分数低阶α稳定分布噪声下HB加权自适应时间延迟估计新方法

针对LMS-HB自适应时间延迟估计方法在分数低阶α稳定分布噪声环境下的退化现象,依据分数低阶统计量理论,提出了基于分散系数最小化的LMP-HB自适应时延估计方法,并进一步提出了不依赖于参数估计的基于非线性变换的HB加权自适应时延估计方法。理论分析和计算机仿真结果表明,新方法在高斯和分数低阶α稳定分布噪声环境下具有良好的韧性。     

基于分数低阶矩的LETDE时延估计算法

依据α稳定分布噪声模型,提出了一种新的时延估计方法——基于分数低阶矩的ETDE(explicit time delay estimation)方法,简称为LETDE(low-order explicit time delay estimation)。该方法以估计误差的p阶矩作为优化准则,有效地抑制了非高斯噪声对估计值的影响。理论分析和计算机仿真实验都表明其具有良好的韧性,同时适用于高斯噪声和α稳定分布脉冲噪声下的时延估计。     

基于分数低阶矩的非整数时间延迟估计方法

依据信号的噪声特性和分数低阶矩理论,提出一种基于最小平均p范数的非整数时间延迟估计方法(称为LMPFTDE算法)。该算法是对直接估计非整数采样间隔的时间延迟估计算法(ETDGE)的广义化,运用最小分散系数准则,通过使误差的p阶矩最小得到非整数时间延迟估计值。理论分析和计算机仿真结果都表明该方法不仅可以在高斯噪声环境下工作,而且在脉冲噪声下也具有良好的健壮性。     

脉冲噪声环境下基于分数低阶循环相关的MUSIC算法

该文以稳定分布作为噪声模型,研究了脉冲噪声环境下循环平稳信号的波达方向估计问题。针对在脉冲噪声环境中基于传统2阶循环相关的算法效果显著退化的问题,该文提出了基于分数低阶循环相关的分数低阶循环MUSIC算法(FLOCC-MUSIC)。将分数低阶循环相关与MUSIC算法相结合,可以有效抑制脉冲噪声的同频带干扰。计算机仿真表明了此算法可有效完成高斯噪声和脉冲噪声条件下的波达方向估计,其性能优于传统的基于2阶循环相关的Cyclic-MUSIC。     

脉冲噪声下基于FLO-WHT的雷达回波LMFS检测

线性调频信号(LMFS)是雷达回波信号的一种常见形式,Wigner-Hough变换(WHT)常用于LMFS的检测。复杂环境下雷达回波中的尖峰脉冲噪声服从α稳定分布,在这种噪声环境下WHT性能退化。基于此提出了能工作在稳定分布噪声环境下的分数低阶伪Wigner-Ville时频分布方法(FLO-PWVD),结合已有的Hough变换,提出了分数低阶伪Wigner-Hough变换(FLO-PWHT)新方法。在脉冲噪声环境下,应用FLO-PWHT对多个LMFS信号进行检测,计算机仿真结果表明,提出的FLO-PWHT算法性能明显优于已有的PWHT方法,能较好地在脉冲噪声环境下工作,且具有一定的韧性。     

分数低阶循环统计量及其在脉冲噪声环境下时延估计中的应用

本文以α稳定分布作为噪声模型,研究了非高斯噪声对传统的二阶循环统计量的影响,提出了分数低阶循环统计量的概念,研究并证明了其性质。在此基础上提出基于分数低阶循环统计量的新的时延估计方法—RCCC(Robust Corre- lated Cyclic Covariation)。计算机模拟表明,这种算法是一种在高斯和α稳定分布噪声条件下具有良好韧性的时延估计方法。     

一种基于非线性变换的EP潜伏期变化自适应检测方法

该文依据分数低阶矩理论和诱发电位（EP）信号及噪声的低阶α稳定分布特性，提出了一种自适应检测EP潜伏期变化的新方法。这种方法基于sigmoid函数对误差信号en(k)进行连续的非线性变换，即抑制了EP信号中的低阶α稳定分布噪声，又有效保留了信号成分，在高斯和低阶α稳定分布噪声条件下具有很好的韧性，且无须动态估计信号噪声的α参数。利用这种方法动态检测EP潜伏期的变化，比以往的DLMS，DLMP和SDA等算法具有较高的估计精度和较快的收敛速度，是一种具有较高韧性的性能优良的EP潜伏期变化动态检测方法。     

脉冲噪声环境下单基地MIMO雷达目标角度估计算法

以α稳定分布作为脉冲噪声数学模型,研究了脉冲噪声环境下单基础多输入多输出(MIMO)雷达目标角度估计问题。为了解决基于分数低阶统计量的目标角度估计算法需要脉冲噪声先验信息的问题,利用雷达接收数据构造出两种鲁棒的相关矩阵,即相关熵相关矩阵和非线性压缩核函数相关矩阵,提出了基于这两种鲁棒相关矩阵的单基地MIMO雷达目标角度估计算法。仿真实验表明:在α稳定分布脉冲噪声环境下,新提出的责任中算法的性能明显优于传统的基于二阶统计量和基于分数低阶统计量的目标角度估计算法。     

脉冲噪声环境下基于分数低阶循环相关的自适应时延估计方法

以α稳定分布作为噪声模型,研究了非高斯噪声对传统的二阶循环统计量的影响,提出了分数低阶循环相关的概念,研究并证明了其性质,对传统意义上的二阶循环统计量进行了广义化,并在此基础上结合自适应技术提出了一种基于分数低阶循环相关的自适应时延估计方法。计算机模拟表明,该方法可有效估计高斯噪声和脉冲噪声条件下的时变和非时变时延值,其性能不仅优于基于二阶循环相关的自适应时延估计算法,而且优于最小平均p范数(LMP)自适应时延估计方法。     

Alpha稳定分布下基于RHMy滤波的MQAM信号码元速率估计方法

针对Alpha稳定分布噪声环境下,传统的MQAM信号码元速率估计方法性能恶化甚至完全失效的问题,本文结合了改进的Myriad类滤波与小波变换法的优点,提出一种基于递归混合Myriad滤波(Recursive Hybrid Myriad filter, RHMy)的高阶消失矩二次小波变换法对MQAM信号进行码元速率估计。首先采用RHMy滤波充分抑制噪声中的脉冲成分,再采用高阶消失矩小波估计码元速率。仿真结果表明,在Alpha稳定分布噪声环境中,相比于多尺度Haar小波变换法、分数低阶循环谱法与基于加权Myriad滤波(Weighted Myriad filter, WMy)的小波变换法,该方法有效的提高了低广义信噪比下的估计精度,同时在不同的脉冲噪声条件下具有较好的鲁棒性。      

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.