一种改善图像边缘效果的POCS超分辨率重建方法

利用图像超分辨率重建(SRR)技术可以在现有成像系统基础上提高图像空间分辨力。凸集投影(POCS)是超分辨率重建的主流方法之一。对POCS算法进行了改进,具体改进体现在两个方面:(1)用可控核回归插值图像作为POCS重建的初始估计以提高初始估计图像的质量;(2)将POCS重建中使用的点扩散函数(PSF)由高斯核改为可控核以减少重建图像的边缘振荡效应。对所提出的算法进行了仿真,实验结果显示采用本文方法重建图像的边缘效果有了明显的改善。     

基于跨尺度低秩约束的单幅图像盲超分辨率算法

单幅图像盲超分辨率方法是在模糊核未知的情况下仅利用单幅低分辨率图像重建高分辨率图像,这是一个严重的欠定逆问题.超分辨率正则化方法通过正则化约束项引入附加信息,为低分辨率图像恢复或重建合理的高频成分.本文将跨尺度自相似性与低秩先验相结合,提出了一种基于跨尺度低秩约束的单幅图像盲超分辨率方法,采用联合建模的方法同时估计模糊核与高分辨率图像.利用高分辨率图像、低分辨率图像及其降采样图像之间的跨尺度自相似性,对于低分辨率图像中的图像块在降采样图像中搜索相似块,将该图像块在高分辨率重建图像中对应的父块与其相似块在低分辨率图像中对应的父块合并,构造跨尺度相似图像块组矩阵.由于低分辨率图像中的跨尺度相似图像块能够为重建图像块提供潜在的细节信息,因此对相似图像块组矩阵进行低秩约束,在迭代求解过程中迫使重建图像恢复高频成分,进而促使模糊核的估计更加准确.此外,低秩约束能够表示数据的全局结构,对噪声具有鲁棒性.在真实和模拟图像上的实验表明,本文的算法能够准确地估计模糊核,重建高分辨率图像的边缘和细节,优于现有的自监督盲超分辨率算法.     

基于几何字典学习和耦合约束的超分辨率重建

传统的基于稀疏表示的超分辨率重建算法对所有图像块,应用单一冗余字典表示而不能反映不同几何结构类型图像块间的区别。针对这一问题,本文探索图像局部几何结构特性,提出一种基于结构特性聚类的几何字典学习和耦合约束的超分辨率重建方法。该方法首先对训练样本图像块进行几何特性聚类,然后应用K-SVD算法为每个聚类块联合训练得到高低分辨率字典。此外,在重建过程中引入局部可控核回归和非局部相似性耦合约束,以提高重建图像质量。实验结果表明,与单一字典超分辨率算法相比,本文方法重建图像边缘和细节部分明显改善,评价参数较大提高。     

基于Contourlet和改进牛顿插值的图像超分辨率重建

通过研究现有图像超分辨率重建算法原理,针对其不足,提出了一种基于Contourlet轮廓波和改进牛顿插值算法的图像超分辨率重建方法.该算法首先对原始图像进行Contourlet变换,然后对高频分量做多方向的改进牛顿差值计算,最后进行小波逆变换得到更加清晰的高分辨率图像.实验结果表明,该算法比传统插值算法和小波插值算法具有更好的视觉效果,并且拥有更高的信噪比和结构相似性.     

基于自相似性约束的视频稀疏超分辨率重建

通过研究帧间自相似性对图像重建的影响,提出一种自相似性约束的单视频稀疏超分辨率重建算法,以达到保持图像局部结构完整性的同时有效去噪的目的。该算法运用主成分分析PCA训练出适应图像不同局部结构的分类词典;通过帧间光流场的粗略运动估计和帧内帧间的精确块匹配,搜索自相似信息,运用非局部均值NLM滤波,并以此约束稀疏模型。仿真实验表明,提出的算法无论是客观指标,还是主观视觉上都超过了进行比较的几种分辨率提高算法。     

基于CUDA的遥感图像快速超分辨率重建算法研究

传统图像插值方法和基于字典学习的图像超分辨率重建方法在图像处理速度和重建图像的视觉质量之间很难保证有效的平衡,针对这一问题,文章利用自然图像非局部相似性的特点和GPU(Graphic Processing Unit)并行处理的优势,提出了一种基于CUDA(Compute Unified Device Architecture)的遥感图像快速超分辨率重建算法。实验结果表明,文章提出的方法能够很好的保持图像的边缘及结构信息,获得良好的视觉效果,同时实现遥感图像的快速超分辨率重建。     

融合内外特征的图像超分辨率算法

针对单一先验知识不足以约束病态严重的图像超分辨率问题,本文提出了融合内外特征的图像超分辨率算法。针对图像的自相似性,通过采用基于内部特征的深度卷积网络学习来增强输入图像的细节纹理,去除超分辨率图像伪影;同时,使用基于外部图像的稀疏约束方法来学习图像结构信息,并结合高频残差字典来解决超分辨率重建中的高频信息缺失问题;最后通过卷积稀疏方法分别从基础层和细节层来融合内外特征的重建图像,以获得细节清晰、去伪影的超分辨率图像,进一步提高图像质量。与传统算法相比,本文算法在重建图像的纹理特征和质量上都得到了增强,且视觉效果与峰值信噪比较传统算法有所改善。     

非局部联合稀疏近似的超分辨率重建算法

该文结合联合稀疏近似和非局部自相似的概念,提出非局部联合稀疏近似的超分辨率重建方法。该方法将输入图像的跨尺度高、低分辨率图像块统一进行联合稀疏编码,建立它们之间的稀疏关联,并将这种关联作为先验知识来指导图像的超分辨率重建。该文方法保证跨尺度自相似集具有相同的稀疏性模式,能更有效地利用图像的自相似性先验信息,提高算法的自适应性。通过自然图像实验,与其它几种基于学习的超分辨率算法对比,超分辨率效果有较好改善。     

基于耦合特征空间下改进字典学习的图像超分辨率重建

针对目前基于字典学习的图像超分辨率重建效果欠佳或字典训练时间过长的问题,本文提出了一种耦合特征空间下改进字典学习的图像超分辨率重建算法.该算法首先利用高斯混合模型聚类算法对训练图像块进行聚类,然后使用更改字典更新方式的改进KSVD字典学习算法来快速获得高、低分辨率特征空间下字典对和映射矩阵.重建时根据测试样本与各个类别的似然概率自适应地选择最匹配的字典对和映射矩阵进行高分辨率重建.最后利用图像非局部相似性,将其与迭代反向投影算法相结合对重建后的图像进行后处理获得最佳重建效果.实验结果表明了本文方法的有效性.     

基于边缘保持的航拍图像凸集投影超分辨率重建算法

针对传统的凸集投影(POCS)超分辨率图像重建算法经常出现的边缘模糊问题,在传统POCS算法原理基础上,文章使用基于梯度插值的算法生成POCS重建的初始估计图像,然后对中心点为边缘像素的空间点扩散函数(PSF)进行修正,使其系数沿梯度大的方向减小,梯度小的方向保持不变。利用改进的POCS算法进行了超分辨率图像重建实验,结果表明,图像峰值信噪比由原来的27.29dB达到28.12dB。该方法有效地保持了边缘特性,改善了超分辨率图像重建质量。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.