重频Yb:YAG水冷放大器介质热分布测量与控制

为了控制端面泵浦Yb:YAG水冷激光放大器的热效应,对介质的温度分布进行了实验测量,测量了不同口径和厚度的晶体在不同的泵浦频率下的介质表面温度分布。对介质温度分布进行了理论分析,包括泵浦分布、ASE产热等因素对温度分布的影响,得到了影响介质横向温度梯度的关键因素。研究结果表明,泵浦光相对介质的位置对温度面分布有重要影响。提出了提高泵浦填充因子、利用包边吸收ASE光线的方法抑制横向温度梯度的初步设计方案。     

LD泵浦Nd:GdVO4 晶体Cr4+:YAG 被动调Q 激光脉宽控制

采用LD 泵浦技术, 实现了Nd:GdVO4、Cr4+:YAG 被动调Q 1.06 μm 激光运转。通过改变泵浦光束在激光晶体内的分布以及Cr4+:YAG 晶体在腔内的位置, 实现了LD 泵浦Nd:GdVO4 晶体Cr4+:YAG 被动调Q 激光器的脉宽控制。根据由ABCD 矩阵传输理论计算得出的腔内模式半径沿腔轴的变化关系, 考虑激活介质热效应以及泵浦光强和腔内振荡光强的空间高斯分布, 给出了LD 泵浦Nd:GdVO4 晶体Cr4+:YAG 被动调Q 激光的耦合速率方程组, 数值求解该方程组, 获得了脉冲宽度随饱和吸收体在激光腔内位置和泵浦光在激活介质内分布的变化关系, 理论计算与实验结果相符。     

若丹明6G掺合在P（MMA＋MAA）共聚物中的固体染料激光研究

用共聚合方法制备了若丹明６Ｇ掺合在Ｐ（ＭＭＡ＋ＭＡＡ）共聚物中的固体染料样品,对其进行了光谱和激光性能的研究,得到了泵浦光－染料激光转换效率１５％,激射寿命２万脉冲以上的固体染料激光输出,并和其它基体的若丹明６Ｇ固体染料激光进行了比较,对激光染料光和热稳定性进行了讨论。     

深蓝色微型激光器

美国加州Laser Power公司生产的深蓝色微型激光器由激活增益介质、非线性频率耦合晶体和泵浦二极光源(809nm)组成。增益介质是一个掺稀土元素微激光晶体,当用二极管发出的激光激励增益介质时,发射波长为900nm偏振光。非线性倍频晶体与900nm波长光相位匹配。非线性倍频晶体和掺稀土晶体连接在一起形成一个组合腔。二极管发射的泵浦光泵浦组合腔,在腔中产     

LD泵浦Nd:GdVO4晶体Cr4+:YAG被动调Q激光脉宽控制

采用LD泵浦技术，实现了Nd：GdVO4、Cr^4＋：YAG被动调Q1．06μm激光运转。通过改变泵浦光束在激光晶体内的分布以及Cr^4＋：YAG晶体在腔内的位置，实现了LD泵浦Nd：GdVO4晶体Cr^4＋：YAG被动调Q激光器的脉宽控制。根据由ABCD矩阵传输理论计算得出的腔内模式半径沿腔轴的变化关系，考虑激活介质热效应以及泵浦光强和腔内振荡光强的空间高斯分布，给出了LD泵浦Nd：GdVO4晶体Cr^4＋：YAG被动调Q激光的耦合速率方程组，数值求解该方程组，获得了脉冲宽度随饱和吸收体在激光腔内位置和泵浦光在激活介质内分布的变化关系，理论计算与实验结果相符。     

纵向泵浦的激光介质最佳长度

本文导出了纵向泵浦的激光介质最佳长度的数学表达式：Ｌｏｐｔ＝２／αｐ（１－πｈｃｗ＾２／τσλｐＰｐｏ·１／β），介绍了一种确定最佳长度的简单方法，并对某些理论和实验结果作了分析讨论。     

γ射线泵浦的脉冲化学HF激光器研究

γ射线泵浦的脉冲化学ＨＦ激光器研究自发明激光以来，就产生了用电离粒子——电子、质子和核裂变碎片泵浦气体激光介质的想法。电离粒子能将能量有效地转移给稠密的气体介质，但这些粒子的能量输入是不均匀的，因而限制了激光激活介质的体积大小。硬γ射线（Ｅｙ≥１Ｍｅ...     

紧凑型超辐射光泵重水气体THz激光器的研制

研制了一种紧凑型超辐射光泵重水气体THz激光器系统,并通过改变THz激光激活室的长度,对THz信号出射光强度与信号增益长度之间的关系进行了实验研究;利用半经典理论,对两者之间的关系进行了理论计算和求解.实验和理论计算结果表明,THz信号出射光强度跟信号增益长度之间存在非线性的关系.在工作气压、温度和泵浦光强度一定的条件下,激光工作室长度存在最佳值,此时介质对信号光的增益和吸收达到平衡,出射的THz信号光强最大,继续延长介质工作长度将会导致THz输出信号的逐步减弱.根据以上结果可以设计确定相关THz激光工作室的最佳长度.     

热容模式下片状Nd:GGG光学畸变的模拟和实验研究

基于二极管泵浦的固体热容激光器,采用有限元软件ANSYS模拟了泵浦光高斯分布条件下,圆片状Nd:GGG晶体内部的温度分布,计算并分析了热致折射率梯度和端面形变带来的光学畸变对热容激光器输出激光波前的影响.利用干涉法对介质的光学畸变进行了测量,提取出畸变的轮廓图,计算出等效热焦距,与模拟结果基本相符.结果表明:泵浦光与激光介质形状的不匹配将会使激光介质产生光学畸变,光学畸变的形状与泵浦光的形状密切相关.     

LD 端面泵浦分离式放大器结构的热效应研究

对LD端面泵浦分离型激光放大介质的热效应进行了分析和研究;建立了Cr,Yb:YAG/Yb:YAG复合结构的热传导模型。采用有限元分析方法得到了介质内部的温度分布,给出了介质折射率随温度变化的计算方法并得到了出射端面波前相位分布随温度变化的情况。计算结果表明:保持泵浦光功率密度不变,在不同的泵浦时长下,介质温度以及通光方向截面折射率变化也不同。随着泵浦时间的增长,介质的温度和折射率也增大,出射端面激光光束的相位畸变同样增大。当泵浦光功率密度增大时,温度与折射率的变化趋势与泵浦时间变化时的情况较为相似。热效应随着泵浦时间的增长和泵浦光功率的增大都变得越来越严重。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-