计。其中反射型器件实现了极高极化转换率的宽带线极化转换,透射型器件实现了相对带宽达135.5%的超宽带线极化转换。采用各向异性理论分析了反射型器件产生极化转换的机制,并基于多重干涉理论对共振结构阵列与金属背板构成的类F-P腔进行了计算,计算结果与仿真吻合较好。进一步使用正交线栅类F-P腔与共振结构阵列,构成透射型器件,并深入分析了共振单元结构不同部分对宽带极化转换的贡献,讨论了不同结构形成的极化转换频段间的耦合方式。研究结果为基于固定相位差的超宽带偏振极化转换器件的实现以及超表面类F-P腔应用提供了新的思路。     

基于透射型超表面的宽带线圆极化转换器设计

提出了一种工作在S波段和C波段的宽频透射型线-圆极化波转换器,其由五层超表面级联而成。超表面正面的金属拓扑结构为对称U 形,背面为连续螺旋。当线极化波垂直入射时,所提出的线-圆极化转换器在2.5~5.6 GHz 内插入损耗小于0.9 dB,透射波轴比小于3 dB,实验结果和仿真基本一致。该极化转换器可用于空间电磁波的极化转换,在大容量微波中继通信领域有一定的应用潜力,对于其他宽带、高透过率线圆极化转换器的设计也有一定的借鉴意义。     

双频太赫兹圆极化吸波与异常反射手性超表面

本文提出了一种工作在太赫兹频段的双频圆极化手性吸波和异常反射手性超表面，通过合理组合两种手性结构，实现在两个频段相互独立的圆极化手性吸收和异常角度的圆极化转换功能.该双频太赫兹手性超表面在2.53 THz处对左旋圆极化波的吸收率为96.3%，对右旋圆极化波实现同极化的反射；在3.43 THz处对右旋圆极化波的吸收率为90.9%，而对左旋圆极化波表现为同极化反射功能.本文进一步通过连续旋转单元图案引入几何相位，实现了2π反射相位全覆盖.组阵后的手性超表面在两个工作频点各自吸收特定旋向的圆极化波，而对正交极化的圆极化波分别发生约±20°的保手性异常反射.这种基于手性超表面的双频太赫兹多功能器件有望应用于电磁能量收集、极化转换器、手性传感等领域.     

各向异性超材料中太赫兹波的偏振转换

各向异性超材料可以控制太赫兹波的偏振态,实现入射太赫兹波的偏振转换。为了获得非手性各向异性超材料的透射响应与本征偏振复透射系数的关系及其入射偏振依赖性,在太赫兹时域光谱系统中测量了等臂长L形结构超材料在不同偏振角下的正入射透射谱,获得并分析了透射太赫兹波的偏振转换率和偏振态,所得结果与基于琼斯矩阵和坐标变换计算的结果一致。在0.7 THz~1.3 THz频率范围内可实现约20%的偏振态能量转换效率。在L结构和双L结构的偏振转换透射谱中分别观察到了宽带响应和多频共振响应,表明结构改变对太赫兹波透过特性的敏感性和可操控性。所得到的结果可用于太赫兹功能器件的设计、表征和优化。     

卫星电视接收站馈源的快速简便调试

一、概述当下行的卫星电视信号是圆极化波时,为使电波能进入高频头输入端的矩形波导,必须把圆极化波转换为能在矩形波导中传输的线极化波,这就需要设置一个圆-直线极化变换器。圆极化波是由两个等幅正交的线极化波合成的。当要把圆极化波转换为线极化波时,只要将其中超前(或滞后)90°的那个线极化波滞后(或超前)90°,则两个线极化波变为同相。它们合成后,电场矢量不再旋转,从而成为一个线极化波。它的空间取向与原两线极化波相差45°,与移相器的空间位置也相差45°,如     

一款高效率频率选择表面圆-线极化转换器

为了实现圆极化波到线极化波的高效率转换,提出了一种由两种圆极化波调制模块构成的复合结构单元频率选择表面圆-线极化转换器。采用天线-馈线-天线结构设计了左-左旋和左-右旋两种圆极化调制模,并将二者组合形成具有左旋圆极化波接收、左旋和右旋圆极化波同幅同相辐射功能的圆-线极化转换器。仿真与测试结果表明,该极化转换器能够将入射左旋极化波转换成线极化波,3 dB传输系数相对带宽大于19.8%,工作带宽内的圆-线极化转换率大于0.99。该极化转换器具有插入损耗低、设计原理易于推广等优势。     

金属亚波长狭缝阵列结构的太赫兹偏振透射特性研究

利用太赫兹时域光谱技术,研究了金属亚波长狭缝阵列结构的太赫兹透射特性。结果表明,太赫兹波会激发金属狭缝阵列结构的表面等离体波共振,表面等离子体共振产生太赫兹波段超强透射现象。由于表面等离子体共振效应,这种狭缝结构对于透射的太赫兹产生很高偏振度,这些实验结果为制作太赫兹波段偏振器件提供了有益的参考。     

太赫兹超材料极化转换器设计及其特性分析

提出了一种反射型太赫兹超材料极化转换器.该极化转换器结构单元由典型的三层结构组成,上、下两层为金属层,中间为介质层,顶层金属层由一个开口谐振环和一个镂空圆盘组成.研究结果表明:该极化转换器能够将x极化波转换为y极化波,在0.584 0～1.352 0 THz频带上极化转换率大于80％,在0.642 4、0.936 4和1.301 8 THz处极化转换率接近100％.该极化转换器结构简单、便于加工,且能实现宽频带极化转换,在太赫兹波通信、成像等方面有广阔的应用前景.     

基于编码超表面的双向太赫兹多波束调控器件

基于相变材料二氧化钒(VO2)和编码超表面技术设计了一种双向太赫兹多波束调控器件。在0.7 THz下,通过给予器件热激励控制VO2的相变状态,可使器件在反射和透射两种工作模式间切换。器件温度高于68 ℃(VO2相变温度)时,VO2相变为金属态,器件工作在反射模式下,对太赫兹波进行高效反射并将入射波分为多束能量近似、方向不同的波束。在常温下,VO2为绝缘态,器件工作在透射模式,对太赫兹波进行高效透射。对反射和透射两个方向波束的动态调控使器件本身不再成为透射或反射波传输的阻碍。这种对太赫兹多波束的动态双向调控在太赫兹无线通信场景中非常有用。     

金属线栅结构中太赫兹波偏振特性的研究

利用飞秒微加工和磁控溅射技术,在熔融石英衬底上设计并制作了不同结构的金属线栅,通过太赫兹时域光谱系统研究了线栅结构对太赫兹波偏振透射特性的影响,并用有限时域差分法对实验结果进行了模拟验证.分析了影响S和P两个偏振方向太赫兹波透射的物理机制.为制作太赫兹波段偏振器件提供了有益的参考.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.