基于FPGA多通道多带宽多速率DDC设计

数字阵列雷达的核心内容之一是单元级回波信号中频或射频数字化后,在数字域进行幅/相加权实现接收数字波束形成,并具有灵活的波束调度和更好的抗有源干扰的性能,基于多通道数字化接收机的数字阵列模块是数字阵列雷达的关键模块。论述了数字阵列模块内部基于FPGA的多通道、多带宽、多速率数字下变频设计,包括方案设计、仿真设计和工程化设计,同时给出了设计结果,该设计方法可应用于多通道数字化接收机设计。     

利用雷达发射信号对接收阵列实时校正的方法

本文主要介绍一种利用雷达发射信号,对接收阵列及通道实现实时校正的方法。数字化阵列雷达将接收阵列天线上每个阵元接收的信号进行数字化后,通过数字波束形成(DBF)形成一个或者多个不同指向的波束,而每个阵元的信号需要经过不同的通路,不可避免的会存在幅相差异,导致通道间的特性不一致,所以在DBF之前,必须完成通道一致性的校正,而通道特性又随着环境变化存在时变特性,所以对高精度的雷达往往需要进行实时校正。     

数字阵列雷达并行信号处理算法及实现

在某型号数字阵列雷达信号处理机的研制过程中,针对多波束、多任务下实时运算的难题,基于分布式多DSP处理器平台研究了数字阵列雷达的并行算法实现,采用多通道并行和通道内流水并行的处理方案进行算法分配和映射,成功完成了系统设计。实验结果表明,该系统具有较好的实时性、并行性和可扩展性。     

宽带恒定束宽波束形成器的高速数据采集方案及实现

设计了一种适用于水声宽带恒定束宽波束形成器的多通道数据采集方案。采用FPGA技术,控制16个A/D转换芯片,同时对阵列的16个通道信号进行模/数转换,使采样后各个通道之间的相位误差小于1°,满足了恒定束宽波束形成器对各通道相位一致性的要求。该方案已在水声阵列信号探测系统中成功应用。     

基于SHARC的32通道高速实时数据采集板的设计

该文针对高频雷达信号处理机中多通道模拟信号的数据采集要求,基于SHARC处理器设计了一块32通道的实时数据采集板。给出了系统框图、FPGA设计功能框图以及相关的抗干扰措施等。     

阵列多波束雷达的优化设计

针对阵列多波束雷达主要参数的优化设计进行了理论分析,提出了阵列多波束雷达的空域覆盖、接收波束和接收通道的设计原理、误差分析和工程实现,给出了实验系统的实际效能结果及其分析。这对优化雷达系统参数、合理利用雷达资源有一定的工程指导意义。     

一种多通道高速数据采集板的时钟设计

软件无线电技术及高速模数转换、数字信号处理器件的出现使雷达、通信等信号的采集得以高采样率实现,而智能天线、MIMO等组成的系统都需要多通道实现同步,时钟信号抖动、相噪等特性对AD转换器的性能、阵列信号处理的波束形成等有很大的影响,所以多路同步的高性能时钟信号的设计是高速多通道数据采集系统不可忽视的一部分。     

宽带数字阵列雷达通道固定时延误差估计技术的研究

为解决宽带数字阵列雷达通道固定时延误差导致的数字波束成形性能下降问题，提出一种基于最大似然估计和抛物线插值的通道固定时延误差估计方法。该方法首先通过基带发射信号和包含未知时延参量的基带接收信号的相关积分后信号的峰值点估计通道固定时延整数部分；然后利用峰值点及其相邻两点进行抛物线插值完成通道固定时延小数部分估计；最后计算多通道固定时延误差，并完成各通道固定时延误差的补偿。仿真结果表明，该方法能够在赛灵思的xcku115平台下，实现宽带数字阵列雷达的多通道固定时延误差估计，并且在输入信号信噪比为10～30d B的情况下，估计精度能够达到0.001～0.014倍采样间隔，可以满足工程的实际应用要求，提高宽带数字阵列雷达中数字波束成形的性能。     

应用于数字阵列的多通道波形产生系统设计

直接数字频率合成（DDS）是数字阵列雷达（DAR）实现收发数字波束形成的关键技术之一。给出了一种基于DDS技术的多通道波形产生系统的设计方案,该方案在25cm×12cm的PCB板上实现了波形产生、波形捷变与幅相控制的系统集成设计。该系统能同时产生16路频率、幅度和相位独立控制的中频雷达信号,满足数字阵列雷达对收发阵列单元的高集成度、小型化、低成本和多功能的要求;系统实现的主要技术指标为：信号带宽1～120MHz可变,通道隔离度大于60dBc,窄带脉内信噪比大于65dBc,满足数字阵列雷达技术指标的要求。     

基于FPGA的多通道数据采集系统设计

为了满足科研中对雷达信号的采集需求,设计了一种基于FPGA的多通道数据采集系统。该系统涵盖了以太网接口的MAC层、DDR3读写控制、FMC接口的数据接入与控制。系统在经过软硬件联调后,数据采集的各项功能良好,各个通道同步,通道间的串扰较小,可广泛应用与雷达、通信领域。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.