应用模糊隶属度的H.264帧内预测模式快速选择

H.264中采用的率失真优化技术虽然提高了编码效率,但也使计算复杂度增加,影响编码的实时实现。针对这一问题,通过分析H.264中计算复杂度较高的帧内预测模式选择部分,提出一种新的帧内预测模式选择算法。根据模糊隶属度函数预先判断宏块类型,从Intra_4×4和Intra_16×16两种预测模式中选择一种,并通过判断4×4块的纹理方向,减少候选预测模式的数量。实验结果表明,在保持图像性能和码率基本不变的情况下,该算法能有效提高H.264的编码速度,有利于实时应用。     

基于兰氏距离的H.264/AVC帧内快速算法

提出了一种帧内模式快速选择算法。利用宏块内部相邻像素值的差异判定宏块的类型,再进行Intra_4×4和Intra_16×16两种模式的快速选择。对于Intra_4×4模式,利用兰氏距离提取4×4块的纹理方向,根据纹理方向进行Intra_4×4模式的快速选择。实验结果表明,所提算法在峰值信噪比(PSNR)和码率变化不大的情况下,显著地提高了编码速度。     

基于梯度方向算子的H.264帧内模式选择算法

提出梯度方向算子的概念,基于该算子提出了一种H.264帧内模式快速选择算法。本文首先应用梯度方向算子计算编码宏块中各4×4亮度子块的纹理特征和灰度起伏特征,根据这两种特征参量削减4×4帧内候选预测模式。通过统计宏块中各子块的4×4候选预测模式信息,结合梯度方向强度门限判别法削减宏块的16×16候选预测模式,通过率失真优化算法计算得到最优亮度预测模式。进一步根据亮度宏块和色度宏块的对应关系,在亮度候选预测模式的基础上对色度宏块候选预测模式进行削减,最后计算得到最优色度预测模式。该算法削减了50%以上的帧内预测模式,减少了帧内预测模式选择的运算量,实验表明,该算法能够在峰值信噪比和码流比特率变化轻微的前提下减少50%以上的运算量。      

H.264/AVC帧内4×4块预测模式判别的改进算法

H.264提供了4×4的亮度块帧内预测,其共有9种预测模式.在判断其预测模式中要求4×4块的每种预测模式都要判断,因此计算复杂度很高.有效减少4×4块预测模式的判断次数,在实时视频编码过程中很有价值.基于此,提出了一种帧内4×4块预测模式判断提前退出的优化算法,并对其进行了试验,得到了很好的效果.     

基于H.264/AVC的视频信息隐藏算法

在H.264/AVC的帧内预测环节,调制H.264/AVC编码中I帧4×4亮度块的帧内预测模式实现信息隐藏.这种调制基于该模式与待隐藏比特之间的映射规则进行.宿主4×4块的具体位置由各块自身特点结合密钥所指定的嵌入位置模板确定.信息的提取过程不需要原始视频内容,也不需完全解码,而只要对码流中的帧内预测模式进行解码即可.     

基于区域质心算法的改进算法

帧内预测是H.264中提高编码效率的重要部分,文中主要是根据色度块的预测模式在整个帧内预测算法中对算法性能的影响,质心算法在4×4块的预测模式的不准确性的基础上提出的新的算法。通过实验证明此新方法在编码率和比特率方面都有改善。     

一种基于H.264/AVC帧内预测模式选择的快速算法

依据宏块的空间相关性,并从概率的角度考虑,提出了一种新的快速模式选择算法,该方法减少了对Intra4×4和Intra16×16的预测模式率失真的计算,降低了帧内预测编码的复杂度.与参考软件JM11.0中模式选择算法相比,在PSNR基本保持不变的情况下,新算法的编码时间缩短了大约30%,而比特率仅提高了1%左右.     

先进便携式多媒体编码技术与应用(下)

H.264/AVC标准的主要技术 帧间预测(Intra-frame Prediction) 根据每个宏块的片编码类型的不同,可以以几种编码类型中的一种进行传输.所有片编码类型可支持两种类别的帧内编码类型,分别为INTRA-4×4和INTRA-16×16.在以往的视频编码标准中,预测操作都是在转换域中进行的,与此不同,在H.264/AVC标准中,预测操作往往是根据已编码块中的相邻样本,在空间域中进行的.     

基于H.264帧内预测模式的信息隐藏算法

根据H.264标准编码的特点,提出一种较高性能的信息隐藏方案。文章分析H.264中I4×4亮度块的9种帧内预测模式,以及最优模式的选择策略,将I4×4亮度块的9种帧内预测模式作为备选宿主,利用信息嵌入算法将信息嵌入到视频中。这样降低了信息隐藏过程中预测模式调整对视频质量的影响,并能提高嵌入信息数据量。     

一种新的H.264/AVC快速帧内预测模式选择判决算法

针对H.264视频编码标准帧内预测模式选择部分计算量大的问题,本文提出了一种快速帧内预测模式选择判决算法。该算法首先提出了一个新的算子,用来描述图像灰度分布信息,作为判断图像复杂程度的依据,进而提出两个对量化系数(QP)自适应的阈值,将图像分为平滑、变化剧烈和特征模糊3种。平滑图像宏块使用Intra_1616模式预测,变化剧烈的宏块使用Intra_44模式预测,特征模糊的宏块使用标准算法预测。实验结果表明,该优化算法能在保证很好的图像质量的同时,使帧内模式选择计算次数减少30%以上,而且对传输码率基本没有影响。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.