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读了贵刊第2 2卷第1期6 0页“ITO靶材中氧含量EPMA定量分析方法研究”一文,该文发现ITO靶材中氧含量EPMA定量分析结果有误差,指出这点是对的。但第3节引入“密度修正”是不合物理原理的。分析误差应当从其他方面(ZAF修正中公式的误差、X射线峰的定量处理等)去探索。现对密度修正不合理之处简要说明如下。文中提到“在实测过程中,轰击标样和试样的电子束斑尺寸是一致的,也就是说,轰击的表面积相同。电子束轰击样品能达到的深度基本一致,这表明标样和试样所测体积V相同。”实际上对于原子序数相同的样品和标样来说,电子的穿透深度是和…     

SnO2的含量对ITO透明导电薄膜结构和光电特性的影响

阐述了射频磁控溅射方法制备的柔性衬底ITO透明导电膜的结构和光电特性与靶材中SnO2含量的关系.ITO靶材中In2O3掺杂SnO2最佳比例(质量比)为7.5%,制备薄膜的霍耳迁移率为89.3 cm2/(V·s),电阻率为6.3×10-4Ω·cm,在可见光范围内相对透过率为85%左右,随着靶材中SnO2含量增大,薄膜的光学带隙展宽.用不同掺杂比例的靶材制备的薄膜均为多晶纤锌矿结构,掺杂比例增大,样品的晶格常数变大,晶格畸变明显.     

日本开发圆筒型ITO靶材

日本东曹公司开发出可提高使用效率的圆筒型ITO靶材，在2006年日本国际平面显示器展会上进了行展示。     

ITO薄膜的制备及其光电特性研究

采用直流磁控溅射法,分别用ITO陶瓷靶、In-Sn合金靶,在玻璃基片上镀膜。研究ITO透明导电膜其膜厚、靶材、溅射气压和溅射速率等工艺对光电特性的影响。结果表明,采用陶瓷靶镀膜要比合金靶效果好,膜厚70nm以上、溅射气压0.45Pa和溅射速率23nm/min左右为最佳工艺条件,并得到了ITO薄膜电阻率1.8×10–4Ω.cm、可见光透过率80%以上。     

ITO薄膜厚度和含氧量对其结构与性能的影响

在玻璃衬底上用直流磁控溅射的方法镀制ITO透明半导体膜,采用X射线衍射技术分析了膜层晶体结构与薄膜厚度和氧含量的关系,并测量了薄膜电阻率及透光率分别随膜厚和氧含量的变化情况。以低氧氩流量比(1/40)并控制膜厚在70nm以上进行镀膜,获得了结晶性好、电阻率低且透光率高的ITO透明半导体薄膜,所镀制的ITO膜电阻率降到1.8×10–4?·cm,可见光透光率达80%以上。     

成膜与热处理参数对溅射沉积ITO 膜电性能的影响

采用了补氧直流磁控反应溅射工艺制备ITO膜，在不同基片加热温度和补氧流量下获得最低方块电阻值的最佳制备工艺。对制备的ITO薄膜进行了退火热处理，研究不同温度热处理后膜的方块阻值的变化。实验表明，对一定的基片加热温度，ITO膜的方块电阻与溅射气氛中的补氧流量有关，并存在一个最佳补氧的值，在该条件下制备ITO的方块电阻最小，在膜厚为40nm埃时仅有不到100Ω／□。影响溅射沉积ITO透明导电薄膜方阻的，除了溅射沉积时基片的烘烤温度和补氧流量外，还包括后期大气退火热处理的温度。     

基底温度对直流磁控溅射ITO透明导电薄膜性能的影响

用直流磁控溅射法制备透明导电锡掺杂氧化铟(ITO)薄膜,靶材为ITO陶瓷靶,组分为m(In2O3):m(SnO2)=9:1.运用分光光度计,四探针测试仪研究了基底温度对薄膜透过率、电阻率的影响,并用X射线衍射(XRD)仪对薄膜进行结构分析.计算了晶面间距和晶粒尺寸,分析了薄膜的力学性质.实验结果表明,在实验设备条件下,直流磁控溅射ITO陶瓷靶制备ITO薄膜时,适当的基底温度(200℃)能在保证薄膜85%以上高可见光透过率下,获得最低的电阻率,即基底温度有个最佳值.薄膜的结晶度随着基底温度的提高而提高.     

退火处理对ITO表面特性及有机发光器件性能的影响

为了改善有机发光器件（OLEDs）的性能，在0～600℃不同温度下对ITO透明导电玻璃进行了退火处理。SEM观察到随退火温度的升高，ITO表面粗糙度增加；四探针电阻测试结果显示，在300℃以上温度退火后ITO表面电阻率有明显增加。用退火前后的ITO玻璃作为阳极制备了OLEDs，器件结构为ITO／TPD／Alq3／Al，比较器件的电流密度-电压特性曲线测试结果表明，ITO薄膜的热处理温度对OLEDs性能有显著的影响。     

X射线衍射分析热处理温度对透明导电膜结构与导电性能的影响

采用溶胶一凝胶法以铟、锡氯化物为前驱物制备不同热处理温度下的ITO膜，对制备的ITO膜样品进行X射线衍射分析。研究表明热处理温度对ITO膜的衍射峰相对强度、晶粒尺寸和晶格常数有较大的影响，随着热处理温度的增加，ITO膜随机取向增加，晶粒增大，晶格常数在400℃时畸变最小。热处理温度为450℃时ITO膜的择优取向较弱，晶粒较大，晶格畸变较小，ITO膜的方阻最小。     

ITO与Ni和n型GaAs非整流接触的研究

本文报道了氧化铟锡（ITO）分别与金属和半导体的接触电阻率。采用电子束蒸发的手段制备高质量ITO材料。薄膜电阻率为2.32×10-4 Ω?cm,可见光范围透射率为92.8%,禁带宽度为3.804 eV。采用圆点型传输线模型的方法,对ITO/金属和ITO/n型GaAs之间的接触电阻进行了分析。测得ITO与Ni之间最低接触电阻率为2.81×10-6 Ω?cm2 ,ITO与n型砷化镓之间的接触电阻低至7×10-5 Ω?cm2,这是目前所报道的最好的结果。根据以上结果,我们可以确定将ITO应用在GaAs基太阳电池中来提升器件的性能。     

Pulsed laser deposition of ITO thin films and their characteristics

The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 × 10⁻⁴ Ω cm has been achieved in the ITO films with content of Sn 5 at %.     

Influence of oxygen flow rate on microstructural,electrical and optical properties of indium tin tantalum oxide films

Indium tin oxide (ITO) and indium tin tantalum oxide (ITTO) films were deposited on glass substrates by magnetron sputtering technology with one or two targets. Properties of ITO and ITTO films deposited at different oxygen flow rates were contrastively studied. Ta-doping strengthens along the orientation of (400) plane and leads to better crystalline structure as well as to a decrease in surface roughness. The increase in oxygen flow rate increases sheet resistance and reduces carrier concentration, and ITTO films show higher carrier concentration. Certain oxygen flow rates can improve the visible light transmittance of films, but excessive oxygen can worsen the optical properties. The carrier concentration has an important influence on near-IR reflection, near-UV absorption and optical band gap. The optical band gap decreases with the increasing of oxygen flow rate, and ITTO films show wider optical band gap than ITO films. ITTO films prepared by co-sputtering reveal better optical–electrical properties and chemical and thermal stability than ITO films.     

毫米波测云雷达回波的衰减订正研究

毫米波测云雷达探测云目标时,电磁波除了受到云目标衰减之外,还受到大气传输中氧气以及水汽的衰减,电磁波的衰减导致雷达观测到的回波强度小于云目标的实际回波强度,这种误差将影响云内结构的反演。因此,为了使毫米波测云雷达的探测数据正确地反演出云目标的宏观物理特征,必须对进行毫米波测云雷达工作频率下气象目标物的衰减进行订正。主要利用逐库衰减订正算法以及分级逐库衰减订正算法对英国Chilbolton 观测场94GHz 毫米波测云雷达的一次降水云观测结果进行了垂直方向的大气衰减订正研究,并比较逐库衰减订正算法以及分级逐库衰减订正算法间的反演差异。同时,利用国际电信联盟ITU-RP. 676-10 建议书中氧气以及水汽衰减订正公式进行了毫米波测云雷达探测数据的二次订正。分析和对比结果表明,衰减系数的变化对于云目标的宏观物理特征反演有着明显的影响,并且分级逐库衰减订正法的订正效果强于逐库衰减订正法。     

Properties of ITO：Zr films deposited by co-sputtering

ITO：Zr films were deposited on glass substrate by co-sputtering with an ITO target and a Zirconium target. Substrate temperature and oxygen flow rate have important influences on the properties of ITO：Zr films. ITO：Zr films show better crystalline structure and lower surface roughness. Better optical-electrical properties of the films can be achieved at low substrate temperature. The certain oxygen flow rates worsen the electrical properties but can enhance the optical properties of ITO：Zr films. The variation in optical band gap can be explained on the basis of Burstin-Moss effect.     

Electrical and optical characteristics of polymer light-emitting devices with surface-treated indium-tin-oxide electrodes

Effects of differently surface-treated indium-tin-oxide (ITO) electrodes in poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV)-based polymer light-emitting electrochemical cells (LECs) were investigated. It is found that the surface properties of ITO substrates are more effectively improved by the oxygen plasma compared with other treatments. Atomic force microscopy (AFM) measurements show that the oxygen plasma treatment reduces the roughness of the ITO surface and yields more smooth and homogeneous surface. X-ray photoelectron spectroscopy (XPS) analyses reveal that the oxygen plasma treatment increases the oxygen content and decreases the carbon content on the ITO surface. Contact angle and surface energy results indicate that the oxygen plasma treatment enhances the wettability of the ITO surface. The LECs with the oxygen plasma-treated ITO substrates exhibit the higher injection current, luminance and efficiency than that of the devices based on the ITO substrates treated in other different ways, due to the improvement of interface formation and electrical contact of the ITO electrode with the polymer blend in the LECs.     

工艺参数对WO_x薄膜电致变色特性和结构的影响

采用直流反应磁控溅射工艺,以纯钨靶为靶材在铟锡氧化物玻璃上制备电致变色WOx薄膜,研究了氧含量、溅射功率及溅射环境温度等工艺条件对其电致变色特性和结构的影响。实验结果表明:磁控溅射得到的WOx薄膜主要是非晶态的,在一定范围内,较低的氧含量,较高的溅射功率,较高的溅射环境温度下制备的WOx薄膜有较好的电致变色特性。     

Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.     

电容耦合氧等离子体处理ITO基片对OLED的影响

在不同条件下采用电容耦合氧等离子体处理用于有机电致发光（OLED）的ITO基片,使用接触电势法测量了基片表面功函数的改变。研究发现,氧等离子体处理可以有效地提高ITO表面的功函数。X射线光电子能谱的测量揭示了其本质：氧等离子体处理可以提高表面氧原子的含量,同时降低ITO表面锡／铟原子的比例,由此导致了ITO表面功函数的提高。高功函数的ITO可降低空穴由ITO向OLED空穴传输层中注入空穴的势垒,从而提高OLED器件的性能。进一步的基于联苯二胺衍生物NPB／8-羟基喹啉铝（Alq3）的标准器件的研究证明了这一点。研究同时发现,在相同的真空和氧压条件下,保持处理时间不变,随着射频激发功率的升高,ITO表面功函数会逐渐降低。这个功函数的降低,使得OLED器件的驱动电压升高且电流效率减小。因此使用电容耦合氧等离子体处理的ITO来制备OLED器件,需要在优化的条件下进行,以达最佳效果。在本实验系统下处理条件为射频功率100W、时间25s。     

基于人工靶标的多光谱遥感图像真彩色合成

多光谱真彩色合成图像在遥感图像解译判读、目标识别和信息处理等领域具有广阔的应用前景。真彩色合成技术取决于获得准确的X、Y、Z三刺激值，以建立相机RGB三基色体系与人眼视觉颜色体系之间的关系。为此，提出了基于彩色目标光谱信息的多光谱图像真彩色合成方法，通过在卫星过顶时铺设人工靶标，利用实测的靶标反射率光谱，计算相机三基色体系RGB与人眼视觉颜色体系CIE-XYZ之间的转换矩阵，构建适用于一定大气条件下的真彩色校正模型。利用高分一号卫星多光谱图像进行真彩色校正实验的结果表明，该方法对色彩丰富度不同的图像均具有较好的颜色校正效果。