S3C2440A驱动RGB接口TFT LCD的研究

介绍了一款较典型的TFI型液晶屏的接口时序和逻辑要求,设计了嵌入式微处理器S3C2440A与该款带触摸屏功能的TFT LCD模组的接口电路,基于嵌入式Linux系统开发驱动程序,完成了RGB接口显示参数设置、图形界面显示调整及触摸屏控制等功能,实现了系统清晰、稳定的显示.实验表明,该方案通用性好,可以驱动不同分辨率的TFT LCD并提供显示与触摸控制功能;可移植性强,可以为各种嵌入式系统提供一个驱动TFT LCD的完整解决方案.     

基于嵌入式Linux系统的触摸屏驱动的开发

本文介绍了一个在嵌入式Linux平台上编写触摸屏驱动的实例。本平台基于摩托罗拉公司的Powerpc823e CPU芯片，并采用个性化的Linux244内核作为它的微型操作系统，介绍了如何通过对823e的SPI接口的操作实现与触摸屏控制芯片ADS7846的通信。本文在构造硬件的基础上说明了触摸屏驱动程序的C语言实现。     

基于输入子系统的Linux触摸屏驱动的实现

文中对输入子系统模型进行了介绍并重点对该驱动模型的实现原理及机制进行了分析。在此基础上,使用输入子系统驱动模型框架,以ARM处理器S3C2440嵌入式芯片为硬件平台,配合其芯片内部集成的触摸屏控制器,设计了Linux下的电阻式触摸屏驱动程序,实现了在S3C2440平台上,电阻式触摸屏的触点位置坐标采集和触点跟踪。     

基于NiosII的TRDB-LTM触控IP核设计

对触点位置坐标识别与输入是触摸液晶屏的重要功能。由于SOPC Builder系统没有提供TRDB-LTM触摸屏的驱动,因而提出了一种基于Avalon总线的TRDB-LTM触控IP核的设计方法。实现TRDB-LTM触控屏触碰位置坐标的准确录入。给出系统硬、软件设计过程。经测试,所设计的IP核能够准确快速的识别触碰位置坐标,工作稳定可靠。     

误码测试仪设计与实现

本文讨论了一种基于DSP、FPGA和触摸屏的误码测试仪的设计与实现。DSP实现对测试系统的控制,FPGA完成误码判别与计数,触摸屏提供人机操作交互界面。本文重点讨论了系统硬件FPGA设计和软件DSP设计,测试结果表明该误码测试仪工作稳定可靠,可实现对传输设备通信质量的检测。     

用触摸屏和PLC实现四人抢答器的控制设计

用触摸屏和PLC(可编程逻辑控制器)实现控制是现代工业控制中的一种新方法。文中基于三菱F940GOT-LWD-C型触摸屏和FX0S-30MR型PLC,提出了4路抢答器控制系统。描述了触摸屏的工作原理及特点,阐述了控制系统硬件与软件设计方案,实现了对四路抢答器的监控。系统软件设计包括触摸屏端的画面运行系统的设计和基于顺序功能图的控制程序设计。实际应用表明,该系统具有运行稳定、可靠性高、实用性强等特点。     

思立微推出国内首款支持单层无桥互容多点触摸屏芯片

上海思立微电子科技有限公司推出国内首颗支持单层无桥互容多点触摸屏芯片--GSLl688。单层无桥互容多点触摸屏传感器只需要镀一层ITO膜,利用ITO走线将驱动与接受线的交叉在FPC上完成,因而具有超薄单层无额外桥梁的特征,并且能实现无边框触摸屏设计。     

基于触摸屏和声控的爬步机控制器的设计

本文设计了一个使用触摸屏和声控芯片进行控制的爬步机控制器系统,该控制系统实现爬步机的抬升,运行,停止等功能。硬件电路主要采用STC10L08XE芯片,触摸屏,声控芯片LD3320和电机驱动电路等设计,软件编程在KEIL环境下实现。     

基于MPC8306处理器的触摸屏驱动优化设计

介绍了触摸屏控制系统的硬件构成,四线电阻触摸屏的工作原理。采用基于POWERPC架构的MPC8306作为主控制器,ADS7846作为四线电阻触摸屏控制器。驱动程序设计中,使用中值平均滤波等软件滤波算法对采样数据进行优化处理。通过计算触摸电阻对采样数据进行取舍,消除了触摸按键漂移现象。设计中提出一种状态分段法,辅助进行驱动程序流程设计。应用表明该触摸屏系统工作稳定可靠,触控效果很好。     

采用稀疏读出策略的电容触摸屏前端IC设计

针对采用触摸预测和窗口采样(TPWS)稀疏读出策略实现的电容触摸屏系统容易受到显示噪声和充电器噪声干扰的问题,本文提出了并行互补驱动和差分感应的方法以提高系统的信噪比。基于本文提出的并行驱动和差分感应方法,并结合TPWS系统的特点,采用0.35μm CMOS工艺设计实现了一个48通道电容触摸屏模拟前端IC,并设计了一个11.6in原型触摸屏系统用于评估该IC的性能。测试结果表明,本文设计的IC不仅能满足TPWS系统对于点测量和线测量的功能需求,并且系统的信噪比从原来的25.0dB提升到了35.8dB。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-