多特征点拓扑确定位姿测量算法研究

为解决单目视觉位姿测量时,由目标特征点较多导致图像点与目标点拓扑关系未知的问题,提出了一种多特征点拓扑确定位姿测量算法。较多特征点可在目标进行大角度运动时保证足够的特征点进行位姿解算,与较少特征点相比提高测量精度。该算法将拓扑确定的过程和位姿求解的迭代过程进行嵌套,同时进行拓扑确定和位姿计算。位姿计算的迭代过程基于平行透视投影模型,不需要目标重心投影点坐标作为迭代初始值。拓扑确定的过程转化为分配问题的求解过程。每次位姿迭代的过程中进行一次拓扑确定,拓扑确定的结果可以计算更优的位姿估计。通过多位姿测量实验和精度对比实验结果证明:该算法适合大范围、高精度的位姿测量,在-120~120范围内,位姿测量均方根误差为0。272。     

基于特征点的飞行器局部模板匹配

提出了一种基于特征点的飞行器图像模板匹配的方法.针对航空测试图像飞行器局部模板匹配的特点,提出用数字图像处理的手段,对目标图像进行基于Harris算法的特征点提取,并结合基于不变矩局部模板匹配算法,计算飞行器在航母降落过程中,航空测量图像飞行器的局部特征点附近进行快速的模板匹配.     

基于多尺度小波核LS-SVM的红外弱小目标检测

针对红外弱小目标检测提出了一种新的算法.算法首先对图像进行均值滤波处理以减少噪声点,然后利用基于多尺度小波核函数的最小二乘向量机对图像进行局部灰度曲面拟合,再通过二阶方向导数算子计算出其特征图像并将连续几帧特征图像融合,最后采用对比度分割方法确认目标位置.仿真实验表明,该方法不仅具有良好的适应性和检测效果,而且具有较强的时效性.     

基于CSAR图像的目标高度提取方法

圆周合成孔径雷达（Circular Synthetic Aperture Radar,CSAR）可以对目标进行360°全方位观测,获得目标全方位散射信息。通过将CSAR成像数据划分成多个子孔径能够直接获取目标高度信息,本文在原有获取目标高度信息的方法基础上,进行了改进和创新,提出了一种新的提取目标高度信息的方法。本文通过对子孔径图像进行高度向投影,在一定程度上提高了计算精度,同时在子孔径选择时,也考虑了子孔径之间的相关性,有效地提高了算法的精确性。最后首次引入自主测量的L波段实测数据对本文所提算法进行验证,证实了该方法的有效性和准确性。     

基于Contourlet变换的红外图像序列小目标检测技术

Contourlet变换具有多尺度,多方向性的特征,是小波的一种扩展.本文提出了一种基于Contourlet变换的红外小目标检测算法.首先对图像进行Contourlet分解;然后利用能量法提取其局部纹理特征,并计算各点的特征向量与中心向量问的距离,得到一个相关的多尺度距离像;最后根据该距离像进行直方图统计,从而实现目标的检测.文中给出了实验结果,并与基于小波变换的红外小目标检测算法进行了比较,结果表明,本方法能较精确地检测出红外小目标,优于基于小波变换的方法.     

基于标签定位的手持光刀测量点云拼接研究

基于手持光刀法三维测量具有精度高、速度快的优势,针对此法需多次测量获得完整物基金项目:国家自然科学基金项目(No.51405510)资助。体点云数据,提出基于3标签点云拼接算法,分析了3特征点转换算法的数学原理,采用棋盘格标签精确获取了相邻测量的共同特征点,推导了转换矩阵计算方法,提出了拼接精度的检验方法,最后基于标准球和标准平面,检验了算法的应用测量精度。     

基于HSV模型和特征点匹配的行人重识别算法

提出了一种基于HSV模型和特征点匹 配相结合的行 人重识别算法。首先根据改进的HSV空间颜色量化策略,比对两幅行人图像的 躯干和腿部主颜色是否一致,以快速确定备选目标;然后对备选目标,利用环形Gabor滤波器组生成多尺度图 像,再利用改进的FAST算法和BRIEF算法对多尺度图像进行特征点提取与描述,最后利用暴 力算法和随机抽样一 致性算法进行特征点匹配和提纯,以达到较好的匹配效果。实验结果表明,本文提出的行人 重识别算法具有较高的识别准确率,识别速度达到12frames。     

广域多点定位(WAM)精度分析

本文推导了广域多点定位目标位置计算的一般数学算法,并在该算法的基础上进行了数值仿真计算;本文依据仿真计算的结果,分析了多点广域多点定位设备站点布局对目标精度的影响,也分析了站点测量误差对目标精度的影响。     

基于多特征融合的红外目标关联算法

利用红外目标同时具有位置、灰度、面积等多特征的特点,提出了一种基于多特征融合的目标关联算法.首先在极坐标系下对目标位置采用概率数据关联算法计算候选目标的关联概率,然后结合目标的灰度、面积特征的预测误差计算关联波门中的候选目标在各种特征条件下的关联概率,进而利用多特征融合方式,计算出综合关联概率,完成目标状态估计的更新.实验仿真结果表明,由于跟踪关联概率由多种特征共同确定,避免了目标位置特征信息不稳定所造成的跟踪精度下降的问题,实现了密集杂波环境下红外目标稳定跟踪,其跟踪精度和稳定性明显高于依靠位置特征信息进行关联的传统概率数据关联算法.     

基于快速鲁棒性特征匹配的目标识别

针对基于特征匹配的目标识别算法复杂度高、难以实时处理的问题,提出基于快速鲁棒性特征(SURF)的快速特征匹配算法.通过应用双阈值顺序聚类算法对特征点进行聚类,并对每一个聚类建立k-d搜索树,采用优先搜索算法匹配模板与图像的特征点,提高了算法实时性.采用RANSAC鲁棒估计算法消除错误匹配点对,计算模板与图像平面之间的单应矩阵,进而实现对目标的准确识别定位.仿真实验证明了算法的有效性和实用性.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.