一种基于小波SAR图像斑噪声抑制的改进算法

基于小波变换的合成孔径雷达(SAR)图像斑噪声抑制算法,能很好的减小相干斑噪声对SAR图像的影响.但该算法在平滑噪声的同时,往往也会使图像的边缘变得模糊,降低了SAR图像的分辨率.比例边缘检测算法能较完整和准确的检测出SAR图像的边缘.我们试图提出一种改进算法,结合小波方法和比例边缘检测两种算法的优点.利用比例边缘检测提取出SAR图像的边缘图,用小波的方法对去边缘的图像进行去斑噪声处理,再把边缘图叠加到去噪后的图像上.试验证明这种算法能够在去除SAR斑噪声的同时,较好的保持SAR图像边缘.     

一种基于阈值分割的红外图像边缘检测方法

针对红外图像对比度和信噪比低,经典的图像边缘检测方法对实际图像难以检测的特点,提出了一种基于阈值分割的边缘检测算法。首先利用最大方差阈值法分割出红外图像的目标图像,其次用线性拉伸的方法对目标图像中存留的噪声进行去除,最后运用Sobel算子对目标图像进行边缘检测得到结果图像,并与经典的Roberts边缘检测算法、Sobel检测算法、Prewwit检测算法、Gauss-Laplacian检测算法进行比较。实验结果显示该检测方法是可行、有效的。     

数据融合技术在图像边缘检测中的应用

提出了一种基于数据融合的图像边缘检测算法。此种方法对初始图像分别采用“Rob-erts”算子和“sobel”算子及小波变换三种方法进行边缘提取,再将三种算法结果通过数据融合的手段获得一幅新的边缘图像。实验结果表明,该方案所得到的边缘图像的效果优于单独采用“Sobel”或“Roberts”算子所获得的边缘图像,是一种行之有效的图像边缘提取算法。     

SUSAN边缘检测算法性能分析与比较

介绍了一种基于灰度比较的边缘检测算法——SUSAN算法,讨论了该算法的模板和门限的选取方法,并用VC 编程实现了该算法。通过与传统边缘检测算法的比较,结果表明:由于该算法不涉及梯度的运算,因此对噪声图像的边缘检测效果优于传统的边缘检测算法。该算法适于含噪图像或低对比度灰度图像的边缘检测。     

一种基于小波变换数据融合的边缘检测算法

在图像处理中,边缘检测是模式识别、图像分割及图像场景分析的基础.传统的图像边缘检测算法具有算法简单,方向适应性强的优势,然而由于图像边缘具有多样性,使得这些传统算法的优越性得不到很好的体现.结合目前先进的小波理论和传统的微分法,提出一种改进的基于双正交小波变换的多分辨率图像融合方法.该方法把用不同方法处理得到的边缘图像融合生成一幅新的边缘图像,并取适当阈值,去掉多余的信息.经过计算机仿真验证,在突出图像的边缘和局城细节信息方面,该方法具有良好的视觉效果.     

结合数学形态学和图像融合的边缘检测算法

工业CT图像边缘检测是工业CT图像处理中一项十分重要的工作和预处理步骤,图像的最终处理结果取决于边缘检测的优劣程度。本文首先介绍了几种经典的图像边缘检测方法,并用这几种算法对工业CT图像进行了计算机仿真。通过对仿真结果的对比和分析,作者提出了基于数学形态学和图像融合相结合的图像边缘检测算法MDY并在ImageJ软件上编程实现。实验结果表明该算法能够有效地抑制噪声,完整的检测边缘,且优于其他传统边缘检测算法。     

一种基于Sobel算子梯度增强的边缘检测算法

针对传统Sobel算子在图像边缘检测中存在的弱边缘提取较差及边缘较粗等不足,提出了一种局部梯度增强的检测算法.算法采用改进的Sobel算子卷积模板计算图像梯度;然后对梯度图像采用局部标准差方法增强局部弱边缘的梯度,最后对局部梯度增强的图像进行细化处理并提取图像边缘,得到边缘图像.实验结果表明,该算法获取的边缘图像边缘信息较丰富,连续性好,边缘较细,整体效果优于传统Sobel算法,具有较高的实用价值.     

一种组合GAUSS-filter、SOBEL、NMS、OTSU 4种算法的图像边缘检测的FPGA实现

边缘检测是分离图像目标主体和背景的主要依据。通过检测图像上灰度显著变化的像素点集合来确定图像的边缘。目前边缘检测的方法大多综合应用两个算法来提高边缘检测质量。本文在FPGA上综合应用GAUSS-filter、SOBEL、NMS、OTSU等多种算法进行图像边缘检测。将原始采集到的彩色图像转换成灰度图像,先对图像进行高斯平滑处理,消除干扰性噪声;应用SOBEL算法计算图像梯度值,再应用NMS算法处理灰度,挑出轮廓边缘梯度值最大的灰度像素集合;最后应用OTSU算法自适应地确定图像门限阈值进行边缘检测。该方法不仅能刻画出图像的边缘,而且还能对边缘进行细化,实验结果显示对不同的图像都有很好的检测效果。本文所提出的在FPGA上实现的图像边缘检测方法具有准确、实时、高速等特点,能够应用到许多领域中。     

基于Contourlet变换和Susan算子的边缘检测方法

现存的基于空间域的图像边缘检测算法只能有效检测出图像有限方向的边缘。针对这一问题,根据Contourlet变换子带的各方向子带代表的方向信息及其梯度方向,提出了一种基于Contourlet变换和Susan算子的边缘检测算法。边缘检测算法首先对源图像进行Contourlet变换,然后分别对高、低频子图像进行边缘提取,最后通过一定的融合规则进行融合,得到边缘图。实验结果表明,这种边缘检测方法具有有效地抑制噪声、边缘检测精度高等特点,是一种有效的图像边缘提取算法。     

基于改进颜色模型的图像边缘检测方法

边缘检测是图像处理和模式识别领域的基本课题,传统的边缘检测方法仅利用图像的亮度分量信息。给出一种基于改进颜色模型中颜色距离的彩色图像边缘检测方法,通过实验,将文中给出的边缘检测算法与常用的边缘检测算子进行比较。并对边缘灰度图像的阈值处理方法予以讨论,提出一种具有良好的自适应性的算法——极大值法,通过寻找局部极大值点定位边缘。实验表明文中给出的算法在改进图像边缘检测效果上是有效的。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.