继电器控制系统在工业生产中的应用

电气控制技术是以各类电动机为动力的传动装置或者系统为对象,以实现生产技术的精密化、生产设备的信息化、生产过程的自动化及机电控制系统的最佳化的一门技术。在电气控制技术中,其控制系统是主要的组成部分。如今机械的电气控制系统是生产机械中不可缺少的组成部分,它对生产机械能否正确可靠地工作起着决定的作用。本文主要介绍可编程序控制系统电器控制技术的应用。     

电气自动化控制中的PLC的有效应用

电气自动化控制的过程中融入PLC技术对电气自动化发展是非常关键的。借助PLC技术的基本原理,将该技术融入到自动化控制当中,有助于解决控制系统中存在的缺陷,提升机械自动化的水平,为工业的发展和产品质量的提升奠定良好基础。文章结合自身经验和认识,结合PLC技术的基本内容,对PLC在电气自动化中的应用做简要分析。     

浅析基于PLC的数控机床电气控制系统的设计

本文将数控机床的电气控制系统的相关内容开始,继而提出基于PLC的数控机床电气控制系统的设计方法,最后得以结语。     

X62W铣床PLC系统改造

X62W77能铣床是一种高效率的加工机械,在机械加工和机械修理中得到广泛的应用．万能铣床的操作是通过机械手柄N时操作电气与机械,已达到机电紧密配合完成预定的操作．是机械与电气结构联合动作的典型控制,是自动化程度较高的组合机床。继电器接触式控制系统,由于电气控制线路触点多、线路复杂、故障率高、检修周期长,给生产与维护带来诸多不便。将X62W万能铣床电气控制线路改造为可编程控制器控制,既可以提高整个电气控制系统的工作性能．又减少维护、维修的工作量。PLC控制系统无论是硬件还是软件,控制稳定可靠,具有极高的可靠性与灵活性。     

X62W铣床PLC系统改造

X62W万能铣床是一种高效率的加工机械,在机械加工和机械修理中得到广泛的应用,万能铣床的操作是通过机械手柄同时操作电气与机械,已达到机电紧密配合完成预定的操作,是机械与电气结构联合动作的典型控制,是自动化程度较高的组合机床。继电器接触式控制系统,由于电气控制线路触点多、线路复杂、故障率高、检修周期长,给生产与维护带来诸多不便。将X62W万能铣床电气控制线路改造为可编程控制器控制,既可以提高整个电气控制系统的工作性能,又减少维护、维修的工作量。PLC控制系统无论是硬件还是软件,控制稳定可靠,具有极高的可靠性与灵活性。     

蒸铝加热线圈自动绕制机的研制

详细介绍了自动绕制钨丝线圈专用设备的研制过程及其机械结构、系统功能、工艺流程、电气控制系统和软件设计等关键技术     

车床电气常见故障分析与处理

电力拖动控制系统是由各种电气元件组成的,使用 最广泛和最基本的控制电器是由各种有触点的电器, 如接触器、按钮等。虽然现代电力拖动控制系统应用了 单片机、PLC,但继电器——接触控制仍不失为一种基 本的控制方法。 车床是由机械和电气两大部分组成,其任一部分     

新型硅芯晶体炉的开发与设计

从分析硅芯晶体生长的工艺特点出发,简要介绍了硅芯晶体生长设备的设计思想以及新近开发设计的新型硅芯晶体炉的机械结构及电气控制系统。     

高职《普通机床电气控制系统装调与维修》课程整体设计

根据机电一体化专业的岗位要求，结合《普通机床电气控制系统装调与维修》课程的培养目标，以实际工作过程为导向，按照任务驱动，完成了本课程的整体教学设计。     

C616车床微电脑控制系统的应用

本文从机械与电气两方面,分析了微电脑系统控制柜具体应用于车床方面的问题。文中对车床纵向与横向驱动扭矩进行了估算;以及变速器的设计计算,并对车床机械上的改动作了介绍。在控制机柜与机床的联调中,文中具体介绍了电气系统的基本控制原理、结构、MCS软件功能以及电气上的改进。为方便整机操作,重新设计了方向控制系统。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.