电力工程造价的全寿命周期管理对策

电力是关乎人民生计的公用事业,电力事业的发展与电力工程造价息息相关,所以电力事业的造价控制十分重要,它决定着工程项目的收益和电力单位运行费用,所以,科学的进行电力工程造价管理,采用全寿命周期的管理理念,采用动态分析管控措施,是减少电力项目建造价格,提高电力工程建设收益的有力手段,本文对目前我国的电力项目造价管控现状和决定电力项目建造价格的主要因素进行剖析,并给出相应的电力项目造价管理措施,以达到对电力项目建造价格的控制目的。     

浅析企业应用计算机工程造价管理

新形势下,全球信息化趋势的逐步形成,充分合理的利用计算机信息技术,发挥我国工程造价技术优势,加强工程造价的信息化管理,是企业对项目进行管理和控制的重要手段和步骤,有助于增强企业的竞争实力。社会主义经济建设新时期,科学的分析信息技术对建筑工程造价管理的影响及应用,是推动建筑市场稳定运行的有效途径。     

工程项目建设的全过程造价咨询管理

随着我国社会经济的快速发展,建筑行业得到了长足的发展,建筑市场中的竞争也越来越激烈。为了适应市场发展形势,提高企业在市场中的综合竞争力,必须加强对项目建设的成本管理,实施建设全过程造价咨询管理。本文首先对工程项目建设全过程造价咨询管理进行简单的分析,然后基于现阶段工程项目建设全过程造价咨询管理中存在的问题,提出行之有效的管理对策,供有关人员参考。     

变电站设计阶段造价管理策略与思考

近几年,随着国家对电力事业的重视,拟建和在建的变电站项目变得十分繁多,不过由于变电站施工项目施工比较紧迫,尤其是在对效益影响比较大的设计阶段出现的问题较多,而且我国变电站设计阶段的造价管理和发达国家相比存在较大的悬殊差距。本文就以国内外在变电站设计阶段的造价管理为论文切入点,针对变电站设计阶段的造价管理的基本原理进行分析,论述了设计段造价管理的基本原则、内容和特点,进一步探索设计阶段的造价管理的相关工作。并选用某地变电站作为研究对象,运用造价控制的相关理论和方法,应用到实例当中,验证方法的可行性。     

通信工程建设管理加监理的发展方向

通信工程作为我国信息化发展的重要基础,从服务的对象、内容与阶段等方面做好对通信工程项目的管理与监理,对于进一步提升我国通信工程项目的管理与发展水平是十分重要的。文章则将对通信工程项目管理加监理模式的发展方向进行调查与研究。     

电力生产规划和投资计划管理综合探讨

我国电力部门依据设计项目工程的管理规划制度,对企业自身重点建设的项目进行成本造价控制,进而达到提高电力工程建设投资效益的目的.本文对我国目前的电力生产规划和投资计划了分析和探讨,希望对相关企业的电力规划项目起到参考作用.     

浅谈公路造价管理中存在的问题和解决措施

公路造价管理的主要目的是实现对公路建设过程中成本的管理,提高项目建设的经济效益。但是现阶段公路造价管理过程中还存在着一些问题,制约了工程造价管理质量的提高。本文主要对公路造价管理中出现的问题进行分析,并且结合自身工作经验提出了可行性的解决策略,希望能够为公路工程项目的造价管理提供可以参考的意见和建议。     

浅析陆上风电工程建设前期造价管理的现状与对策

风力发电是我国"十三五"规划中重点投资的新能源领域之一.陆上风电工程投资额度大,建设前期造价控制对整个项目的造价管理具有十分关键的作用.而在很多风电工程实际建设当中,时常出现投资超出预期投资情况,在影响工程稳定建设的同时导致资金浪费现象的发生.本文从设计院的实际工作经验角度出发,阐述了目前前期阶段陆上风电工程投资控制中存在的主要问题,最后针对问题提出了项目前期阶段的造价管理工作中相关的看法与对策,希望对于陆上风电工程建设在前期阶段的造价管理起到抛砖引玉石的效果.     

IT企业信息化建设中的项目管理

文章对IT企业的信息化建设中的项目管理进行简单的分析阐述,并总结分析自己在实际工作得到的实践经验与教训。本文从分析IT企业信息化建设项目管理建设的基本要点出发,从与之相关的9个管理知识要点出发去构建一个使用IT企业进行信息化建设的管理体系。除此之外,还对如何进行综合项目管理进行重点阐述,对具体IT企业信息化建设中的项目管理工具和指标进行简单研究。     

新时期企业网络管理的有效对策探讨

随着我国现代化建设的不断发展,企业的服务与经营方式发生了比较大的变化,许多企业开始采用信息化网络技术对日常经营的具体项目进行管理.其中信息网络是生产管理信息化、网络化的重要条件,是企业内部十分重要的基础设施,为了提高企业在经营管理工作方面的安全性、稳定性与高效性,需要严格做好网络管理工作,最大程度上确保各项管理工作的顺利进行.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.