体育信息资源整合及其网络共享服务模式的构建

学校的体育教学以及科学研究都与体育资源的整合有着密切的关系,尤其对我国体育事业的发展起着一定的推动作用。科学技术的发展也推动着互联网信息平台的建设,体育事业的发展也跟随这样的信息建设而实行有效的整合与应用。本文主要结合当今互联网中体育资源信息整合的基本情况,来具体阐述体育信息资源网络构建的过程和内容。     

我国体育信息资源数字化建设探究

信息资源是当代社会的宝贵资源，对于体育事业尤其如此。自北京奥运会以来，体育的发展受到空前重视，而对体育信息资源的保护、开发与使用也成为当代理论界和实务界研究的焦点话题     

多媒体技术在体育信息领域中的研究初探

现代科技的发展，有效的促进了体育事业的进步，尤其是在体育信息方面，计算机多媒体技术的介入，实现了各种信息的快速采集，处理与整合、分享。由于体育信息本身除去文字以及图片之外，还有很多影像以及音频信息资料，加之，近些年来，我国体育领域的蓬勃发展，使得体育信息数量持续增多，科学的采用多媒体技术，实现对体育信息的处理，已经成为了目前体育信息系统的发展趋势。文章针对多媒体技术在我国体育信息领域的研究进行初步分析。     

《2008四川省互联网络发展状况报告》前言

积极推进信息化建设,提高经济社会信息化水平,一直是我国经济发展中重要的指导方针,信息资源建设与开发已经与信息化建设密不可分,互联网建设作为信息资源的重要组成部分,应该率先承担起信息整合、传播、共享与利用的使命。为此,我们需要对互联网发展状况、资源配置以及应用情况有一个全面、深入、持续的了解和研究,确保互联网的健康发展,此点对于刚刚遭受过严重地震灾害的四川省互联网而言更为重要。     

解析信息化体育场馆系统的构建与完善

在经济全球化的发展趋势下，体育事业得到快速的发展，体育信息化建设具有重要的时代意义。体育总局不断加大体育事业进信息化建设的投资力度，在信息化发展建设中，不断实现体育平台的数字化、智能化，本文主要围绕信息化体育场馆系统的构建与完善，不断开创体育信息化的新局面。     

试论体育信息化与大学体育管理模式创新

信息化是时代的要求,体育信息化为大学体育管理提供了新的发展空间,也带来了挑战。实现大学体育管理模式信息化能有效提高管理水平,充分利用体育资源,促进大学体育事业发展。本文分析了体育信息化在大学体育管理中的作用,针对大学体育管理中的问题,提出了改革大学体育管理模式的对策。     

数字化时代体育信息资源的优化整合

数字化时代具有高效性、便捷性等特征,现代人对数字化技术的运用程度越来越高,在体育信息资源的优化整合中也离不开数字化技术和理念的运用。由于在我国现阶段的体育信息资源现状中存在诸多方面的不利因素,阻碍了我国体育信息资源的合理配置和发展。加强体育人才的培养,进行相关技术的升级,做好体育信息资源的筛选和分类,能够更加高效的发挥我国体育信息资源优化整合的优势。     

数字化时代体育信息资源的优化整合

数字化时代具有高效性、便捷性等特征,现代人对数字化技术的运用程度越来越高,在体育信息资源的优化整合中也离不开数字化技术和理念的运用。由于在我国现阶段的体育信息资源现状中存在诸多方面的不利因素,阻碍了我国体育信息资源的合理配置和发展。加强体育人才的培养,进行相关技术的升级,做好体育信息资源的筛选和分类,能够更加高效的发挥我国体育信息资源优化整合的优势。     

新时期背景下关于体育信息化建设的思考

在经济全球化的时代趋势下,我国体育事业的发展突飞猛进,体育信息化建设具有重要的社会作用。本文主要阐述体育信息化的涵义,加强对体育信息化在新时期我国体育发展中的认识与重视,从而提出我国体育信息化建设的重要途径,以促进我国体育事业的飞速发展。     

我国城市在信息多元化发展中的体育经济作用研究

发充分发挥体育产业的积极作用服务于经济社会发展就要求把发展全民健身奥运争光等体育事业与推动体育产业的快速健康发展并举,而体育产业与体育事业的结合就是体育经济体育经济是一种经济发展类型是一种经济运行模式是一种特殊经济运行体系城市是育产业发展的腹地城市发展与体育经济相互促进(体育经济与国家发展战略社会发展需求和城市发展紧密联系其科学发展意义深远。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.