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成像光谱仪离轴三反望远系统的光学设计 总被引:1,自引:0,他引:1
视场宽、结构紧凑、体积小、质量轻是空间光学成像系统设计研究的热点.在共轴三反镜系统的几何光学成像理论基础上.从离轴三反望远系统的方案选择、初始结构计算、三级像差的校正及光学系统的优化4个方面,研究了成像光谱仪用宽视场、大相对孔径离轴三反消像散望远系统的设计问题,设计出一个光谱范围1.0~2.5μm、焦距f'=300 mm、相对孔径厂f'/4、视场角6.8°×0.1°的离轴三反望远系统,系统非球面最高次数为4次,总长约为f'/2,对于空间频率30 lp/mm处,调制传递函数值均大于0.8. 相似文献
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随着空间技术的不断发展,高性能、低成本的轻小型空间光学系统成为空间光学领域一个新的研究热点。离轴三反光学系统具有成像质量高、大视场、轻量化程度高等特点,能够更好地适应轻小型、低成本空间光学系统的应用要求,具有广泛的应用前景。以高斯光学和三反消像差理论为基础,设计了一款第三反射镜为自由曲面的离轴三反光学系统,焦距1 550 mm,视场3.60.45,相对孔径1:6.2,自由曲面的加入极大地提高了系统设计自由度和成像质量。设计结果表明,在有效视场内系统成像质量良好,fMTF优于0.43@111 lp/mm,系统最大波像差为0.049 (=632.8 nm),平均波像差RMS值为0.034 ,最大网格畸变0.9%,成像质量相对于子午面完全对称。系统的总长小于f'/3.1,高度小于f'/4.1,且系统的加工和装配公差较为宽松,易于实现。该设计结果对轻小型空间光学系统的设计具有一定的参考价值。 相似文献
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使用光学设计软件设计了一种大视场可见红外一体化反射式光学系统,可见光和红外视场的大小分别为5.2和5.12。在光学系统的轨道高度为675 km的情况下,可对地面目标进行61.3 km和60.36 km的大幅宽观测。在光学系统采用偏视场设计将可见光和红外光的视场进行分离,可以实现双光路、双波段、双视场同时成像观测,避免了使用分光装置对光能量吸收造成损失,提高了光能利用率。可见光系统选用一个焦距为9 000 mm的三反系统,红外光学系统选用两个三反系统,后置三反系统的入瞳与前置三反系统的出瞳位置重合,系统总焦距为2 025 mm。经过优化,可见光系统的MTF在50 lp/mm达到0.45以上,红外系统的MTF在25 lp/mm达到0.65以上,成像质量均达到衍射极限。 相似文献
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大视场、高分辨力星载高光谱成像仪已成为空间遥感的迫切需求,要求其望远系统在宽视场内具有高空间分辨力。在共轴三反系统的几何光学成像理论基础上,研究了用于高光谱成像仪的大视场离轴三反消像散(TMA)望远系统的设计问题,编制了初始结构计算程序,采用视场离轴方式,设计了一个波段范围0.4~2.5μm、焦距360 mm、相对孔径1:4、线视场11.42°的离轴三反望远系统,其主镜为6次非球面,次镜和三镜为二次曲面,考虑到市售探测器的限制,提出了视场分离的分光方法,在离轴三反系统的焦平面附近加一个刀口反射镜实现视场分离。在奈奎斯特空间频率28 lp/mm处,调制传递函数大于0.75,成像质量接近衍射极限。 相似文献
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与传统折射光学系统相比,离轴反射光学系统具有小体积、轻量化和无色差等特点,因此被广泛应用于望远镜系统和空间观测系统等领域。随着目前自由曲面的广泛应用,首先分析了离轴三反光学系统的初始结构参数确定方法,然后在系统的主反射镜设计中引入Zernike边缘矢高形式的自由曲面,最终设计了一款有效焦距为700 mm,视场角为10°,F/#为4.5,系统总长为597.58 mm的离轴三反光学系统。该系统在71.4 lp/mm处各视场的调制传递函数(MTF)值均大于0.28,畸变均小于0.1%,结果表明,该系统在有效视场内成像质量较好。该系统的设计方法对类似的离轴三反光学系统设计具有一定的参考价值。 相似文献
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大线视场大相对口径红外成像系统的光学设计 总被引:2,自引:0,他引:2
在同轴三反射光学系统基础上,采用视场离轴方式,设计了一个在地球同步轨道上对地观测的空间离轴三反射光学系统.该系统同时具有大线视场和大相对口径的特点,设计结果表明,成像质量达到了衍射极限. 相似文献
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针对传统形式三反光学系统难以实现大视场的缺点,提出了一种基于反摄远结构的三反光学系统,并获得初始结构参数求解方程。在反摄远结构三反光学系统中,将主、次镜组成反转伽利略望远镜结构形式,以便简化三反光学系统初始参数的求解方程,最终通过视场偏置的办法实现无遮拦设计。基于上述方法,采用光学设计软件Code V设计了焦距f=100 mm,F数为5,视场为2020。像质评价结果表明,系统在空间频率为50 lp/mm处的MTF值均大于0.6,像质优良。与其他三反光学系统相比,该系统不仅具有大视场,而且仅使用了两块非球面反射镜,降低了系统成本。 相似文献
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High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET > PDMAT > TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center. 相似文献
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In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal (200) (2d = 0.4027 nm) is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line(w), the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line(x), the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines(y), the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line(z) in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line(q) in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution(λ/△ 2) is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy. 相似文献
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This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors. 相似文献
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YUXiao-hua XIANGYu-qun 《半导体技术》2005,30(2):30-32,37
An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB. 相似文献
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The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO>6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs. 相似文献
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Meihua Shen Wilfred Pau Nicolas Gani Jianping Wen Shashank Deshmukh Thorsten Lill Jian Zhang Hanming Wu Guqing Xing 《半导体技术》2004,29(8)
This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration. 相似文献
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White organic light-emitting devices based on fac tris(2- phenylpyridine) iridium sensitized 5,6,11,12-tetraphenylnap -hthacene 总被引:1,自引:0,他引:1
We have fabricated the white organic light-emitting devices (WOLEDs) based on 4,4' -bis(2,2 -diphenyl vinyl)-1,1' - biphenyl (DPVBi) and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene (rubrene). The device structure is ITO/2T-NATA (20 nm)/NPBX (20 nm)/CBP: x%Ir(ppy)3:0.5% rubrene (8 nm)/NPBX (5 nm)/DPVBi (30 nm)/Alq(30 nm)/LiF(0.5 nm)/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris (2-phenylpyridine) iridium [Ir(ppy)3], acts as a yellow light-emitting layer, and N,N' -bis- (1-naphthyl)- N,N' -diphenyl -1, 1' -biphenyl-4,4' -diamine (NPBX) acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir (PPY)3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V. 相似文献
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Complete approach to automatic identification and subpixel center location for ellipse feature 总被引:1,自引:0,他引:1
XUE Ting WU Bin SUN Mei YE Sheng-hua 《光电子快报》2008,4(1):51-54
To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction. 相似文献
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We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network. 相似文献