基于3G网络的无线视频监控终端设计

本终端是集视频或数据采集、视频压缩、3G无线视频传输等功能为一体的数字视频监控终端,终端采用TVP5150视频解码芯片,将摄像机采集的模拟视频信号转换成数字信号输入到DSP中。通过在DSP中植入的H.264算法来压缩终端接收到的视频流,这能够满足高精度实时视频监控的需求。本终端整合了3G网络和Inter-net网络的优势,无论客户身在何处、在何时间,都可以迅速接入系统,随时随地进行远程监控管理。本终端可以通过短信、命令台控制、终端服务器、定时以及报警触发方式启动,同时可以实时采集现场数据。     

基于SOPC技术的实验室智能视频监控系统

设计和实现了一种基于SoPC技术的实验室智能视频监控系统。系统以Altera公司的TE3开发板为平台,采用CCD高速摄像头,配备烟雾、温度、湿度传感器,实现实时图像采集、处理、压缩及运动目标检测与跟踪。通过无线网络将图像数据和环境参数传输至远程计算机监控终端,对实验室进行智能化监控。     

3G无线视频监控系统的设计与实现

随着3G技术的日益成熟和嵌入式技术的飞速发展,数字化视频监控系统将逐步替代传统的模拟视频监控系统,同时随着人们生活质量的提高和活动范围的不断扩大对无线视频监控系统的需求越来越迫切,所以利用3G网络进行实时视频传输必将成为一种趋势。该系统在Linux操作系统下,搭建了一个基于ARM9的视频图像采集环境,并通过CDMA2000网络完成了视频图像的传输接收,实现了远程视频监控的功能。     

基于短信控制的视频监控研究

基于3G远程视频监控系统伴随着我国移动通信技术的发展,3G服务能够同时传送声音及数据信息,速率一般在几百比特率以上。基于IP技术的短信网络远程视频监控也应运而生。手机短信远程遥控利用手机无线网络——3G来实现对视频监控装置的启动关闭,个人电子计算作为输出终端接收视频画面,这使视频监控实现了远程化实时化。对于误码率、切换效率、时延、带宽稳定性等方面有了显著的提高。     

一种基于FPGA的多路视频网络监控系统设计

针对市场对小型化、嵌入式、大场景视频监控的需求,设计一种基于FPGA的多路视频网络监控系统。该系统主要由摄像头采集模块、数据处理模块、缓存模块和以太网传输模块组成,通过TW2867芯片同时采集4路视频送入FPGA进行通道分离和视频格式转换,再利用DDR2高速存储多路视频数据,最后通过编程控制以太网收发器传输控制器RTL8211EG实现了视频数据的网络传输。视频监控终端可以通过网络接收视频流并进行实时显示,结果表明,该系统具有集成度高、体积小、实时性强、传输速度快等优点。     

基于Android和Raspberry Pi的远距离视频监控系统的设计

为了实现视频监控的移动性和远程操控,结合无线网络、Java语言和Eclipse开发编译工具,提出一种使用Android和Raspberry Pi组合,实现远程实时视频监控的新思路。摄像头获取图像数据,通过Raspberry Pi处理后以视频流的形式上传到图像服务器,以Android智能手机作为移动控制终端,通过Wi Fi访问图像服务器,获取图像数据并在控制界面进行显示,用户通过视频信息对移动机器人进行远程控制,达到远程实时监控的效果。通过实验测试,该系统可以有效地进行远程视频监控,具有良好的可用性。     

基于SVAC视频标准的手机监控客户端设计

为满足个人随时随地实施视频监控的需求,设计了一种3G智能手机视频监控平台。在分析移动视频监控系统的总体结构基础上,着重阐述了手机客户端监控软件开发方法、监控视频的传输模式和传输协议。它采用专用的安防视频标准SVAC以满足安防要求;客户端多画面播放以实现多路监控,多线程编码以提高软件运行速度。搭建的原型试验系统表明能实现流畅稳定的实时监控。     

基于SVAC视频标准的3G智能手机监控平台设计

为满足个人随时随地实施视频监控的需求,设计了一种3G智能手机视频监控平台。在分析移动视频监控系统的总体结构基础上,着重阐述了手机客户端监控软件开发方法、监控视频的传输模式和传输协议。它采用专用的安防视频标准SVAC以满足安防要求;客户端多画面播放以实现多路监控,多线程编码以提高软件运行速度。搭建的原型试验系统表明能实现流畅稳定的实时监控。     

基于CamShift跟踪算法的塔吊监控系统设计

为了解决塔吊驾驶员因视觉盲区而造成的各种安全事故问题,提出了一种针对塔吊驾驶员使用的无线视频监控系统。系统的采集终端和接收终端采用S3C6410微处理器芯片,移植OpenCV视觉库到系统终端,调用CamShift算法实现对吊钩实时跟踪。结合终端的WIFI模块将网关节点嵌入服务器连接到无线AP,驾驶员通过便携式接收终端访问无线AP获得实时跟踪图像。测试结果表明：视频传输系统稳定可靠,实时跟踪准确,满足驾驶员实时监控需求。     

基于3G和WiFi的无线视频监控系统的设计

为了实现对远程环境的无线智能监控和提高用户控制体验,研究了3G和WLAN无线网络的特点,提出一种以ARM和linux为平台,融合3G和Wifi无线网络,设计一款无线视频监控系统。利用摄像头进行视频图像的采集,使用H.264进行图像的编码压缩和RTP协议进行图像传输,借助3G网络实现远程控制传输,同时利用Wifi实现局域网络接入的补充。实验结果表明可以实现pc、平板、手机同时多路连接监控,3G、Wifi网络可任意切换,达到预期效果。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.