应用于多源SAR图像匹配的级联SIFT算法

针对多源SAR(Synthetic Aperture Radar)图像几何精处理需要大量离散控制点的问题,文章中提出一种级联SIFT(Scale Invariant Feature Transform)匹配算法.首先,采用大尺度自适应各向异性高斯SIFT(Adapted Anisotropic Gaussian-SIFT,AAG-SIFT)算法进行图像粗配准,大尺度AAG尺度空间可以在模糊不稳定局部纹理干扰的同时,保持图像的结构信息,提高算法的鲁棒性;其次,级联一种局部SIFT匹配算法,在粗配准后图像间进行局部匹配,避免不相关区域内重复纹理对特征匹配的影响;最后,通过尺度和旋转等先验条件筛选匹配点对,保证匹配结果的准确性.对比实验表明,级联SIFT处理可以增加提取同名点的数量和空间分布质量,而且匹配点定位准确.     

一种基于SIFT和区域选择的图像拼接方法

提出了一种基于SIFT和区域选择相结合的图像拼接方法.该方法采用改进的尺度不变特征变换(SIFT)特征提取方法获得图像特征点,并充分利用圆形区域的旋转不变性和互信息量最大原则进行特征点匹配,避免了传统的图像配准算法计算量过大、特征点匹配不准确等问题,最后采用加权平均的方法对图像进行融合.实验表明,该方法对图像间存在的平移、旋转、明暗强度和噪声干扰等都具有良好的鲁棒性,可实现高质量的图像拼接.     

基于改进SIFT算法的弹载电视制导技术研究

以图像匹配技术为代表的弹载电视制导技术具有信息直观的特点,作为非常优秀的图像匹配技术,SIFT算法受到了广泛的关注和深入的研究。针对传统SIFT算法实时性差的问题,本文提出了一种改进的SIFT算法。在提取特征点部分,通过Laplace算子找出图像边缘区域并进行Laplace加权处理,然后利用FAST特征点检测算法提取区域特征点;在生成特征点描述子部分,将传统的128维SIFT算子降为48维,利用改进的SIFT特征描述算子为特征点赋予方向和描述符使其具有旋转不变性;在特征点匹配部分,利用欧式距离提取匹配点对,并采用RANSAC算法提纯匹配点对,得到最优矩阵。实验结果表明改进的SIFT算法在目标旋转、尺度变化等条件下匹配效果良好,与传统SIFT算法相比具有很高的实时性,可以很好地实现图像实时匹配。     

基于不变因子的SIFT误匹配点剔除及图像检索

为解决尺度不变特征变换(SIFT)算法在图像发生旋转和尺度变化时产生的错误匹配问题,提出一种新的算法。根据SIFT提取的关键点信息,利用正确匹配点对间的旋转不变因子和尺度不变因子来剔除SIFT误匹配点,然后对保留下来的特征点进行聚类分析,对目标图像进行识别判断,并通过实验将该算法与双向匹配算法和随机抽样一致性算法(RANSAC)进行比较。实验结果表明,该算法能够有效地剔除误匹配点,且误剔除率低。剔除误匹配点后再进行图像检索,图像的漏检率和误检率都大大地降低了。     

利用特征点配准和变换参数自动辨识的图像拼接算法

提出了一种不同尺度的图像配准与自适应拼接算法.通过特征点匹配与图像间变换几何参数的自动辨识,实现了不同尺度和旋转图像间的匹配和拼舍.利用尺度不变特征点提取算法(SIFT)提取出待拼接图像的特征点,根据互信息量最大原则实现特征点的匹配,然后通过得到的匹配对的几何信息自动辨识出两幅图像之间的变换参数关系,得到反映图像平移、...     

基于局部二进制模式和图变换的快速匹配算法

针对图像匹配在图像拼接、目标识别等领域的应用中尺度不变特征变换（Scale Invariant Feature Transform,SIFT）算法计算复杂度高、实时性较差的问题,提出了一种基于局部二进制模式（Local Binary Patterns,LBP）和图变换（Graph Transformation Matching,GTM）的匹配算法.首先采用SIFT特征检测提取特征点并以特征点为中心取13×13的图像块作为特征区域;然后用本文提出的局部旋转不变二进制模式（Local Rotation Invariant Binary Patterns,LRIBP）描述子对特征区域进行描述产生29维的特征描述向量,降低了描述子的复杂度,并以欧氏距离为度量准则进行初始匹配;最后采用图变换匹配算法剔除误匹配点,从而提高算法的运算速率和匹配精度.仿真结果表明,本文所提算法不仅具有较高的精度和较强的鲁棒性,并且减少了算法的运算量,提高了算法的实时性.     

基于Harris-SIFT特征匹配的图像自动配准算法研究

为解决目前大多图像配准算法存在匹配精度低、实时性差的问题,本文提出了一种基于区域分块提取特征点的自动配准算法。该算法结合了Harris算子与SIFT(Scale-Invariant Feature Transform)算子的优点,先用Harris算子快速提取角点作为图像原始特征点,然后利用SIFT算子的特征描述方法对原始特征点进行描述,获得具有尺度不变性的特征点描述符,最后通过欧氏距离确定匹配点对进行图像配准。实验结果表明,该算法保留了Harris算子和SIFT算子的优点,减少了经典SIF算法提取极值点的时间,并且具有良好的鲁棒性、尺度不变性。本文针对200幅图像进行测验,当发生平移、旋转或缩放变换时,两幅图像间的匹配正确率高达95%。结果表明该算法能高效、高精度的实现图像配准。     

Contourlet-SIFT特征匹配算法

基于局部特征的匹配算法中SIFT(Scale Invariant Feature Transform)算法性能好,应用广泛,但其描述子的维度高、匹配耗时大,对局部相似区域的匹配鲁棒性差.为此,该文提出一种Contourlet-SIFT特征匹配算法.在尺度空间下提取旋转不变特征,对特征及其邻域进行 Contourlet 变换,由各方向子带分解系数的均值和标准差构建全局纹理描述向量,根据向量间欧氏距离的大小进行特征点排序,选取距离较小的前1%的特征再进行 SIFT最近邻比值匹配.实验结果表明该算法对亮度差异大、相似区域多的图像的匹配性能优于SIFT,在保证尺度、旋转、视角等不变性与SIFT相当的同时,匹配速度大为提升.     

基于改进SIFT的图像拼接算法

针对目前基于SIFT的图像拼接算法复杂度较高和特征点匹配不准等问题,提出了一种基于改进SIFT的图像拼接算法。算法利用改进的SIFT进行特征提取,降低了算法的复杂度,同时采用模拟退火算法进行特征点匹配,从而估计出几何变换的参数。实验结果表明,该方法对图像间存在的平移、旋转、明暗强度和噪声干扰都具有良好的鲁棒性,可实现高质量的图像拼接。     

适应于大幅面图像的快速匹配算法研究

基于特征的图像匹配算法具有更广的适用范围和更好的性能表现,但因为其算法更加复杂,使其很难满足实时性,尤其当图像尺寸变大后,这一缺点更加限制了此类算法在实际工程中的应用。针对这一问题,本文提出了一种新的用于大幅面图像的快速匹配算法。算法采用空域分割和频域压缩的方式对图像进行预处理。通过提取目标图中高频信息丰富的区域作为待匹配子图,减小用于匹配的目标图像尺寸;通过小波变换提取源图尺度空间的高尺度表示,压缩SIFT特征点在图像频域中的存在空间。算法采用由粗到细的匹配策略,粗定位待匹配子图在源图中的空间区域后,再次进行细匹配操作,最终实现大幅面图像间的快速匹配。仿真实验表明,新提出的算法极大地提高了大图像匹配的速度,在对部分算法模块进行硬件加速后,新提出的算法甚至可以满足实时性的要求。      

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its